Patents by Inventor Jae-hyoung Choi

Jae-hyoung Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10636795
    Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: April 28, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
  • Publication number: 20200083593
    Abstract: An antenna module includes: a board having a first surface including a ground region and a feed region; and chip antennas mounted on the first surface, each of the chip antennas including a first antenna and a second antenna. The first antenna and the second antenna each include a ground portion bonded to the ground region, and a radiation portion bonded to the feed region. A length of a radiating surface of the first antenna is greater than a mounting height of the first antenna, and a mounting height of the second antenna is greater than a length of a radiating surface of the second antenna. A horizontal spacing distance between the radiation portion of the first antenna and the ground region is greater than a horizontal spacing distance between the radiation portion of the second antenna and the ground region.
    Type: Application
    Filed: June 28, 2019
    Publication date: March 12, 2020
    Applicant: Samsung Electro-Mechanics.,Co., Ltd.
    Inventors: Seong Hee CHOI, Sang Jong LEE, Sung Yong AN, Jae Yeong KIM, Ju Hyoung PARK
  • Publication number: 20190394383
    Abstract: An electronic device according to various embodiments comprises a camera module, a communication module, and a processor electrically connected to the camera module and the communication module, wherein the processor acquires an exposure value for an image inputted using the camera module, acquires lighting control-related information from at least one lighting device on the basis of a network connected using the communication module, and can generate a signal for adjusting at least one piece of the lighting control-related information of the at least one lighting device on the basis of the exposure value and a preset lighting control-related information set value. In addition, other embodiments are possible.
    Type: Application
    Filed: November 23, 2017
    Publication date: December 26, 2019
    Inventors: Ji-Young KIM, Na-Youn PARK, Jae-Hyoung PARK, Jung-Su HA, Gyu-Cheol CHOI
  • Patent number: 10486496
    Abstract: A method of controlling an air conditioning system for a vehicle is provided. The method includes detecting a cooling mode while the vehicle is being driven and comparing a vent discharge temperature of air with a cooling target temperature set by a user. When the vent discharge temperature is greater than the cooling target temperature the compressor RPM is determined and air is introduced into the vehicle without passing through the interior heat exchanger and the electric heater. When the vent discharge temperature is less than the cooling target temperature, the compressor RPM is determined and a door in the system is opened to guide the air through the interior heat exchanger to heat the air is heated and then the vent discharge temperature is compared with the cooling target temperature again, and the electric heater is operated.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: November 26, 2019
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Wan Je Cho, Jae Yeon Kim, Kwon Hyoung Choi, Tae Han Kim, Ho Gyu Choi, Su Yeon Kang, Yeon Ho Kim, Myunghwan Kim, Yong Hyun Choi
  • Publication number: 20190267384
    Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
  • Patent number: 10389951
    Abstract: An electronic device includes a lens part that receives light from a subject, an image sensor that receives the light of the lens part from a group of pixels arranged two-dimensionally, and an processor that processes an image signal of the image sensor. The image sensor performs a read-out operation at a speed to prevent blurring of an image. The processor temporarily stores image data by the read-out operation in a memory, loads a plurality of images stored in the memory to generate an image, of which the number of bits is expanded compared with the image signal of the image sensor, and performs gamma processing on the image, of which the number of bits is expanded, to generate an image compressed to the same number of bits as the image signal of the image sensor.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: August 20, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Hyoung Park, Byung Ho Kim, Jae Joon Moon, Jeong Won Lee, Han Sung Kim, Woo Seok Choi, Shuichi Shimokawa, Takafumi Usui
  • Patent number: 10297600
    Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: May 21, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
  • Patent number: 10287947
    Abstract: A selective catalytic reduction system includes a reducing agent injection module installed in an exhaust pipe through which an exhaust gas is discharged from an engine and configured to inject a reducing agent into the exhaust pipe, a temperature calculator configured to calculate a temperature of the reducing agent injection module using temperature-related information of the reducing agent injection module, and a temperature controller configured to control to increase a reducing agent injection amount of the reducing agent injection module when the calculated temperature.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: May 14, 2019
    Assignee: DOOSAN INFRACORE CO., LTD.
    Inventors: Jae-Seong Kim, Eun-Hyoung Kim, Nam-Il Choi, Won-Jun Choi
  • Publication number: 20180240800
    Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.
    Type: Application
    Filed: April 18, 2018
    Publication date: August 23, 2018
    Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
  • Patent number: 9978753
    Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: May 22, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
  • Patent number: 9923047
    Abstract: The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: March 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se Hoon Oh, Seongyul Park, Chin Moo Cho, Yunjung Choi, Gyu-Hee Park, Youn-Joung Cho, Younsoo Kim, Jae Hyoung Choi
  • Patent number: 9893142
    Abstract: A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: February 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se-Hyoung Ahn, Young-Geun Park, Jong-Bom Seo, Jae-Hyoung Choi
  • Publication number: 20170352666
    Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.
    Type: Application
    Filed: January 19, 2017
    Publication date: December 7, 2017
    Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
  • Patent number: 9685450
    Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: June 20, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Yeon Park, Jae-Hyoung Choi, Vladimir Urazaev, Jin-Ha Jeong
  • Patent number: 9685498
    Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: June 20, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Yeol Kang, Suk-Jin Chung, Youn-Soo Kim, Jae-Hyoung Choi, Jae-Soon Lim, Min-Young Park
  • Publication number: 20170145613
    Abstract: The present disclosure provides a door lock device for releasably locking a door of a washing machine. The door lock device has first to third latches, and a drive motor and a latch drive mechanism for moving the third latch. The first latch releasably locks the door of the washing machine and is movable in frontward and rearward directions. The movement of the first latch is changed at a change position. The first latch is always biased frontward by a spring. The second latch releasably locks the first latch, which locks the door of the washing machine, at a door locking position. The third latch is moved in a direction perpendicular to the movement direction of the first latch. The third latch restricts the first latch at the door locking position, or unlocks the first latch after pushing the first latch from the door locking position against the spring.
    Type: Application
    Filed: November 21, 2016
    Publication date: May 25, 2017
    Applicant: SCD CO., LTD.
    Inventor: Jae Hyoung CHOI
  • Publication number: 20170018604
    Abstract: A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.
    Type: Application
    Filed: March 29, 2016
    Publication date: January 19, 2017
    Inventors: Se-Hyoung AHN, Young-Geun PARK, Jong-Bom SEO, Jae-Hyoung CHOI
  • Publication number: 20160315137
    Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.
    Type: Application
    Filed: July 5, 2016
    Publication date: October 27, 2016
    Inventors: SANG-YEOL KANG, SUK-JIN CHUNG, YOUN-SOO KIM, JAE-HYOUNG CHOI, JAE-SOON LIM, MIN-YOUNG PARK
  • Patent number: 9412583
    Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: August 9, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Yeol Kang, Suk-Jin Chung, Youn-Soo Kim, Jae-Hyoung Choi, Jae-Soon Lim, Min-Young Park
  • Patent number: D858171
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: September 3, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Jun Kim, Tae-Hyoung Cho, Ji-Chang Kang, Hye-Jin Yang, Jong-Su Jeon, Hwan-Woong Choi