Patents by Inventor Jae-heon Choi

Jae-heon Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240097119
    Abstract: A method of manufacturing a composite electrode for an all-solid-state battery includes: preparing a precursor solution by mixing at least one solid electrolyte precursor and at least one polar solvent; stirring the precursor solution; preparing an electrode slurry by adding an active material to the stirred precursor solution; and heat-treating the electrode slurry and obtaining the composite electrode for the all-solid-state battery, wherein the composite electrode for the all-solid-state battery includes: the active material; and a coating layer disposed on the active material and including a solid electrolyte.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Applicants: HYUNDAI MOTOR COMPANY, Kia Corporation
    Inventors: Sun Ho CHOI, Yong Jun JANG, In Woo SONG, Sang Heon LEE, Sang Soo LEE, So Young KIM, Seong Hyeon CHOI, Sa Heum KIM, Jae Min LIM
  • Publication number: 20240079413
    Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 7, 2024
    Inventors: Himchan OH, Jong-Heon YANG, Ji Hun CHOI, Seung Youl KANG, Yong Hae KIM, Jeho NA, Jaehyun MOON, Chan Woo PARK, Sung Haeng CHO, Jae-Eun PI, Chi-Sun HWANG
  • Publication number: 20200241137
    Abstract: The present disclosure provides a hypertube system for detecting a position of a hypertube vehicle, including a hypertube vehicle, a tube configured to surround a travel path of the hypertube vehicle, At least one LiDAR sensor each mounted on an inner wall of the tube and including a laser transmitter configured to irradiate a laser beam toward the hypertube vehicle and a laser receiver configured to detect a laser, and a reflector configured to reflect the laser irradiated from the LiDAR sensor, wherein the reflector may be disposed in the hypertube vehicle, and wherein the laser beam reflected from the reflector reaches the laser receiver of the LiDAR sensor to be used in detecting the position of the hypertube vehicle.
    Type: Application
    Filed: December 10, 2018
    Publication date: July 30, 2020
    Applicant: Korea Railroad Research Institute
    Inventors: SuYong CHOI, Jae Heon CHOI, Jung Youl LIM, Chang Young LEE, Kwan Sup LEE, Yong Jun JANG, Jeong Min JO, Jin Ho LEE, Min Hwan OK, Jae Hoon KIM, Lee Hyeon KIM
  • Patent number: 6686259
    Abstract: In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: February 3, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-sik Park, Mikio Takagi, Jae-heon Choi, Sang-il Jung, Jun-taek Lee
  • Publication number: 20020127762
    Abstract: In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.
    Type: Application
    Filed: November 27, 2001
    Publication date: September 12, 2002
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang-sik Park, Mikio Takagi, Jae-heon Choi, Sang-il Jung, Jun-taek Lee