Patents by Inventor Jan Martijn Krans

Jan Martijn Krans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130231522
    Abstract: To provide a breath pacing system and a corresponding method for pacing the respiratory activity of a subject that provide the possibility to adapt the output signal to the respiration characteristics of the subject automatically and effectively a breath pacing system (10) for pacing the respiratory activity of a subject and a respective method is proposed, comprising: an input unit (14) for generating or determining an input signal related to a respiration characteristic of a subject, a signal analyzing unit (16) provided to recognize a signal pattern within the input signal, and an output unit (12) for outputting output signals corresponding to a desired breathing sequence, wherein said output unit (12) is provided to be activated, upon a starting signal, to output a sequence of output signals comprising a signal pattern related to a previously recognized signal pattern.
    Type: Application
    Filed: November 15, 2011
    Publication date: September 5, 2013
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Jan Martijn Krans, Bartel Van De Sluis, Juergen Vogt, Ronaldus Aarts, Tim Tijs, Ype Brada, Maarten Van Den Boogaard, Jan Bennik, Roy Raymann, Petronella Zwartkruis-Pelgrim, Jia Du
  • Publication number: 20130190554
    Abstract: The invention relates to a breath pacing apparatus, comprising a haptic output unit with a variable haptically perceivable feature, said haptic output unit being provided to change said haptically perceivable feature periodically according to a sequence of desired respiration cycles, wherein a characteristic of the change of said haptically perceivable feature is related to the length of the respiration cycles. The invention is further related to a corresponding method for pacing the respiration of a person.
    Type: Application
    Filed: September 14, 2011
    Publication date: July 25, 2013
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Juergen Vogt, Jan Martijn Krans, Jia Du, Tim Johannes Willem Tijs, Ronaldus Maria Aarts
  • Patent number: 6693278
    Abstract: In the production of semiconductors it is necessary to inspect circuit patterns on wafers. In circuits having very small details (for example, 40 nm), inspection can be carried out by means of electron beam columns, a plurality of wafers then being inspected at the same time and the signals being compared on-line. In an inspection apparatus in accordance with the invention more beam columns 1 to 7 are provided for every wafer A, B, C in order to obtain a high feed-through rate. The inspection is carried out by way of an x-y scan and the wafers are fed through according to a rectilinear movement, thus providing the possibility of scanning only the Care Area Fraction of the wafers, resulting in a high feed-through rate for the wafers in the inspection apparatus.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: February 17, 2004
    Assignee: FEI Company
    Inventors: Diederik Jan Maas, Jan Martijn Krans
  • Patent number: 6646261
    Abstract: The invention relates to wafer inspection by means of a scanning electron microscope (SEM) column in which the secondary electron detector 22, 24 is positioned centrally above the objective lens of the column. Secondary electrons that leave the central part of the specimen in a direction substantially perpendicular to its surface are inevitably collected in the central part of the detector surface where the bore 36 for the primary beam 6 is situated. Consequently, such electrons do not contribute to the detector signal. In order to avoid such a detrimental loss of signal contribution, it is proposed to provide a central electrode 35 in the central bore 36 such that secondary electrons that approach the bore are driven aside towards the electron-sensitive detector region 48.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: November 11, 2003
    Inventor: Jan Martijn Krans
  • Patent number: 6593584
    Abstract: Multi-beam lithography apparatus is used for writing patterns on a substrate 14 such as a wafer for ICs. The patterns may have details of various dimensions. In order to enhance the production rate, it is attractive to write fine details with a small spot 16 and large details with a large spot. It is known to vary the spot size by varying the emissive surface of the electron source. In accordance with the invention the spot size is varied by varying the size 22 of the beam limiting aperture 20, thus enabling optimization of the beam current in dependence on the spot size. A preferred embodiment is provided with an additional (condenser) lens 24 such that the object distance remains constant when the magnification of the lens system 18, 24 is varied.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: July 15, 2003
    Assignee: FEI Company
    Inventors: Jan Martijn Krans, Peter Christiaan Tiemeijer
  • Publication number: 20020125428
    Abstract: The invention relates to wafer inspection by means of a scanning electron microscope (SEM) column in which the secondary electron detector 22, 24 is positioned centrally above the objective lens of the column. Secondary electrons that leave the central part of the specimen in a direction substantially perpendicular to its surface are inevitably collected in the central part of the detector surface where the bore 36 for the primary beam 6 is situated. Consequently, such electrons do not contribute to the detector signal. In order to avoid such a detrimental loss of signal contribution, it is proposed to provide a central electrode 35 in the central bore 36 such that secondary electrons that approach the bore are driven aside towards the electron-sensitive detector region 48.
    Type: Application
    Filed: December 20, 2001
    Publication date: September 12, 2002
    Inventor: Jan Martijn Krans
  • Publication number: 20020109089
    Abstract: A SEM with an electrostatic objective lens 14, 16 and a detector 6, 8 for through-the-lens detection of secondary electrons (SEs) 24. A suitable collection efficiency of the SEs would require a comparatively high electric field near the surface of the specimen 18, whereas suitable voltage contrast (voltage range of the order of from 1 to 5 V) would require a moderate electric field near the surface of the specimen. In accordance with the invention an adjustable voltage source is provided in order to adjust at will the voltage of the final electrode 16 relative to the specimen, such that the voltage contrast and the collection efficiency can be adjusted to an optimum value in conformity with the measurement requirements.
    Type: Application
    Filed: October 26, 2001
    Publication date: August 15, 2002
    Inventors: Jan Martijn Krans, Sander Gijsbert Den Hartog, Marcellinus Petrus Carolus Michael Krijn
  • Publication number: 20020079447
    Abstract: In the production of semiconductors it is necessary to inspect circuit patterns on wafers. In circuits having very small details (for example, 40 nm), inspection can be carried out by means of electron beam columns, a plurality of wafers then being inspected at the same time and the signals being compared on-line. In an inspection apparatus in accordance with the invention more beam columns 1 to 7 are provided for every wafer A, B, C in order to obtain a high feed-through rate. The inspection is carried out by way of an x-y scan and the wafers are fed through according to a rectilinear movement, thus providing the possibility of scanning only the Care Area Fraction of the wafers, resulting in a high feed-through rate for the wafers in the inspection apparatus.
    Type: Application
    Filed: December 20, 2001
    Publication date: June 27, 2002
    Inventors: Diederik Jan Maas, Jan Martijn Krans
  • Publication number: 20020079449
    Abstract: The invention relates to a SEM with an electrostatic objective lens 14, 16 and a detector 6, 8 for through-the-lens detection of electrons 24. In accordance with the invention a voltage contrast (voltage range of the order of magnitude of from 1 to 10 V) is achieved by subdividing this detector surface 9 into separate regions, preferably concentric annular regions 36 and 38, and by electronically combining the signals from these regions.
    Type: Application
    Filed: December 6, 2001
    Publication date: June 27, 2002
    Inventors: Marcellinus Petrus Carolus Michael Krijn, Jan Martijn Krans
  • Publication number: 20010017739
    Abstract: Multi-beam lithography apparatus is used for writing patterns on a substrate 14 such as a wafer for ICs. The patterns may have details of various dimensions. In order to enhance the production rate, it is attractive to write fine details with a small spot 16 and large details with a large spot. It is known to vary the spot size by varying the emissive surface of the electron source. In accordance with the invention the spot size is varied by varying the size 22 of the beam limiting aperture 20, thus enabling optimization of the beam current in dependence on the spot size. A preferred embodiment is provided with an additional (condenser) lens 24 such that the object distance remains constant when the magnification of the lens system 18, 24 is varied.
    Type: Application
    Filed: December 22, 2000
    Publication date: August 30, 2001
    Inventors: Jan Martijn Krans, Peter Christiaan Tiemeijer