Patents by Inventor Janine K. Kardokus
Janine K. Kardokus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9279178Abstract: Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice.Type: GrantFiled: April 25, 2008Date of Patent: March 8, 2016Assignee: Honeywell International Inc.Inventors: Janine K. Kardokus, Michael Pinter, Michael D. Payton, Steven (Chi Tse) Wu, Jared Akins, Werner Hort
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Patent number: 8030082Abstract: The invention includes a method of detecting impurities in a metal-containing article. A portion of metal material is removed from a metal article and is solubilized in an acid or base-comprising liquid to produce a liquid sample. The liquid sample is subjected to an incident laser beam and light scattered from the sample is detected. The invention includes a method of analyzing a physical vapor deposition target material. A portion of target material is removed from the target and is rinsed with an acid-comprising solution. The portion of target material is dissolved to produce a liquid sample. The sample is subjected to an incident laser beam and scatter of the laser beam is detected to determine the number of particles present in the sample within a particular size range.Type: GrantFiled: January 13, 2006Date of Patent: October 4, 2011Assignee: Honeywell International Inc.Inventors: Susan D. Strothers, Janine K. Kardokus, Brett M. Clark
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Publication number: 20090078570Abstract: Target/backing plate constructions and methods of forming target/backing plate constructions are disclosed herein. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of titanium, tantalum, titanium zirconium, hafnium, niobium, vanadium, tungsten, copper or a combination thereof. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.Type: ApplicationFiled: October 28, 2008Publication date: March 26, 2009Inventors: Wuwen Yi, Ravi Rastogi, Jaeyeon Kim, Brett Clark, Susan D. Storhers, Michael Pinter, Janine K. Kardokus
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Publication number: 20090065354Abstract: A sputtering target is described herein, which includes: a) a surface material, and b) a core material coupled to the surface material, wherein at least one of the surface material or the core material has less than 100 ppm defect volume. Methods for producing sputtering targets are described that include: a) providing at least one sputtering target material, b) melting the at least one sputtering target material to provide a molten material, c) degassing the molten material, d) pouring the molten material into a target mold. In some embodiments, pouring the molten material into a target mold comprises under-pouring or under-skimming the molten material from the crucible into the target mold. Sputtering targets and related apparatus formed by and utilizing these methods are also described herein. In addition, uses of these sputtering targets are described herein.Type: ApplicationFiled: September 12, 2007Publication date: March 12, 2009Inventors: Janine K. Kardokus, Susan D. Strothers, Brett Clark, Ira G. Nolander, Florence A. Baldwin, Jianxing Li
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Publication number: 20080110746Abstract: Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation.Type: ApplicationFiled: November 9, 2006Publication date: May 15, 2008Inventors: Janine K. Kardokus, Werner Hort, Susan D. Strothers, Christie J. Hausman, Kevin T. Hubert, Diana Morales, Michael D. Payton
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Publication number: 20080112878Abstract: A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.Type: ApplicationFiled: November 9, 2006Publication date: May 15, 2008Inventors: Janine K. Kardokus, Michael R. Pinter, Ravi Rastogi, Diana L. Morales, Michael D. Bayton, Norman L. Sand, Bryan E. Powers
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Patent number: 6858102Abstract: The invention includes a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.Type: GrantFiled: November 15, 2000Date of Patent: February 22, 2005Assignee: Honeywell International Inc.Inventors: Janine K. Kardokus, Chi tse Wu, Christopher L. Parfeniuk, Jane E. Buehler
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Patent number: 6849139Abstract: The invention includes a method of forming a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.Type: GrantFiled: December 19, 2001Date of Patent: February 1, 2005Assignee: Honeywell International Inc.Inventors: Janine K. Kardokus, Chi tse Wu, Christopher L. Parfeniuk, Jane E. Buehler
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Patent number: 6645427Abstract: Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.Type: GrantFiled: April 21, 2000Date of Patent: November 11, 2003Assignee: Honeywell International Inc.Inventors: Janine K. Kardokus, Chi tse Wu, Christopher L. Parfeniuk, Jane E. Buehler
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Patent number: 6555250Abstract: The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.Type: GrantFiled: May 12, 1999Date of Patent: April 29, 2003Assignee: Honeywell International Inc.Inventors: Ritesh P. Shah, David E. Steele, William R. Turner, Anthony F. Beier, Janine K. Kardokus, Susan D. Strothers
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Patent number: 6451185Abstract: Described is a method for producing a diffusion bonded sputtering target assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.Type: GrantFiled: July 9, 2001Date of Patent: September 17, 2002Assignee: Honeywell International Inc.Inventors: Anthony F. Beier, Janine K. Kardokus, Susan D. Strothers
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Publication number: 20020112791Abstract: Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.Type: ApplicationFiled: December 19, 2001Publication date: August 22, 2002Inventors: Janine K. Kardokus, Chi tse Wu, Christopher L. Parfeniuk, Jane E. Buehler
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Publication number: 20020003010Abstract: Described is a method of making a heat treated sputtering target and a sputtering target assembly with a prescripitation hardened backing plate diffusion hardened to a sputtering target.Type: ApplicationFiled: May 12, 1999Publication date: January 10, 2002Inventors: RITESH P. SHAH, DAVID E. STEELE, WILLIAM R. TURNER, ANTHONY F. BEIER, JANINE K. KARDOKUS, SUSAN D. STROTHERS
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Patent number: 6331234Abstract: Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.Type: GrantFiled: July 13, 2000Date of Patent: December 18, 2001Assignee: Honeywell International Inc.Inventors: Janine K. Kardokus, Chi tse Wu, Christopher L. Parfeniuk, Jane E. Buehler
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Publication number: 20010048019Abstract: Described is a method for producing a diffusion bonded sputtering target assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.Type: ApplicationFiled: July 9, 2001Publication date: December 6, 2001Inventors: Anthony F. Beier, Janine K. Kardokus, Susan D. Strothers
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Patent number: 6274015Abstract: Described is a method for producing a diffusion bonded sputtering assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.Type: GrantFiled: August 12, 1998Date of Patent: August 14, 2001Assignee: Honeywell International, Inc.Inventors: Anthony F. Beier, Janine K. Kardokus, Susan D. Strothers
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Patent number: 6113761Abstract: Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.Type: GrantFiled: June 2, 1999Date of Patent: September 5, 2000Assignee: Johnson Matthey Electronics, Inc.Inventors: Janine K. Kardokus, Chi tse Wu, Christopher L. Parfeniuk, Jane E. Buehler
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Patent number: 5863398Abstract: Described is a hot pressed and sintered sputtering target assembly formed of hot pressed and sintered metal powder diffusion bonded together and to a backing plate by use of an intermediate adhesion layer of titanium or titanium alloy.Type: GrantFiled: October 11, 1996Date of Patent: January 26, 1999Assignee: Johnson Matthey Electonics, Inc.Inventors: Janine K. Kardokus, Diana Morales
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Patent number: 5803342Abstract: Described is a method of making high purity copper sputtering target. The method avoids melting and casting and involves stacking segments of high purity copper plates, and heating, forging and annealing to produce a diffusion bonded unitary structure.Type: GrantFiled: December 26, 1996Date of Patent: September 8, 1998Assignee: Johnson Matthey Electronics, Inc.Inventor: Janine K. Kardokus
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Patent number: 5590389Abstract: A sputtering target comprising a body of metal such as aluminum and its alloy with an ultrafine grain size and small second phase. Also described is a method for making an ultra-fine grain sputtering target comprising melting, atomizing, and depositing atomized metal to form a workpiece, and fabricating the workpiece to form a sputtering target. A method is also disclosed that includes the steps of extruding a workpiece through a die having contiguous, transverse inlet and outlet channels of substantially identical cross section, and fabricating the extruded article into a sputtering target. The extrusion may be performed several times, producing grain size of still smaller size and controlled grain texture.Type: GrantFiled: December 23, 1994Date of Patent: December 31, 1996Assignee: Johnson Matthey Electronics, Inc.Inventors: John A. Dunlop, Jun Yuan, Janine K. Kardokus, Roger A. Emigh