Patents by Inventor Jae-Goo Lee

Jae-Goo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10770749
    Abstract: Provided is an electrolyte additive including a salt of an anion represented by Chemical Formula 1 below, with Cs+ or Rb+: wherein A is O or S, and R1 and R2 are each independently a C1-C10 alkyl group in which all or some of the hydrogen atoms are substituted with halogen atoms.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: September 8, 2020
    Inventors: Jae Yoon Kim, Min Goo Kim, Jong Hyun Lee, Ji Seong Han
  • Publication number: 20200189978
    Abstract: A refractory article is described, the refractory article including a refractory body and a refractory coating layer deposited on a surface thereof, wherein the refractory coating layer includes silica, alumina, boron oxide, and calcium oxide. The refractory article may be at least one of a melting vessel, a clarifying vessel and a molding apparatus. A composition for coating a refractory article and a method of manufacturing the refractory article are also disclosed.
    Type: Application
    Filed: May 14, 2018
    Publication date: June 18, 2020
    Inventors: Myeong-jin Cho, Hong-goo Choi, Jae-ho Lee, Yong-won Lee
  • Patent number: 10573951
    Abstract: A split resonator and a printed circuit board (PCB) including the same are disclosed. The split resonator is mounted to one side of the PCB to improve the electromagnetic shielding effect, and absorbs a radiation field emitted to the outer wall of the PCB. The PCB includes: a substrate on which one or more electronic components are populated; a dielectric substrate mounted to one side of the substrate; one pair of conductors provided in the dielectric substrate, spaced apart from the substrate in a thickness direction of the substrate by a predetermined distance, and arranged to face each other; and a connection portion configured to interconnect the one pair of conductors, and arranged in parallel to the thickness direction of the substrate.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: February 25, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soon Yong Lee, Yeon Sik Yu, Il Kim, Keon Young Seo, Min-Goo Seo, Jae-Deok Lim, Si Ho Jang, Hyun-Tae Jang
  • Patent number: 10573836
    Abstract: An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: February 25, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jae-Goo Lee, Young-Mo Koo, Min-Woo Lee, Woo-Sik Jeon
  • Publication number: 20200025366
    Abstract: Disclosed herein are a fluid sand falling type circulating fluidized bed boiler with a plurality of risers for preventing erosion and corrosion of water tubes and increasing combustion efficiency, and a method of operating the same. The fluid sand falling type circulating fluidized bed boiler with a plurality of risers includes a boiler section into which fuel and oxidizer are injected, a riser section connected to the boiler section so that the fuel and fluid sand supplied from the boiler section are introduced from the bottom of the riser section and flow up, and a relay section provided on the boiler section to supply the fluid sand having passed through the riser section to the boiler section, wherein the fuel is injected from the top of the boiler section and burned while flowing down therein.
    Type: Application
    Filed: May 2, 2019
    Publication date: January 23, 2020
    Applicants: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, KOREA INSTITUTE OF ENERGY RESEARCH, KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Uen Do LEE, Byeong Ryeol BANG, Young Doo KIM, Soo Hwa JEONG, Chang Won YANG, Jae Goo LEE, Tae Young MUN, Myung Won SEO, Ji Hong MOON, Hyun Seol PARK, Joon Mok SHIM, Young Cheol PARK, Do Won SHUN, Jong Ho MOON, Dal Hee BAE, Sung Ho JO, Yun Tae HWANG, Sang In KEEL, Jin Han YUN, ChungKyu LEE, Pil Woo HEO
  • Publication number: 20200026025
    Abstract: Provided is an optical device including an optics including at least two moving groups that are movable along an optical axis and share portions of driving regions; a plurality of actuators configured to move the at least two moving groups along the optical axis, respectively; and a control unit configured to control the positions of the at least two moving groups by operating the actuators, wherein the control unit moves the at least two moving groups independently, such that the position coordinates of the at least two moving groups in one integrated coordinates system do not coincide with each other.
    Type: Application
    Filed: June 28, 2017
    Publication date: January 23, 2020
    Applicant: HANWHA TECHWIN CO., LTD.
    Inventors: Dae Bong KIM, Young Sang KWON, Jae Goo LEE, Young Mi KIM, Hee Joong HAN
  • Patent number: 10373542
    Abstract: In order to display an image in a display device, in which a plurality of sub pixels within a unit pixel receives driving power from one driving power line, a driving voltage stability weak pattern is detected by analyzing image data. When the input image is determined as the driving voltage stability weak pattern, a white balance correction gain of each sub pixel is decreased while a ratio among the white balance correction gains of the sub pixels is maintained. Target luminance for displaying the input image is changed. A voltage level of the driving power is change in accordance with the changed target luminance.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: August 6, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hae Goo Jung, Jae Woo Song, Jae Hoon Lee
  • Patent number: 10339864
    Abstract: A method of digital-driving an organic light emitting display device includes analyzing a light emission pattern of the input image data and converting a third grayscale of the input image data into a first converted grayscale and a second converted grayscale based on an analysis result of the light emission pattern of the input image data.
    Type: Grant
    Filed: January 23, 2016
    Date of Patent: July 2, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae-Woo Song, Hae-Goo Jung, Seung-Ho Park, Jae-Hoon Lee, Mi-Young Joo
  • Publication number: 20190192591
    Abstract: Provided is a novel Lactobacillus acidophilus YTI strain (deposition number: KCCM 11808P); and a composition for preventing, alleviating, or treating menopause, comprising, as an active ingredient, Lactobacillus acidophilus comprising the novel strain.
    Type: Application
    Filed: August 11, 2017
    Publication date: June 27, 2019
    Applicant: KOREA FOOD RESEARCH INSTITUTE
    Inventors: Young-Do NAM, Yun-Tai KIM, Hee Soon SHIN, So-Young LEE, Jae-Goo KIM, Eun-Yeong LIM, Eun-Ji SONG
  • Patent number: 10199389
    Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a channel structure that is located on a substrate and extends perpendicularly to the substrate, a conductive pattern that extends perpendicularly to the substrate and is spaced apart from the channel structure, an electrode structure that is located between the channel structure and the conductive pattern, and comprises a plurality of gate patterns and a plurality of insulation patterns that are alternately laminated. An insulating layer that contacts with a top surface of the conductive pattern is formed along side surfaces of the electrode structure. The top surface of the conductive pattern is formed to be lower than the top surface of the channel structure.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: February 5, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-Won Kim, Chang-Seok Kang, Young-Woo Park, Jae-Goo Lee, Jae-Duk Lee
  • Patent number: 10106424
    Abstract: A method of preparing silicon using silica includes placing silica in a reaction chamber; adding a reducing agent into the reaction chamber; feeding a material for impact into the reaction chamber and sealing the reaction chamber; and reducing the silica to silicon by allowing the material for impact to generate a physical impact inside the reaction chamber. The preparation method of silicon using silica does not employ a high-temperature high-pressure process and provides a preparation method of silicon by which the porous structure of the silica before a reduction reaction is maintained within the silicon even after the reaction.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: October 23, 2018
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Won Chul Cho, Myung Won Seo, Hai In Lee, Jae Goo Lee, Ho Won Ra, Sang Jun Yoon, Tae Young Mun
  • Publication number: 20180179071
    Abstract: A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.
    Type: Application
    Filed: December 27, 2017
    Publication date: June 28, 2018
    Inventors: Won Chul Cho, Myung Won Seo, Hae In Lee, Jae Goo Lee, Ki Kwang Bae, Chang Hee Kim, Jong Won Kim, Chu Sik Park, Kyoung-Soo Kang, Seong Uk Jeong, Hyun Seok Cho
  • Publication number: 20180159061
    Abstract: An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.
    Type: Application
    Filed: January 8, 2018
    Publication date: June 7, 2018
    Inventors: Jae-Goo Lee, Young-Mo Koo, Min-Woo Lee, Woo-Sik Jeon
  • Patent number: 9899412
    Abstract: A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: February 20, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-goo Lee, Young-woo Park, Jin-taek Park
  • Patent number: 9893074
    Abstract: A semiconductor device including a substrate, channels, a gate stack, and a pad separating region. The substrate has a pad region adjacent to a cell region. The channels extend in a direction crossing an upper surface of the substrate in the cell region. The gate stack includes a plurality of gate electrode layers spaced apart from each other on the substrate and enclosing the channels in the cell region. The pad separating region separates the gate stack into two or more regions in the pad region. The gate electrode layers have different lengths in the pad region.
    Type: Grant
    Filed: March 19, 2015
    Date of Patent: February 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Goo Lee, Young Woo Park
  • Patent number: 9865833
    Abstract: An organic light-emitting device having a resonance structure includes a substrate; a first electrode and a second electrode on the substrate and facing each other; an emission layer between the first electrode and the second electrode; a first hole transport layer between the first electrode and the emission layer; and a second hole transport layer between the first hole transport layer and the emission layer. An electron mobility of the second hole transport layer is 5 times to 100 times greater than an electron mobility of the first hole transport layer, and a thickness of the second hole transport layer corresponds to a resonance distance of a wavelength of emission light of the emission layer.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: January 9, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jae-Goo Lee, Young-Mo Koo, Min-Woo Lee, Woo-Sik Jeon
  • Patent number: 9748261
    Abstract: A method of fabricating a memory device includes alternately stacking a plurality of insulating layers and a plurality of sacrificial layers on a substrate, forming a channel hole by etching the insulating layers and the sacrificial layers to expose a partial region of the substrate, forming a channel structure in the channel hole, forming an opening by etching the insulating layers and the sacrificial layers to exposed a portion of the substrate, forming a plurality of side openings that include first side openings and a second side opening by removing the sacrificial layers through the opening, forming gate electrodes to fill the first side openings, and forming a blocking layer to fill the second side opening.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: August 29, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-goo Lee, Young-woo Park
  • Publication number: 20170229476
    Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a channel structure that is located on a substrate and extends perpendicularly to the substrate, a conductive pattern that extends perpendicularly to the substrate and is spaced apart from the channel structure, an electrode structure that is located between the channel structure and the conductive pattern, and comprises a plurality of gate patterns and a plurality of insulation patterns that are alternately laminated. An insulating layer that contacts with a top surface of the conductive pattern is formed along side surfaces of the electrode structure. The top surface of the conductive pattern is formed to be lower than the top surface of the channel structure.
    Type: Application
    Filed: April 12, 2017
    Publication date: August 10, 2017
    Inventors: Jong-Won KIM, Chang-Seok KANG, Young-Woo PARK, Jae-Goo LEE, Jae-Duk LEE
  • Publication number: 20170194347
    Abstract: A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.
    Type: Application
    Filed: March 21, 2017
    Publication date: July 6, 2017
    Inventors: Jae-goo Lee, Young-woo Park, Jin-taek Park
  • Publication number: 20170137295
    Abstract: A method of preparing silicon using silica includes placing silica in a reaction chamber; adding a reducing agent into the reaction chamber; feeding a material for impact into the reaction chamber and sealing the reaction chamber; and reducing the silica to silicon by allowing the material for impact to generate a physical impact inside the reaction chamber. The preparation method of silicon using silica does not employ a high-temperature high-pressure process and provides a preparation method of silicon by which the porous structure of the silica before a reduction reaction is maintained within the silicon even after the reaction.
    Type: Application
    Filed: July 1, 2016
    Publication date: May 18, 2017
    Inventors: Won Chul CHO, Myung Won SEO, Hai In LEE, Jae Goo LEE, Ho Won RA, Sang Jun YOON, Tae Young MUN