Abstract: A gate isolation structure of a semiconductor device and method of making the same provides a trench in a silicon substrate, wherein a dielectric layer is formed on sidewalls and bottom of the trench, the dielectric layer having a first thickness on the sidewalls and a second thickness at the bottom that is greater than the first thickness. The thicker dielectric layer at the bottom substantially reduces gate charge to reduce the Miller Capacitance effect, thereby increasing the efficiency of the semiconductor device and prolonging its life.

Abstract: A gate isolation structure of a semiconductor device and method of making the same provides a trench in a silicon substrate, wherein a dielectric layer is formed on sidewalls and bottom of the trench, the dielectric layer having a first thickness on the sidewalls and a second thickness at the bottom that is greater than the first thickness. The thicker dielectric layer at the bottom substantially reduces gate charge to reduce the Miller Capacitance effect, thereby increasing the efficiency of the semiconductor device and prolonging its life.

Abstract: A gate isolation structure of a semiconductor device and method of making the same provides a trench in a silicon substrate, wherein a dielectric layer is formed on sidewalls and bottom of the trench, the dielectric layer having a first thickness on the sidewalls and a second thickness at the bottom that is greater than the first thickness. The thicker dielectric layer at the bottom substantially reduces gate charge to reduce the Miller Capacitance effect, thereby increasing the efficiency of the semiconductor device and prolonging its life.

Abstract: A point of use slurry dispensing system with controls for dilution, temperature and oxidizer/etchant/additive infusion. A slurry in unmixed form and a diluting agent are independently pumped to a pad on a CMP tool. Liquid heaters are used to heat the slurry and the diluting agent to a desirable temperature. The actual mixing occurs at the point of use on the pad or in a dispensing line just prior to the point of use. In some instances a third independent distribution line is used to dispense an oxidizer, etchant and/or chemical additive at or near the point of use.

Abstract: A patterned metallized film comprises a transparent or translucent polymeric film coated on one side with a thin coating of metal, with the metal coating and the polymeric film being bonded to each other. The metal coating has a multiplicity of fractures of different sizes distributed throughout the coating in a prescribed pattern so that the reflection of light by the fractured metal coating produces a three-dimensional illusion of the pattern when viewed through said polymeric film. The film may also include a layer of adhesive on the opposite side of the metal coating from the polymeric film, and a paper backing sheet on the opposite side of the adhesive layer from the metal coating. The fractures are preferably formed by heating the metallized film non-uniformly so that selected areas of the film expand and soften at a rate different from the rate at which other areas of said film expand and soften.