Patents by Inventor James D. Carducci

James D. Carducci has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10811226
    Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: October 20, 2020
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Kenneth S. Collins, Richard Fovell, Jason A. Kenney, Kartik Ramaswamy, Shahid Rauf
  • Patent number: 10780447
    Abstract: Apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead are provided herein. In some embodiments, a heat transfer system includes a heat transfer plate having a first diameter and a plurality of independent flow paths disposed within the heat transfer plate, each flow path having a first inlet and a first outlet; a supply conduit system having a second inlet fluidly coupled to a plurality of second outlets, wherein each second outlet is fluidly coupled to a corresponding first inlet of the heat transfer plate; and a return conduit system having a third outlet fluidly coupled to a plurality of third inlets, wherein each third inlet is fluidly coupled to a corresponding first outlet of the heat transfer plate, wherein the supply conduit system and the return conduit system are each disposed within an imaginary cylindrical projection above the heat transfer plate.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: September 22, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Richard Fovell, Silverst Rodrigues, James D. Carducci
  • Publication number: 20200185192
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Application
    Filed: February 14, 2020
    Publication date: June 11, 2020
    Inventors: James D. CARDUCCI, Hamid TAVASSOLI, Ajit BALAKRISHNA, Zhigang CHEN, Andrew NGUYEN, Douglas A. BUCHBERGER, JR., Kartik RAMASWAMY, Shahid RAUF, Kenneth S. COLLINS
  • Patent number: 10615006
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: April 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10615004
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: April 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Patent number: 10580620
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: March 3, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20200035454
    Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.
    Type: Application
    Filed: October 7, 2019
    Publication date: January 30, 2020
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Patent number: 10546728
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10535502
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10510515
    Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: December 17, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, Shahid Rauf, Kallol Bera, James D. Carducci, Michael R. Rice, Yue Guo
  • Patent number: 10475626
    Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: November 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Patent number: 10453656
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20190287765
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
  • Patent number: 10418225
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: September 17, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Patent number: 10373807
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 6, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Publication number: 20190228970
    Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
    Type: Application
    Filed: April 1, 2019
    Publication date: July 25, 2019
    Inventors: Yang YANG, Lucy CHEN, Jie ZHOU, Kartik RAMASWAMY, Kenneth S. COLLINS, Srinivas D. NEMANI, Chentsau YING, Jingjing LIU, Steven LANE, Gonzalo MONROY, James D. CARDUCCI
  • Patent number: 10312056
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: June 4, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Patent number: 10249470
    Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: April 2, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jason A. Kenney, James D. Carducci, Kenneth S. Collins, Richard Fovell, Kartik Ramaswamy, Shahid Rauf
  • Patent number: 10249495
    Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: April 2, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Yang Yang, Lucy Chen, Jie Zhou, Kartik Ramaswamy, Kenneth S. Collins, Srinivas D. Nemani, Chentsau Ying, Jingjing Liu, Steven Lane, Gonzalo Monroy, James D. Carducci
  • Patent number: D890033
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: July 14, 2020
    Assignee: CARDUCCI DUAL SPORT, LLC.
    Inventors: James D. Carducci, Sherry Cordova