Patents by Inventor Jason Van Horn

Jason Van Horn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
    Patent number: 10249493
    Abstract: A method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber, involves removing native oxide from a surface of the wafer; and then depositing an epitaxial layer with a thickness of at least 40 ?m on the surface of the wafer by introducing a silicon containing gas and a carrier gas into the process chamber, wherein the flow rate of the silicon containing gas is lower than 10 standard liters per minute and the flow rate of the carrier gas is at least 40 standard liters per minute.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: April 2, 2019
    Assignee: SILTRONIC AG
    Inventors: Wilhelmus Aarts, Jason Van Horn, Randal Gieker
  • METHOD FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER
    Publication number: 20170194137
    Abstract: A method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber, involves removing native oxide from a surface of the wafer; and then depositing an epitaxial layer with a thickness of at least 40 ?m on the surface of the wafer by introducing a silicon containing gas and a carrier gas into the process chamber, wherein the flow rate of the silicon containing gas is lower than 10 standard liters per minute and the flow rate of the carrier gas is at least 40 standard liters per minute.
    Type: Application
    Filed: December 30, 2015
    Publication date: July 6, 2017
    Inventors: Wilhelmus Aarts, Jason Van Horn, Randal Gieker