Patents by Inventor Janne Kesala

Janne Kesala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7833352
    Abstract: The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.
    Type: Grant
    Filed: March 6, 2003
    Date of Patent: November 16, 2010
    Assignee: ASM International N.V.
    Inventors: Niklas Bondestam, Janne Kesälä, Leif Keto, Pekka T. Soininen
  • Publication number: 20060130524
    Abstract: Method and apparatus for producing glass products of predetermined shape. In the method, a perform is introduced into a furnace and heated to a temperature above the softening point of the glass. The heated portion is subjected to tensile forces and drawn from the furnace through an outlet opening. During processing, inert gas is fed into the furnace. According to the invention, the concentration of gaseous impurities in the furnace is maintained on the same level as in the inert gas fed into the oven. To prevent inflow of undesired gaseous components from the ambient air, a diffusion barrier is established by generating a barrier flow of inert gas in the inlet or outlet openings. This barrier flow has a direction of flow, which is opposite to the direction of the diffusion. The invention provides non-contacting sealing between the furnace and the preform while optimizing the consumption of protective gas. The invention also allows for simultaneous rotation of the preform.
    Type: Application
    Filed: December 5, 2003
    Publication date: June 22, 2006
    Inventors: Anssi Hovinen, Janne Kesala, Pekka Soininen
  • Publication number: 20040086642
    Abstract: The present invention concerns a method and an apparatus for feeding a gas phase reactant from a reactant source into a gas phase reaction chamber. In the method a reactant which is a liquid or solid at ambient temperature is vaporised from the reactant source at a vaporising temperature; and the vaporised reactant is fed into the reaction chamber. According to the invention the reactant source and the reaction chamber are located in separate vessels which can be individually evacuated. By means of the invention it becomes possible to change and load new reactant chemical without breaking the vacuum of the reaction chamber.
    Type: Application
    Filed: October 28, 2003
    Publication date: May 6, 2004
    Inventor: Janne Kesala
  • Patent number: 6699524
    Abstract: The present invention concerns a method and an apparatus for feeding a gas phase reactant from a reactant source into a gas phase reaction chamber. In the method a reactant which is a liquid or solid at ambient temperature is vaporized from the reactant source at a vaporizing temperature; and the vaporized reactant is fed into the reaction chamber. According to the invention the reactant source and the reaction chamber are located in separate vessels which can be individually evacuated. By means of the invention it becomes possible to change and load new reactant chemical without breaking the vacuum of the reaction chamber.
    Type: Grant
    Filed: May 14, 2001
    Date of Patent: March 2, 2004
    Assignee: ASM Microchemistry OY
    Inventor: Janne Kesälä
  • Publication number: 20030150385
    Abstract: The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infred channels (6) for feeding therein the reactants used in said thin-film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants'. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said'base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.
    Type: Application
    Filed: March 6, 2003
    Publication date: August 14, 2003
    Inventors: Niklas Bondestam, Janne Kesala, Leif Keto, Pekka T. Soininen
  • Patent number: 6579374
    Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.
    Type: Grant
    Filed: January 25, 2001
    Date of Patent: June 17, 2003
    Assignee: ASM Microchemistry Oy
    Inventors: Niklas Bondestam, Janne Kesälä, Leif Keto, Pekka T. Soininen
  • Patent number: 6562140
    Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.
    Type: Grant
    Filed: May 10, 2000
    Date of Patent: May 13, 2003
    Assignee: ASM Microchemistry Oy
    Inventors: Niklas Bondestam, Janne Kesälä, Leif Keto, Pekka T. Soininen
  • Publication number: 20010042523
    Abstract: The present invention concerns a method and an apparatus for feeding a gas phase reactant from a reactant source into a gas phase reaction chamber. In the method a reactant which is a liquid or solid at ambient temperature is vaporized from the reactant source at a vaporizing temperature; and the vaporized reactant is fed into the reaction chamber. According to the invention the reactant source and the reaction chamber are located in separate vessels which can be individually evacuated. By means of the invention it becomes possible to change and load new reactant chemical without breaking the vacuum of the reaction chamber.
    Type: Application
    Filed: May 14, 2001
    Publication date: November 22, 2001
    Inventor: Janne Kesala
  • Publication number: 20010009140
    Abstract: The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination.
    Type: Application
    Filed: January 25, 2001
    Publication date: July 26, 2001
    Inventors: Niklas Bondestam, Janne Kesala, Leif Keto, Pekka T. Soininen