Abstract: LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.

Abstract: A light source based on an optical frequency mixer is disclosed. The light source has a first laser for emitting light at a first optical frequency, and a plurality of second lasers for emitting light at different second optical frequencies. The optical frequency mixer provides output light beams at mixed optical frequencies of the first and second lasers. Wavelength of output light beams may be tuned by tuning wavelength of any of the first or second lasers. In this manner, RGB wavelength-tunable light sources may be constructed based on red or near-infrared lasers. The wavelength tunability of the output light beams may be used to angularly scan or refocus the light beams.

Abstract: A GaN layer of micro-LEDs is exposed to ion implantation to amorphize one or more regions of the GaN layer. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions are implanted in a region overlapping an active region that emits light to function as a converging GRIN (gradient-index) lens. The ion implanted regions collimate light rays that propagate along predetermined directions. As such, the light extraction from and the focus of the micro-LEDs is increased.

Abstract: A display device includes a display panel having a first emission region and one or more second emission regions disposed adjacent to the first emission region. The display device includes a plurality of light emitters, arranged in the first emission region, corresponding to a first color gamut and a plurality of light emitters, arranged in the one or more second emission regions, corresponding to a second color gamut that is distinct from the first color gamut. A method for making a display device with a plurality of light emitters corresponding to a first color gamut in a first emission region and a plurality of light emitters corresponding to a second color gamut in a second emission region is also described.

Abstract: In one embodiment, a computing system may receive a target color and a propagated error for a pixel location. The system may determine an error-modified target color for the pixel location based on the received target color and the propagated error. The system may identify, based on a location of the error-modified target color in a three-dimensional color space, a subset of pre-determined colors in the three-dimensional color space. The error-modified target color may correspond to a weighted combination of the subset of pre-determined colors. The system may determine a pixel color for the pixel location based on the subset of pre-determined colors and respective weights associated with the subset of pre-determined colors. The system may determine, based on the pixel color, driving signals for light-emitting elements associated with the pixel location. The system may output the driving signals to control the light-emitting elements associated with the pixel location.

Abstract: The disclosed projector device may include (1) a first monochromatic emitter array having a plurality of emitters of a first color disposed in a two-dimensional configuration and (2) a second monochromatic emitter array having a plurality of emitters of a second color disposed in a two-dimensional configuration. The first and second monochromatic emitter arrays may be configured to emit images of the first and second colors into a waveguide configuration, and the first color may be different than the second color. Associated display systems and methods are also provided.

Abstract: In one embodiment, a computing system may receive a target color and a propagated error for a pixel location. The system may determine an error-modified target color for the pixel location based on the received target color and the propagated error. The system may identify, based on a location of the error-modified target color in a three-dimensional color space, a subset of pre-determined colors in the three-dimensional color space. The error-modified target color may correspond to a weighted combination of the subset of pre-determined colors. The system may determine a pixel color for the pixel location based on the subset of pre-determined colors and respective weights associated with the subset of pre-determined colors. The system may determine, based on the pixel color, driving signals for light-emitting elements associated with the pixel location. The system may output the driving signals to control the light-emitting elements associated with the pixel location.

Abstract: The disclosed projector device may include (1) a first monochromatic emitter array having a plurality of emitters of a first color disposed in a two-dimensional configuration and (2) a second monochromatic emitter array having a plurality of emitters of a second color disposed in a two-dimensional configuration. The first and second monochromatic emitter arrays may be configured to emit images of the first and second colors into a waveguide configuration, and the first color may be different than the second color. Associated display systems and methods are also provided.

Abstract: Disclosed herein are techniques for wafer-to-wafer bonding for manufacturing light emitting diodes (LEDs). In some embodiments, a method of manufacturing LEDs includes etching a semiconductor material to form a plurality of adjacent mesa shapes. The semiconductor material includes one or more epitaxial layers. The method also includes forming a passivation layer to fill gaps between the adjacent mesa shapes, planarizing the passivation layer to expose a contact layer formed on a first surface of the semiconductor material, and bonding a base wafer to the contact layer.

Abstract: A display device includes a display panel having a first emission region and a second emission region that is distinct from and mutually exclusive to the first emission region and surrounds the first emission region. The display device includes a first plurality of light emitters arranged in the first emission region, a plurality of activation lines for the first emission region, a second plurality of light emitters arranged in the second emission region, and a plurality of activation lines for the second emission region. A single activation line of the plurality of activation lines for the first emission region is electrically coupled with a first number of light emitters in the first emission region and a single activation line of the plurality of activation lines for the second emission region is electrically coupled with a second number, distinct from the first number, of light emitters in the second emission region.

Abstract: Disclosed herein are techniques for wafer-to-wafer bonding for manufacturing light emitting diodes (LEDs). In some embodiments, a method of manufacturing LEDs includes modifying a p-type layer of a semiconductor material to form a plurality of alternating high resistivity areas and low resistivity areas, wherein the low resistivity areas correspond to light emitters; bonding a base wafer to a first surface of the p-type layer; removing a substrate from a second surface of the semiconductor material, wherein the second surface of the semiconductor material is opposite to the first surface of the p-type layer; and patterning a trench between each adjacent pair of the light emitters.

Abstract: The disclosed apparatus may include (1) a plurality of monochromatic emitter arrays, where each of the plurality of monochromatic emitter arrays has a plurality of emitters disposed in a two-dimensional configuration and emits a monochromatic image of a corresponding color, (2) a waveguide configuration that includes (a) a top surface, (b) a bottom surface disposed opposite the top surface, (c) a coupling area that receives the monochromatic images, and (d) a decoupling area that projects a plurality of instances of a polychromatic image including a combination of the monochromatic images toward an eyebox through the bottom surface, and (3) an actuator system that produces lateral shifting of the plurality of instances of the polychromatic image between at least two positions relative to the waveguide configuration. Various other methods and systems are also disclosed.

Abstract: Disclosed herein are techniques for wafer-to-wafer bonding for manufacturing light emitting diodes (LEDs). In some embodiments, a method of manufacturing LEDs includes etching a semiconductor material to form a plurality of adjacent mesa shapes. The semiconductor material includes one or more epitaxial layers. The method also includes forming a passivation layer within gaps between the adjacent mesa shapes and bonding a base wafer to a first surface of the semiconductor material.

Abstract: LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.

Abstract: A display device includes a display panel having a first emission region and one or more second emission regions disposed adjacent to the first emission region. The display device includes a plurality of light emitters, arranged in the first emission region, corresponding to a first color gamut and a plurality of light emitters, arranged in the one or more second emission regions, corresponding to a second color gamut that is distinct from the first color gamut. A method for making a display device with a plurality of light emitters corresponding to a first color gamut in a first emission region and a plurality of light emitters corresponding to a second color gamut in a second emission region is also described.

Abstract: A display device includes an optical assembly and a display that includes a front surface and a back surface. The display is configured to output image light from the front surface and transmit ambient light from the back surface to the front surface. The optical assembly includes a substrate that has a substantially uniform thickness, a beam splitter, and a reflector. The optical assembly is configured to receive the image light output from the front surface of the display and to transmit a portion of the image light at a first non-zero optical power via an optical path that includes reflections at the reflector and at the beam splitter. The optical assembly is also configured to transmit a portion of the ambient light through the optical assembly at a second optical power without reflection at the reflector. The second optical power is less than the first optical power.

Abstract: The disclosed projector device may include (1) a first monochromatic emitter array having a plurality of emitters of a first color disposed in a two-dimensional configuration and (2) a second monochromatic emitter array having a plurality of emitters of a second color disposed in a two-dimensional configuration. The first and second monochromatic emitter arrays may be configured to emit images of the first and second colors into a waveguide configuration, and the first color may be different than the second color. Associated display systems and methods are also provided.

Abstract: A display device includes a display panel including a plurality of light emitters spaced apart by a first representative distance in a first emission region and a plurality of light emitters spaced apart by a second representative distance different from the first representative distance in a second emission region that surrounds the first emission region. The display device also includes a filter coupled with the display panel for transmitting light projected by the display panel through the filter. The filter has a first filter region configured to cause a first distribution of light emitted from a first light emitter in the first emission region and a second distribution of light emitted from a second light emitter in the first emission region so that the first distribution at least partially overlaps with the second distribution.

Abstract: Embodiments of the present disclosure generally relate to light emitting diodes LEDs and methods of manufacturing the LEDs. The LEDs include a mesa-structure that improves light extraction of the LEDs. Furthermore, the process for forming the LEDs refrains from using physical etching to a quantum well active region of the LEDs to prevent compromising performance at the quantum well sidewall.

Abstract: The disclosed waveguide display device may include a waveguide and one or more projector assemblies configured to project image light into the waveguide, where each of the one or more projector assemblies includes a first monochromatic emitter array having a plurality of emitters of a first color disposed in a two-dimensional configuration and a second monochromatic emitter array having a plurality of emitters of a second color disposed in a two-dimensional configuration. The display device may also include at least one application specific integrated circuit (ASIC) configured to drive the first and second monochromatic emitter arrays to emit images of the first and second color along a common axis, with the first color being different from the second color. Various other devices, systems, and methods are also disclosed.