Abstract: A substrate processing apparatus is provided and includes: a support unit including a spin chuck and a centering jig that is on the spin chuck, the spin chuck configured to support and rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a swing arm including a correction unit that includes a sensor and an emitter, the swing arm configured to move such that the correction unit moves to a target point on the substrate, and the emitter configured to irradiate a beam towards the substrate; and a controller configured to: control the spin chuck and the swing arm; and determine whether a movement trajectory of the swing arm is aligned with a rotation center of the spin chuck based on information acquired by the sensor about the centering jig.

Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.

Abstract: Provided is a control device and a substrate processing apparatus including the same. The substrate processing apparatus includes a support unit configured to support and rotate a first substrate, the support unit including a spin chuck, a spray unit configured to spray a processing fluid on the first substrate, a correction unit on a swing arm and configured to irradiate a beam onto the first substrate when the processing fluid is provided on the first substrate, wherein the swing arm is adjacent to the spin chuck and is configured to move the correction unit to a target point on the first substrate, and a controller configured to control the spin chuck and the swing arm, and correct a position error of the swing arm using a second substrate, wherein a plurality of anchor patterns are on the second substrate.

Abstract: A thermal image sensor and a method of manufacturing the same. The thermal image sensor includes: a substrate; a row electrode and a column electrode on the substrate; a multi-layer stack including an absorption layer and a temperature sensor; supporting arms that extend from diagonal corners of the multi-layer stack and that are spaced apart from both sides of the multi-layer stack, wherein the supporting arms have a concave-convex shape including a plurality of concave portions and a plurality of convex portions; and legs protruding from the row electrode and the column electrode, wherein the legs are connected to extended ends of the supporting arms to allow the multi-layer stack to float above the substrate.

Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

Abstract: The present exemplary embodiment relates to a negative active material precursor and its manufacturing method. According to an exemplary embodiment, it is disclosed a negative active material precursor, comprising: a stacked portion disposed at a center of the negative active material precursor and where graphite particles are stacked; and at least one of void portion disposed between the center and a surface portion of the negative active material precursor, wherein, an average particle diameter D50 is 10 to 18 ?m, and the below equation 1 is satisfied. ( D ? 90 - D ? 10 ) / D ? 50 ? 1. ? Equation ? 1 ? (In equation 1, D10, D50, and D90 mean particle diameters corresponding to 10, 50, and 90% volume accumulation from a small size, respectively.

Abstract: The present embodiment relates to an anode active material precursor, an anode active material, and a method for manufacturing same. An anode active material precursor according to an embodiment comprises: a carbon-based material comprising a metal compound; and a petroleum-based pitch, wherein the petroleum-based pitch comprises, on the basis of 10 parts by weight of the carbon-based material, 3 to 10 parts by weight, the softening point of the petroleum-based pitch may be 220-280° C., and the content of the metal compound may be greater than or equal to 10 ppm.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: An operation method of a first communication node may comprise: receiving one or more polarized radio signals transmitted from a second communication node included in the communication system through one or more receive polarized antennas included in the first communication node; performing a receive polarized antenna alignment state adjustment operation so that a detection result for a magnitude of an electric field excited by the one or more polarized radio signals is maximized; and receiving a first polarized signal transmitted from the second communication node through at least part of the one or more receive polarized antennas based on a result of the receive polarized antenna alignment state adjustment operation.

Abstract: A fetal stem cell-derived extracellular vesicle has immune tolerance properties. The extracellular vesicle containing a fetal stem cell-derived primal immunoglobulin contains various natural antibodies and complement proteins which can immediately respond to foreign infectious agents such as viruses, bacteria, pathogens, etc., and thus can effectively treat and prevent infectious diseases through an enhanced innate immune system. Methods are disclosed for preparing the fetal stem cell-derived extracellular vesicle.

Abstract: A multilayer capacitor includes: a body including a multilayer structure in which one or more first internal electrodes and one or more second internal electrodes are alternately stacked in a first direction with one or more dielectric layers interposed therebetween; and first and second external electrodes disposed on the body and spaced apart from each other to be connected to the first internal electrodes and the second internal electrodes, respectively. The body further includes: a plurality of side margin layers with the multilayer structure interposed therebetween in a second direction, perpendicular to the first direction; and one or more edge margin portions for providing a margin between an edge of at least one of the side margin layers in a third direction and the multilayer structure, and between an edge of at least one of the side margin layers in the first direction and the multilayer structure.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: The present invention relates to anticancer extracellular vesicles, a preparation method therefor, and an anticancer composition comprising same. Immune-tolerized extracellular vesicles containing LDHB and PGC-1? of the present invention provide cancer treatment, suppression of cancer metastasis, and cancer prevention technologies by normalizing cancer cell-specific aerobic glycolysis energy metabolic pathway in which lactate and hydrogen ions, which form a tumor microenvironment favorable for immune evasion, proliferation, metastasis and invasion of cancer cells, are produced, thereby enabling tumors to be effectively removed by means of the immune system of a patient.

Abstract: A semiconductor device is provided. The semiconductor device includes a first interlayer insulating layer, a lower wiring disposed inside the first interlayer insulating layer, an etching stop layer which includes first to third layers sequentially stacked on the first interlayer insulating layer, a second interlayer insulating layer disposed on the etching stop layer, and a via which penetrates the second interlayer insulating layer and the etching stop layer, the via is connected to the lower wiring, the via includes a first side wall that is in contact with the second layer, and a second side wall that is in contact with the second interlayer insulating layer, the via includes a first protrusion protruding in a horizontal direction from the first side wall inside the first layer, and a second protrusion protruding in the horizontal direction from the first side wall inside the third layer.

Abstract: A fetal stem cell-derived extracellular vesicle has immune tolerance properties. The extracellular vesicle containing a fetal stem cell-derived primal immunoglobulin contains various natural antibodies and complement proteins which can immediately respond to foreign infectious agents such as viruses, bacteria, pathogens, etc., and thus can effectively treat and prevent infectious diseases through an enhanced innate immune system. Methods are disclosed for preparing the fetal stem cell-derived extracellular vesicle.

Abstract: A multilayer capacitor includes: a body including a multilayer structure in which one or more first internal electrodes and one or more second internal electrodes are alternately stacked in a first direction with one or more dielectric layers interposed therebetween; and first and second external electrodes disposed on the body and spaced apart from each other to be connected to the first internal electrodes and the second internal electrodes, respectively. The body further includes: a plurality of side margin layers with the multilayer structure interposed therebetween in a second direction, perpendicular to the first direction; and one or more edge margin portions for providing a margin between an edge of at least one of the side margin layers in a third direction and the multilayer structure, and between an edge of at least one of the side margin layers in the first direction and the multilayer structure.

Abstract: The disclosure relates to the establishment of a cell line having immune tolerance property using an optimal temperature profiling technique under a human body-like environment, and use thereof. The stem cell line exhibits immune tolerance property as they consecutively secret and express HLA-G proteins, and the culture medium of the stem cells contains a large amount of proteins capable of recovering various physiological functions and extracellular vesicles, and thus, the novel cell line or a culture medium thereof can be effectively used in various industries such as medicines and cosmetics.

Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.