Abstract: The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.

Abstract: The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.

Abstract: Provided are an atomic layer junction oxide, a method of preparing the atomic layer junction oxide, and a photoelectric conversion device including the atomic layer junction oxide. The atomic layer junction oxide can include an n-type doped atomic layer oxide; an intrinsic atomic layer oxide; a p-type doped atomic layer oxide; and an intrinsic atomic layer oxide.

Abstract: Provided are an atomic layer junction oxide, a method of preparing the atomic layer junction oxide, and a photoelectric conversion device including the atomic layer junction oxide.

Abstract: The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.

Abstract: Disclosed is a piezoelectric ink jet printer head in which a chamber and an ink storage are integrally formed. A process for manufacturing the ink jet printer head is also disclosed.

Abstract: The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.

Abstract: A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices.

Abstract: Disclosed are dielectric devices having a multi-layer oxide artificial lattice and a method for manufacturing the same. The method is adapted for a dielectric device having a substrate, a dielectric film coated on the substrate so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, a dielectric device having a substrate, a bottom electrode deposited on the substrate so as to be patterned thereon, a dielectric film coated on an upper portion of the lower electrode so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, or a dielectric device having a substrate, a bottom electrode deposited on the substrate and selectively patterned thereon, and a dielectric film coated on an upper portion of the bottom electrode so as to be selectively patterned thereon. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness.