Abstract: A plurality of thin pressure sensors are made by processing a first large wafer (20, 110) to provide a plurality of electronic devices (28, 122, 124, 125) having a characteristic which varies inversely with strain, and processing a second wafer (40) to provide a plurality of cavities (46) each registered on the second wafer so as to be registerable with a corresponding device on the first wafer. The wafers (20, 40, 110) have thick undoped silicon substrates (21, 41, 114) which are utilized as handles or carriers during the processing, and are stripped off by etching to a highly doped boron etch stop layer (22, 42, 112) when the processing has proceeded to a point where the need therefore has been satisfied. The first wafers (20, 110) are provided with a suitable pattern of borosilicate glass (except in the region where the pressure sensors are formed) so that the two wafers may be joined by a field assisted bonding at a suitable temperature in a vacuum.

Abstract: A plurality of thin pressure sensors are made by processing a first large wafer (20, 110) to provide a plurality of electronic devices (28, 122, 124, 125) having a characteristic which varies inversely with strain, and processing a second wafer (40) to provide a plurality of cavities (46) each registered on the second wafer so as to be registerable with a corresponding device on the first wafer. The wafers (20, 40, 110) have thick undoped silicon substrates (21, 41, 114) which are utilized as handles or carriers during the processing, and are stripped off by etching to a highly doped boron etch stop layer (22, 42, 112) when the processing has proceeded to a point where the need therefore has been satisfied. The first wafers (20, 110) are provided with a suitable pattern of borosilicate glass (except in the region where the pressure sensors are formed) so that the two wafers may be joined by a field assisted bonding at a suitable temperature in a vacuum.

Abstract: A substrate (10) is thinned to provide a membrane (12) on which are disposed a counter electrode (20), a film of low conductivity piezoelectric material (22) and a top electrode (24) to form a half wavelength, bulk mode resonator employing a longitudinal acoustic wave. A second top electrode (25) provides a second resonator acoustically coupled to the first, to form a filter. Piezoelectric films include zinc oxide, and aluminum nitride; substrates include silicon and aluminum oxide. A buffer layer (18), such as silicon dioxide may assist in preventing surface aberations and providing proper crystallographic orientation.

Abstract: A method for stabilizing organic materials against autoxidation, a composition useful therefor and organic compositions containing the autoxidation stabilizers. The method comprises the steps of adding a compound capable of reducing the peroxide content and a transition metal containing compound to an organic material and thereafter recovering a stabilized composition. The components of the inhibitor may be added separately or simultaneously and the same may be added directly to the organic material or first combined in a concentrated solution and then added to the organic material. The basic and neutral primary, secondary and tertiary amines have been found particularly effective in reducing the peroxide content. Also, the transition metal salts containing cations which easily change valence by a single electron are the most effective transition metal salts. The inhibitor combination is effective in both liquid and solid compositions.