Patents by Inventor Jang Jung Lee
Jang Jung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11837435Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.Type: GrantFiled: August 19, 2020Date of Patent: December 5, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wei Hung, Jang Jung Lee
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Publication number: 20230386783Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Inventors: Shih-Wei HUNG, Jang Jung LEE
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Patent number: 11774241Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: December 15, 2021Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Patent number: 11703523Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.Type: GrantFiled: July 21, 2021Date of Patent: July 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang-Jung Lee
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Patent number: 11566794Abstract: Disclosed herein are an air conditioner includes a housing having an outlet, and a blade configured to open and close the outlet and having a plurality of holes. The blade includes a first side extending in a first direction, a second side extending in a second direction, and a block area in which none of the plurality of holes are formed, at least a number of the plurality of holes are disposed on a first line extending in the first direction, and a second line spaced in the second direction from the first line, respectively, where the second line extends in the first direction, and the block area comprises an area formed in the first direction between the first line and the second line.Type: GrantFiled: April 26, 2018Date of Patent: January 31, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jang Jung Lee, Hyun-Ho Kim, Hong Yeol Moon, Chul Byung Park, Hyeon U Park, Seung-Jun Yoon, Jei Min Choi
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Patent number: 11493230Abstract: Disclosed is an air conditioner, and more particularly, to an air conditioner having an airflow guide to make the flow of discharged air uniform. An air conditioner comprising a housing having a suction port and a discharge port, a heat exchanger arranged inside the housing, a blower fan configured to suck in air through the suction port, force the air to be subject to heat exchange with the heat exchanger, and discharge the heat-exchanged air through the discharge port, a first blade pivotally arranged to open or close the discharge port and having a first face and a second face opposite of the first face, a first flow path formed between the discharge port and the first face, a second flow path formed between the discharge port and the second face, a second blade movably installed inside the housing and a third blade formed to protrude from the second blade to guide air to the first flow path and the second flow path.Type: GrantFiled: January 31, 2018Date of Patent: November 8, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Keun Jeong Jang, Chur Ju Lee, Yong-Sam Kwon, Jang Jung Lee, Eun Sung Jo, Jong Moon Kim, Hyeong Joon Seo
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Publication number: 20220107179Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: December 15, 2021Publication date: April 7, 2022Inventors: Wei-Shan HU, Dong GUI, Jang Jung LEE, Che-Liang LI, Duen-Huei HOU, Wen-Chung LIU
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Patent number: 11274835Abstract: Disclosed herein is an air conditioner. The air conditioner include a housing having a discharge port, a blade located in the discharge port where the blade is rotatable with respect to the housing, a blade driving member configured to rotate the blade, and an elastic member located between the blade and the blade driving member and the elastic member including a stopper coupleable to the blade driving member.Type: GrantFiled: April 26, 2018Date of Patent: March 15, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hong Yeol Moon, Hyun-Ho Kim, Chul Byung Park, Hyeon U Park, Seung-Jun Yoon, Jang Jung Lee, Jei Min Choi
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Publication number: 20220059318Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.Type: ApplicationFiled: August 19, 2020Publication date: February 24, 2022Inventors: Shih-Wei HUNG, Jang Jung LEE
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Patent number: 11236996Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: July 13, 2020Date of Patent: February 1, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Patent number: 11226131Abstract: An air conditioner includes a housing having a discharge port, a blade rotatably provided in the discharge port, a blade drive unit configured to rotate the blade, a first support member configured to rotatably support the blade and comprising a first blade coupling portion, a second support member configured to rotatably support the blade, located to be closer to the blade drive unit than the first support member, and comprising a second blade coupling portion having a size different from that of the first blade coupling portion.Type: GrantFiled: April 27, 2018Date of Patent: January 18, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hong Yeol Moon, Hyun-Ho Kim, Chul Byung Park, Hyeon U Park, Seung-Jun Yoon, Jang Jung Lee, Jei Min Choi
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Patent number: 11211271Abstract: Systems and methods are provided for determining defects in a semiconductor structure sample that is prepared for analysis by microscopy. A semiconductor structure sample preparation and analysis system includes a semiconductor structure sample that includes a structure, a protective capping layer on the structure, and a gap filler material on the protective capping layer. A microscopy apparatus acquires an image of the semiconductor structure sample. Sample defect recognition circuitry determines the presence of a defect in the semiconductor structure sample based on the acquired image.Type: GrantFiled: August 23, 2019Date of Patent: December 28, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wei Hung, Jang Jung Lee
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Publication number: 20210366687Abstract: A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.Type: ApplicationFiled: August 9, 2021Publication date: November 25, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wei Hung, Jang Jung LEE
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Publication number: 20210349126Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang-Jung Lee
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Publication number: 20210343603Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. A structure in a semiconductor device is identified as including a test object for an APT procedure. A target region is identified in the structure where an APT specimen will be obtained. The target region is analyzed to determine whether a challenging component feature exists therein. A challenging component may include a hard-to-evaporate material, a hollow region, or a material unidentifiable with respect to the test object, or other structural features that pose a challenge to a successful APT analysis. If it is determined that a challenging component exists in the target region, the challenging component is replaced with a more suitable material before the APT specimen is prepared.Type: ApplicationFiled: July 13, 2021Publication date: November 4, 2021Inventors: Shih-Wei HUNG, Jang Jung LEE
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Patent number: 11087956Abstract: A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.Type: GrantFiled: June 26, 2019Date of Patent: August 10, 2021Inventors: Shih-Wei Hung, Jang Jung Lee
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Patent number: 11088036Abstract: The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. A structure in a semiconductor device is identified as including a test object for an APT procedure. A target region is identified in the structure where an APT specimen will be obtained. The target region is analyzed to determine whether a challenging component feature exists therein. A challenging component may include a hard-to-evaporate material, a hollow region, or a material unidentifiable with respect to the test object, or other structural features that pose a challenge to a successful APT analysis. If it is determined that a challenging component exists in the target region, the challenging component is replaced with a more suitable material before the APT specimen is prepared.Type: GrantFiled: June 21, 2019Date of Patent: August 10, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wei Hung, Jang Jung Lee
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Patent number: 11079405Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is generated, wherein the input waveform signal includes a plurality of read voltage steps with different voltage levels. The input waveform signal to the ferroelectric film is applied. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to a pixel of the ferroelectric film to generate a deflection signal. Spectrum data of the pixel based on the deflection signal is generated. The spectrum data of the pixel is analyzed to determine whether the spectrum data of the pixel is a ferroelectric signal or a non-ferroelectric signal.Type: GrantFiled: May 5, 2020Date of Patent: August 3, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang-Jung Lee
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Patent number: 11002451Abstract: An air conditioner according to an aspect of the present invention includes a housing arranged to be mounted on or embedded in a ceiling, a cover panel coupled to a lower portion of the housing, the cover panel including an inlet and an outlet, a blower fan configured to draw in air into the housing through the inlet and discharge air out of the housing through the outlet and a blade configured to open and close the outlet, the blade including a plurality of through holes to control the air discharged out of the housing through the outlet while the blade closes the outlet. With this structure, the air conditioner can discharge air in various ways by varying the wind direction, the wind speed, and the air amount of the discharged air.Type: GrantFiled: December 21, 2017Date of Patent: May 11, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byung Ghun Kim, Hyun-Ho Kim, Hyeonu Park, Woo Seog Song, Jang Jung Lee, Jei Min Choi, Jong Moon Kim, Hong Yeol Moon, Chul Byung Park, Hyeong Joon Seo, Seung-Jun Yoon, Jun Hwa Lee, Hyeong Kyu Cho, Jun Hwang
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Publication number: 20210057247Abstract: Systems and methods are provided for determining defects in a semiconductor structure sample that is prepared for analysis by microscopy. A semiconductor structure sample preparation and analysis system includes a semiconductor structure sample that includes a structure, a protective capping layer on the structure, and a gap filler material on the protective capping layer. A microscopy apparatus acquires an image of the semiconductor structure sample. Sample defect recognition circuitry determines the presence of a defect in the semiconductor structure sample based on the acquired image.Type: ApplicationFiled: August 23, 2019Publication date: February 25, 2021Inventors: Shih-Wei Hung, Jang Jung Lee