Patents by Inventor Jairaj PAYYAPILLY

Jairaj PAYYAPILLY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9748366
    Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.
    Type: Grant
    Filed: September 19, 2014
    Date of Patent: August 29, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Jong Mun Kim, Kenny L. Doan, Li Ling, Jairaj Payyapilly, Srinivas D. Nemani, Daisuke Shimizu, Yuju Huang
  • Publication number: 20150097276
    Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.
    Type: Application
    Filed: September 19, 2014
    Publication date: April 9, 2015
    Inventors: Jong Mun Kim, Kenny L. Doan, Li Ling, Jairaj Payyapilly, Srinivas D. Nemani, Daisuke Shimizu, Yuju Huang
  • Patent number: 8778207
    Abstract: Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CxFy or CxHyFz, and at least one of COS and CF3I. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SF6 or NF3, and/or an oxidizer, such as O2, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: July 15, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Jong Mun Kim, Jairaj Payyapilly, Kenny Linh Doan
  • Publication number: 20130224960
    Abstract: Methods for etching an oxide layer disposed on a substrate through a patterned layer defining one or more features to be etched into the oxide layer are provided herein. In some embodiments, a method for etching an oxide layer disposed on a substrate through a patterned layer defining one or more features to be etched into the oxide layer may include: etching the oxide layer through the patterned layer using a process gas comprising a polymer forming gas and an oxygen containing gas to form the one or more features in the oxide layer; and pulsing at least one of the polymer forming gas or the oxygen containing gas for at least a portion of etching the oxide layer to control a dimension of the one or more features.
    Type: Application
    Filed: October 27, 2011
    Publication date: August 29, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Jairaj Payyapilly, Jong Mun Kim, Kenny Doan, Li Ling
  • Publication number: 20130122712
    Abstract: Methods of etching HAR features in a dielectric layer are described. In one embodiment, a substrate is provided into an etch chamber. The substrate has a patterned mask disposed on a dielectric layer formed thereon where the patterned mask has openings. A gas mixture is provided into the etch chamber, the gas mixture includes CO, O2, a fluorocarbon gas, and an optional inert gas. A plasma is formed from the gas mixture.
    Type: Application
    Filed: October 19, 2012
    Publication date: May 16, 2013
    Inventors: Jong Mun KIM, Kenny Linh Doan, Li Ling, Jairaj Payyapilly, Daisuke Shimuzu, Srinivas D. Nemani, Thorsten B. Lill
  • Publication number: 20130109188
    Abstract: Plasma etching of boron-doped carbonaceous mask layers with an etchant gas mixture including CxFy or CxHyFz, and at least one of COS and CF3I. Etchant gas mixtures may further include a carbon-free fluorine source gas, such as SF6 or NF3, and/or an oxidizer, such as O2, for higher etch rates. Nitrogen-containing source gases may also be provided in the etchant gas mixture to reduce sidewall bowing in high aspect ratio (HAR) feature etches.
    Type: Application
    Filed: October 12, 2012
    Publication date: May 2, 2013
    Inventors: Jong Mun KIM, Jairaj PAYYAPILLY, Kenny Linh DOAN