Abstract: An electron emission display includes: an electron emission substrate having at least one electron emission device formed thereon, an image forming substrate, and at least two spacers for supporting the electron emission substrate and the image forming substrate to be spaced apart from each other. Areas of the spacers per unit area are increased in at least one direction from a central region to a periphery region. The areas can be increased by, for example, increasing a cross-sectional area of each spacer or increasing the number of spacers. In another embodiment, heights of the spacers are decreased in at least one direction from the center region to the periphery region.

Abstract: A storage medium which stores catalog information and a catalog information recording and/or playback apparatus and method therefor. Using the method, catalog information including a still picture and additional information together with audio data are recorded on a storage medium such as a digital versatile disk (DVD), which is an optical record storage medium, and the catalog information is played back during playback of the audio data, to thereby provide various information on the audio data. Also, the apparatus includes a buffer memory for catalog playback which maintains a predetermined standard and compatibility, and is capable of real-time reading during playback of the audio data, and automatically plays back the catalog content, corresponding to the playback state of the audio data, when there is no additional selection of a user.

Abstract: A method and apparatus for controlling power of a transmitter in a mesh network. A controller, if it sets a reference power to one of a first measured transmission power and a maximum power, compares the reference power with a first power in level, and compares the first power with a second power in level. A cumulation factor calculator calculates a cumulation factor by comparing the first power with the second power. A reference power setter sets the reference power according to a scope to which a value obtained by adding a reference power to a sum of the calculated cumulation factors belongs. A power controller controls transmission power according to the set reference power.

Abstract: Semiconductor integrated circuits that include thin film transistors (TFTs) and methods of fabricating such semiconductor integrated circuits are provided. The semiconductor integrated circuits may include a bulk transistor formed at a semiconductor substrate and a first interlayer insulating layer on the bulk transistor. A lower TFT may be on the first interlayer insulating layer, and a second interlayer insulating layer may be on the lower TFT. An upper TFT may be on the second interlayer insulating layer, and a third interlayer insulating layer may be on the upper TFT. A first impurity region of the bulk transistor, a first impurity region of the lower TFT, and a first impurity region of the upper TFT may be electrically connected to one another through a node plug that penetrates the first, second and third interlayer insulating layers.

Abstract: The present invention relates to an organic light emitting display, and an aspect of the invention is to minimize the phenomenon of reduction in luminance of the organic light emitting diode display, by dividing an analog data to a positive data and a negative data, applying the same data with different polarities to the control electrode of a driving transistor, and preventing the deterioration of threshold voltage of the driving transistor.

Abstract: A system-on-chip (SoC) test apparatus is disclosed. The system-on-chip (SoC) testing apparatus reduces a test time due to a small amount of overhead in the case of testing an AMBA-based system-on-chip (SoC) using a TIC, an EBI, and a Test Harness, and maintains AMBA- or TIC- compatibility simultaneously while performing scan input/output operations.

Abstract: A phase locked loop (PLL) having an improved phase unlock detection function generates a clock pulse signal at a frequency from a synchronization signal of a cathode ray tube (CRT) monitor and includes a phase frequency detector (PFD), a charge pump, a loop filter, a Voltage Controlled Oscillator (VCO), a divider, a phase unlock detection circuit, a phase lock/unlock detection circuit, and an output circuit. The phase unlock detection circuit detects an initial generation of a phase unlock from the up or down signal, outputs a first detection signal, and outputs an internal control signal according to the up or down signal. The phase lock/unlock detection circuit outputs a second detection signal, in response to the internal control signal and the first detection signal. The output circuit performs a logic operation on the first detection signal and the second detection signal and outputs a third detection signal.

Abstract: Disclosed is a wavelength-division-multiplexed passive optical network using a wavelength-locked optical transmitter.

Abstract: A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.

Abstract: Methods of fabricating semiconductor devices are provided. An interlayer insulating layer is provided on a single crystalline semiconductor substrate. A single crystalline semiconductor plug is provided that extends through the interlayer insulating layer and a molding layer pattern is provided on the semiconductor substrate and the single crystalline semiconductor plug. The molding layer pattern defines an opening therein that at least partially exposes a portion of the single crystalline semiconductor plug. A single crystalline semiconductor epitaxial pattern is provided on the exposed portion of single crystalline semiconductor plug using a selective epitaxial growth technique that uses the exposed portion of the single crystalline semiconductor plug as a seed layer. A single crystalline semiconductor region is provided in the opening. The single crystalline semiconductor region includes at least a portion of the single crystalline semiconductor epitaxial pattern.

Abstract: A flat panel display apparatus includes a main plate, an organic light emitting element, a protecting layer and an attachable-detachable layer. The organic light emitting element includes a first electrode, a second electrode corresponding to the first electrode, and an organic light emitting layer disposed between the first and second electrodes to generate a light based on a current that flows between the first and second electrodes through the organic light emitting layer. The organic light emitting element is on the main plate. The protecting layer is on the organic light emitting element to protect the organic light emitting element. The attachable-detachable layer is on the protecting layer. Therefore, an image display quality is improved, and a manufacturing cost is decreased.

Abstract: A cassette tape ejecting apparatus has a chassis having a pin boss, a hook hole and a locking groove formed as a single body, a cassette housing installed on the chassis to be transferred to a tape insertion position and a tape ejection position, a cassette tape being mounted thereon, a locking lever being installed on the cassette housing, and having a locking protrusion hooked on the looking groove of the chassis when the cassette housing is transferred to the tape insertion position, an eject lever installed on the chassis to be rotated through the pin boss of the chassis in the forward/backward direction unlocks the locking protrusion from the locking groove of the chassis to eject the cassette tape, and a cassette switch turned on/off by the forward/backward rotation of the eject lever, for detecting ejection of the cassette tape.

Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Abstract: A method and system for eliminating inefficiency caused by active-sleep mode switching in power saving through a sleep mode in a wireless mesh network are provided. The sleep mode is controlled using a virtual Transmission Opportunity (vTXOP) according to TXOP information of a one-hop neighbor node. The sleep mode control takes into account a wireless mesh network environment and leads to power saving.

Abstract: A display device includes; a thin film transistor formed on a insulating substrate, a pixel electrode electrically connected to the thin film transistor, an organic layer formed on the pixel electrode, a wall surrounding the organic layer, a reflective film formed on the wall, and a common electrode formed on the organic layer.

Abstract: The present invention relates to a semiconductor light emitting diode.

Abstract: Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based semiconductor device comprises a semi-insulating GaN layer formed on a substrate, a plurality of electrodes for a SAW filter formed on one side of the semi-insulating GaN layer, an Al-doped GaN layer formed on the other side of the semi-insulating GaN layer, an AlGaN layer formed on the Al-doped GaN layer, and a plurality of electrodes for an HFET formed on the AlGaN layer. Both sides of the semi-insulating GaN layer have the same surface level.

Abstract: A micro-lens built-in vertical cavity surface emitting laser (VCSEL) includes a substrate and a lower reflector formed on the substrate. An active layer is formed on the lower reflector, generating light by a recombination of electrons and holes. An upper reflector is formed on the active layer including a lower reflectivity than that of the lower reflector. A micro-lens is disposed in a window region through which the laser beam is emitted. A lens layer is formed on the upper reflector with a transparent material transmitting a laser beam; the lens layer includes the micro-lens. An upper electrode is formed above the upper reflector excluding the window region a lower electrode formed underneath the substrate.

Abstract: A single wavelength bi-directional RoF link apparatus for signal transmission in a TDD wireless system includes a main donor for receiving an RF signal of downstream data from an upper layer, electrooptic converting the received RF signal to an optical signal, and transmitting the converted optical signal via an optical fiber in response to a TDD switching signal received from the upper layer, or receiving an optical signal of upstream data via the optical fiber, opto-electric converting the received optical signal to an RF signal in response to the TDD switching signal received from the upper layer, and transmitting the converted optical signal to the main donor; and a remote for receiving the optical signal of the downstream data via the optical fiber from the main donor, opto-electric converting the received optical signal to an RF signal, and emitting the converted RF signal to a terminal via an antenna in response to a TDD switching signal generated by a switch timing signal generation circuit, or receiv