Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: Disclosed is a method of manufacturing a capacitor having a high dielectric constant, which prevents a surface of a dielectric layer from being deteriorated due to a vacuum break and prevents the quality of a dielectric layer from being degraded due to a physical stress occurring when a semiconductor substrate is being loaded and unloaded.

Abstract: Disclosed are an apparatus and method for processing a substrate. The apparatus includes a chamber, a susceptor disposed in a lower portion of the chamber, a chamber lid disposed on the susceptor, a first source gas distributor installed in the chamber lid to distribute a source gas, a second source gas distributor installed in the chamber lid to distribute a source gas, and a first purge gas distributor installed in the chamber lid to distribute a purge gas. At least one substrate is disposed on the susceptor, and the first purge gas distributor is installed between the first and second source gas distributors.

Abstract: Disclosed is a substrate processing apparatus which is capable of improving uniformity of thin film to be deposited onto a substrate, and also freely adjusting productivity, wherein the substrate processing apparatus may include a process chamber for providing a process space; a substrate supporter, which is rotatably provided in the process space, for supporting at least one substrate; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributing part for spatially separating the process space into first and second reaction spaces, and inducing the different kinds of deposition reactions in the respective first and second reaction spaces, wherein the gas distributing part is provided in the chamber lid.

Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: Disclosed is an apparatus and method for processing substrate, which facilitates to prevent a substrate form being damaged, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting with the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributing part provided in the chamber lid, wherein the gas distributing part distributes source gas to a source gas distribution area on the substrate supporter, distributes reactant gas to a reactant gas distribution area which is separated from the source gas distribution area, and distributes purge gas to a space between the source gas distribution area and the reactant gas distribution area.

Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H2O and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.

Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H20 and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.