Abstract: An embodiment of the present invention provides an apparatus, comprising an integrated circuit, wherein a first portion of the integrated circuit is placed on a top tier substrate and a second portion of the integrated circuit is placed on a bottom tier substrate stacked adjacent the top tier substrate and wherein the first portion and the second portion of the integrated circuit are interconnected; and printed spiral arms stacked vertically on both the top and bottom surface of the top tier substrate thereby creating high Q inductors.

Abstract: A semiconductor structure is described having a first electrode and a second electrode disposed on a surface of the structure and a bridging conductor connected between the first electrode and the second electrode. The bridging conductor includes a plurality of layers of different metals wherein the plurality of layers of different metals includes a layer of refractory metal adjacent a layer of electrically conductive metal. In a preferred embodiment, the refractory metal is titanium and the electrically conductive metal is gold. With such an arrangement, a semiconductor structure is provided which is effective in preventing restructuring due to mechanical stresses induced in the metal by dissimilar thermal expansion coefficients when electrical pulsing cycles the temperature of the semiconductor structure.

Abstract: A method of tuning a microwave integrated circuit by trimming desired film-type circuit patterns included therein by a cold-pressure bonding technique is disclosed. More specifically, intercoupled circuit patterns are formed on a semi-insulating substrate with some circuit patterns having impedance characteristics of a desired nominal value. Each circuit pattern may comprise a plurality of conductive paths of malleable metal. Gaps are provided at appropriately chosen places in the conductive paths of predetermined circuit patterns. Selected ones of the gaps of the conductive paths are bridged to adjust the impedance characteristics of the associated predetermined circuit pattern by wiping with a probe the malleable metal of the conductive path at one end of the gap, across the gap to make contact with the malleable metal of the conductive path at the other end of the gap.

Abstract: A high peak power microwave generator is disclosed in which a plurality of transmission lines are connected to an output wave guide at predetermined intervals along the direction of propagation. Each transmission line is periodically charged, and this electromagnetic energy is released into the wave guide upon the actuation of a light activated silicon switch (LASS) diode connected to the transmission line. The LASS diodes are actuated simultaneously by a laser beam which traverses equal optical paths to each switch. The coincident switching of the transmission lines enables the power in each line to be additive in the wave guide, and much higher output pulses can be obtained. Further, the high speed switching capabilities afforded by the LASS diodes means that the resulting high power can be obtained at a much higher frequency.