Abstract: A positive electrode active material and method of preparing the same are disclosed herein. The positive electrode active material can have high capacity and high rate capability. In some embodiments, a positive electrode active material includes lithium transition metal oxide particles having a lithium transition metal oxide represented by Formula 1, wherein an interplanar spacing of (003) crystal planes ((003) d-spacing) of the lithium transition metal oxide of a surface of the particles is larger than a (003) d-spacing of the lithium transition metal oxide inside the particles: wherein 0.8?a?1.2, 0.6?x<1, 0<y<0.4, 0<z<0.4, and 0?w?0.1, and M1 is at least one selected from the group consisting of Al, Zr, B, W, Mg, Ce, Hf, Ta, La, Ti, Sr, Ba, F, P, and S.

Abstract: A chip ejecting apparatus includes a table configured to be provided with a dicing tape and a target chip adhered to an upper surface of the dicing tape, an ejector unit including a plurality of gas holes configured to inject a gas toward a lower surface of the dicing tape, and a control unit configured to separately control on/off operations of the plurality of gas holes and select an active gas hole group from the plurality of gas holes. The active gas hole group is selected to overlap the target chip, and is configured to inject the gas toward the dicing tape along a direction from a first edge of the target chip toward a second edge of the target chip opposite to the first edge of the target chip.

Abstract: A chip ejecting apparatus includes a table configured to be provided with a dicing tape and a target chip adhered to an upper surface of the dicing tape, an ejector unit including a plurality of gas holes configured to inject a gas toward a lower surface of the dicing tape, and a control unit configured to separately control on/off operations of the plurality of gas holes and select an active gas hole group from the plurality of gas holes. The active gas hole group is selected to overlap the target chip, and is configured to inject the gas toward the dicing tape along a direction from a first edge of the target chip toward a second edge of the target chip opposite to the first edge of the target chip.

Abstract: A semiconductor chip bonding apparatus maintains a semiconductor chip in a parallel state with respect to a lead frame when applying a bonding load.

Abstract: Provided are an apparatus, method for separating a chip and a method for fabricating the apparatus. An apparatus for separating a chip, according to example embodiments, may include a suction holder. The suction holder may include an upper surface with at least one suction hole to suction and fix an adhesive tape to which a plurality of semiconductor chips may be attached. The apparatus for separating a chip may also include a rotatable plunger in the suction holder. The rotatable plunger may include an upper end configured to pass through the at least one suction hole and to project over the suction holder upon rotation of the rotatable plunger. The apparatus for separating a chip may also include a vertically movable plunger lifter. The vertically movable plunger lifter may be configured to rotate the rotatable plunger by contacting and raising a lower end of the rotatable plunger.

Abstract: A semiconductor chip bonding apparatus maintains a semiconductor chip a parallel state with a lead frame when applying a bonding load.