Abstract: Disclosed is a display device capable of being manufactured through a simplified process and having improved touch sensitivity. The display device includes an encapsulation unit disposed on a light-emitting element, a touch sensor disposed on the encapsulation unit, and an intermediate layer disposed between the encapsulation unit and the touch sensor. The intermediate layer includes a first intermediate layer, having a dielectric constant that is lower than a dielectric constant of an organic film disposed above or under the intermediate layer, and a second intermediate layer, having greater hardness than the first intermediate layer, whereby touch sensitivity is improved while processing is simplified.

Abstract: A pixel of an image sensor is provided to include a control region and a detection region. The control region is configured to generate hole current in a substrate, and a detection region is configured to capture electrons generated by incident light and moved by the hole current. A depth of an outer detection region of the detection region is deeper than a depth of an inner detection region of the detection region.

Abstract: A display device prevents cracks from spreading to an active area. The display device includes a substrate including an active area and a non-active area having a bending area, a thin-film transistor disposed in the active area, a light-emitting element disposed in the active area and connected to the thin-film transistor, an encapsulation layer disposed on the light-emitting element, a touch sensor disposed on the encapsulation layer, a touch pad disposed in the non-active area, a first routing line connecting the touch sensor to the touch pad via a second routing line in the bending area, and a crack prevention layer disposed on the second routing line in the bending area. Thus, the crack prevention layer is capable of preventing the occurrence of cracks in the bending area BA, thus preventing cracks from spreading to the active area AA.

Abstract: Disclosed is a display device capable of being manufactured through a simplified process and having improved touch sensitivity. The display device includes an encapsulation unit disposed on a light-emitting element, a touch sensor disposed on the encapsulation unit, and an intermediate layer disposed between the encapsulation unit and the touch sensor. The intermediate layer includes a first intermediate layer, having a dielectric constant that is lower than a dielectric constant of an organic film disposed above or under the intermediate layer, and a second intermediate layer, having greater hardness than the first intermediate layer, whereby touch sensitivity is improved while processing is simplified.

Abstract: A nonvolatile memory device having multi-level resistance and capacitance values is provided. Such a nonvolatile memory device includes: a substrate; a first electrode that is provided on the substrate; a dielectric layer that is provided on the first electrode, has resistance and capacitance changed by a tunneling conduction phenomenon of charges according to an applied voltage, has rectifying characteristics, and includes a dielectric material; an active layer that is provided on the dielectric layer, has resistance and capacitance changed according to an applied voltage, and includes a graphene oxide complex; and a second electrode that is provided on the active layer. In addition, the nonvolatile memory device has multi-level resistance and capacitance values according to an applied voltage.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

Abstract: Disclosed is a display device having a reduced non-display area. The display device includes an organic cover layer disposed on an encapsulation unit, an inner dam disposed between a substrate hole and a plurality of light-emitting elements, and a blocking element disposed between the substrate hole and the inner dam, the blocking element being disposed under the organic cover layer, whereby it is possible to prevent damage to a light-emitting stack. In addition, since the substrate hole is disposed in an active area, it is possible to reduce the size of a non-display area.

Abstract: A semiconductor device includes a substrate, a first P-type well region and a second P-type well region disposed in the substrate, wherein the first P-type well region and the second P-type well region are spaced apart from each other, an N-type source region disposed in the substrate, wherein the N-type source region is disposed spaced apart from the second P-type well region, an N-type drain region disposed in the second P-type well region, an N-type LDD region disposed near the N-type drain region, and a gate insulating layer and a gate electrode on the substrate, wherein the gate electrode partially overlaps the second P-type well region.

Abstract: Disclosed are a metal-semiconductor-metal two-dimensional electron gas varactor (MSM-2DEG) and a method of manufacturing the same. There is provided an MSM-2DEG varactor having an asymmetric structure, which includes a first gate formed on a semiconductor layer, and a second gate spaced apart at a predetermined distance from the first gate and formed on the semiconductor layer, wherein the first gate and the second gate are different in shape and gate length.

Abstract: A semiconductor device includes a substrate, a first P-type well region and a second P-type well region disposed in the substrate, wherein the first P-type well region and the second P-type well region are spaced apart from each other, an N-type source region disposed in the substrate, wherein the N-type source region is disposed spaced apart from the second P-type well region, an N-type drain region disposed in the second P-type well region, an N-type LDD region disposed near the N-type drain region, and a gate insulating layer and a gate electrode on the substrate, wherein the gate electrode partially overlaps the second P-type well region.

Abstract: Disclosed is a display device having a reduced non-display area. The display device includes an organic cover layer disposed on an encapsulation unit, an inner dam disposed between a substrate hole and a plurality of light-emitting elements, and a blocking element disposed between the substrate hole and the inner dam, the blocking element being disposed under the organic cover layer, whereby it is possible to prevent damage to a light-emitting stack. In addition, since the substrate hole is disposed in an active area, it is possible to reduce the size of a non-display area.

Abstract: A semiconductor device including a first P-type well region and an asymmetric second P-type well region each formed in a semiconductor substrate; a gate insulating layer and a gate electrode formed on the substrate; a first N-type source/drain region and a second N-type source/drain region that are formed on respective sides of the gate electrode; and an asymmetric LDD region of N-type formed to extend from the second source/drain region, wherein the asymmetric second P-type well region encompasses the second N-type source/drain region and the asymmetric LDD region, and the first N-type source/drain region both the asymmetric second P-type well region and the substrate, and the asymmetric second P-type well region is formed encompassing the second N-type source/drain region and in contact with the first N-type source/drain region.

Abstract: The present disclosure relates to a display device for improving productivity. The display device having a touch sensor is configured such that the total thickness of at least one inorganic insulation layer disposed on the region above each of dams is different from the total thickness of the at least one inorganic insulation layer disposed on a trench region between the dams. Thus, a photoresist for forming a routing line is formed so as to have a uniform thickness on the region above each of the dams and the trench region between the dams, and thus productivity is improved.

Abstract: A display device prevents cracks from spreading to an active area. The display device includes a substrate including an active area and a non-active area having a bending area, a thin-film transistor disposed in the active area, a light-emitting element disposed in the active area and connected to the thin-film transistor, an encapsulation layer disposed on the light-emitting element, a touch sensor disposed on the encapsulation layer, a touch pad disposed in the non-active area, a first routing line connecting the touch sensor to the touch pad via a second routing line in the bending area, and a crack prevention layer disposed on the second routing line in the bending area. Thus, the crack prevention layer is capable of preventing the occurrence of cracks in the bending area BA, thus preventing cracks from spreading to the active area AA.

Abstract: Disclosed is a display device capable of being manufactured through a simplified process and having improved touch sensitivity. The display device includes an encapsulation unit disposed on a light-emitting element, a touch sensor disposed on the encapsulation unit, and an intermediate layer disposed between the encapsulation unit and the touch sensor. The intermediate layer includes a first intermediate layer, having a dielectric constant that is lower than a dielectric constant of an organic film disposed above or under the intermediate layer, and a second intermediate layer, having greater hardness than the first intermediate layer, whereby touch sensitivity is improved while processing is simplified.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

Abstract: There is provided a photoconductive semiconductor switch device comprising: a semiconductor substrate configured to generate electrons and holes using incident light thereto; at least one pair of conductive layers disposed on the semiconductor substrate, wherein one pair of the conductive layers consists of first and second conductive layers spaced apart from each other, wherein each of the first and second conductive layers contains abundant electrical carriers to have a low resistance; and first and second electrodes disposed on at least partially on the first and second conductive layers respectively. In this way, the application of the photoconductive semiconductor switch device may be widened.

Abstract: Provided is a metamaterial-based polarization converter in which a reception antenna and a transmission antenna are formed by using a metamaterial, to thus emit an incident non-polarized or polarized electromagnetic wave in an angle-converted polarization direction. The metamaterial-based electromagnetic wave polarization converter includes: a reception antenna made of a metamaterial and allowing incident electromagnetic waves to resonate at a surface of the reception antenna to generate a surface current; a transmission antenna at a rear side of the reception antenna, and made of an angle-converted metamaterial to thus allow the electromagnetic waves transferred from the reception antenna to resonate to then be emitted in a polarization direction; and a connector made of a conductive material that connects the reception antenna and the transmission antenna, to thereby transfer a surface current generated from the reception antenna to the transmission antenna.

Abstract: A semiconductor device includes a substrate, a first P-type well region and a second P-type well region disposed in the substrate, wherein the first P-type well region and the second P-type well region are spaced apart from each other, an N-type source region disposed in the substrate, wherein the N-type source region is disposed spaced apart from the second P-type well region, an N-type drain region disposed in the second P-type well region, an N-type LDD region disposed near the N-type drain region, and a gate insulating layer and a gate electrode on the substrate, wherein the gate electrode partially overlaps the second P-type well region.