Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. A memory opening is formed through the alternating stack. An amorphous semiconductor material portion is formed at a bottom region of the memory opening. A memory film is formed in the memory opening. The memory film includes an opening at a bottom portion thereof, and a surface of the amorphous semiconductor material portion is physically exposed at a bottom of the opening in the memory film. An amorphous semiconductor channel material layer is formed on the exposed surface of the amorphous semiconductor material portion and over the memory film. A vertical semiconductor channel is formed by annealing the amorphous semiconductor material portion and the amorphous semiconductor channel material layer. The vertical semiconductor channel and contacts an entire top surface of an underlying semiconductor material portion.

Abstract: A methodology and structure for selectively erases a group of strings in a vertical NAND memory array to account for the slow to erase memory cells in the inner strands compared to the outer strands in the group. Erase signals can be applied through both the drain side connections and the source side connections in a first step to erase the outer strings. A second erase signal can be applied to the inner strands to erase the inner strands. The second signal can be applied from just the drain side connections or through both the drain side connections and the source side connections. In another embodiment, the erase signals are applied from both the source side connections and the drain side connections to the inner strings and only from the source side connections to the outer strings.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The electrically conductive layers include aluminum and silicon and provide low resistance electrically conductive paths as word lines of the three-dimensional memory device. The aluminum-based electrically conductive layers can provide low resistivity, low mechanical stress, and thermal stability for use as high performance word lines.

Abstract: A method of forming a semiconductor structure includes providing a dopant species selected from carbon, boron, nitrogen or oxygen into an upper portion of a semiconductor region to form a doped etch stop semiconductor material portion over a remaining semiconductor material portion, forming an overlying material portion over the etch stop semiconductor material portion, etching through the overlying material portion by an etch process that removes the overlying material portion selective to a material of the etch stop semiconductor material portion, and depositing at least one fill material over the etch stop semiconductor material portion.

Abstract: Strings of non-volatile memory cells include one or more joint regions adjacent to dummy non-volatile memory cells. During erase operations, different voltage levels are used for different dummy word lines coupled to respective dummy non-volatile memory cells. For example, a selection circuit may set a voltage level of a particular dummy word line to a voltage level greater than a different dummy word line. In another example, the selection circuit may determine a voltage level for a given dummy word line based on a distance between a non-volatile memory cell coupled to the given dummy word line and a selection device included in a string of non-volatile memory cells. Electron holes generated using the dummy word lines during erase operations may neutralize undesired trapped charges in a non-volatile memory string, thereby reducing disparity in erase times for different strings in the non-volatile memory circuit.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The electrically conductive layers include aluminum and silicon and provide low resistance electrically conductive paths as word lines of the three-dimensional memory device. The aluminum-based electrically conductive layers can provide low resistivity, low mechanical stress, and thermal stability for use as high performance word lines.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The electrically conductive layers include aluminum and silicon and provide low resistance electrically conductive paths as word lines of the three-dimensional memory device. The aluminum-based electrically conductive layers can provide low resistivity, low mechanical stress, and thermal stability for use as high performance word lines.

Abstract: Multiple tier structures including a respective alternating stack of insulating layers and electrically conductive layers is formed over a substrate. A memory opening fill structure extends through the alternating stacks, and includes a vertical semiconductor channel and a memory film. A support pillar structure extends through at least an upper alternating stack, and includes a dummy memory film and a dummy memory film. The support pillar structure may be narrower than the memory opening fill structure at a bottommost layer of the upper alternating stack. Additionally or alternatively, the dummy memory film may be located above a horizontal plane including a topmost surface of a lower alternating stack. Optionally, another support pillar structure including a dielectric material may be provided underneath the support pillar structure in the lower alternating stack.

Abstract: Multiple tier structures including a respective alternating stack of insulating layers and electrically conductive layers is formed over a substrate. A memory opening fill structure extends through the alternating stacks, and includes a vertical semiconductor channel and a memory film. A support pillar structure extends through at least an upper alternating stack, and includes a dummy memory film and a dummy memory film. The support pillar structure may be narrower than the memory opening fill structure at a bottommost layer of the upper alternating stack. Additionally or alternatively, the dummy memory film may be located above a horizontal plane including a topmost surface of a lower alternating stack. Optionally, another support pillar structure including a dielectric material may be provided underneath the support pillar structure in the lower alternating stack.

Abstract: Disclosed herein is a 3D memory with a select transistor, and method for fabricating the same. The select transistor may have a conductive floating gate, a conductive control gate, a first dielectric between the conductive floating gate and the conductive control gate, and a second dielectric between a body and the conductive floating gate. In one aspect, a uniform gate dielectric is formed using lateral epitaxial growth in a recess adjacent a crystalline semiconductor select transistor body, followed by forming the gate dielectric from the epitaxial growth. Techniques help to prevent, or at least reduce, a leakage current between the select transistor control gate and the select transistor body and/or the semiconductor substrate below the select transistor. Therefore, select transistors having a substantially uniform threshold voltage, on current, and S-factor are achieved. Also, select transistors have a high on-current and a steep sub-threshold slope.

Abstract: An alternating stack of insulating layers and spacer material layers is formed over a semiconductor substrate. Memory openings are formed through the alternating stack. An optional silicon-containing epitaxial pedestal and a memory film are formed in each memory opening. After forming an opening through a bottom portion of the memory film within each memory opening, a germanium-containing semiconductor layer and a dielectric layer is formed in each memory opening. Employing the memory film and the dielectric layer as a crucible, a liquid phase epitaxy anneal is performed to convert the germanium-containing semiconductor layer into a germanium-containing epitaxial channel layer. A dielectric core and a drain region can be formed over the dielectric layer. The germanium-containing epitaxial channel layer is single crystalline, and can provide a higher charge carrier mobility than a polysilicon channel.

Abstract: An opening is formed through at least one dielectric material layer. A first metallic liner is formed on a bottom surface and sidewalls of the opening by depositing a first metallic material. A metal portion including an elemental metal or an intermetallic alloy of at least two elemental metals is formed on the first metallic liner. A second metallic liner including a second metallic material is formed directly on a top surface of the metal portion. The first metallic material and the second metallic material differ in composition. The first metallic liner and the second metallic liner contact an entirety of all surfaces of the metal portion. The first and second metallic liners can protect the metal portion from a subsequently deposited dielectric material layer, which may be formed as an air-gap dielectric layer after recessing the at least one dielectric material layer.

Abstract: Die cracking of a three dimensional memory device may be reduced by adding offsets to backside contact via structures. Each backside contact via structure can include laterally extending portions that extend along a first horizontal direction adjoined by adjoining portions that extend along a horizontal direction other than the first horizontal direction. In order to preserve periodicity of memory stack structures extending through an alternating stack of insulating layers and electrically conductive layers, the distance between an outermost row of a string of memory stack structures between a pair of backside contact via structures and a most proximal backside contact via structure can vary from a laterally extending portion to another laterally extending portion within the most proximal backside contact via structure. Source shunt lines that are parallel to bit lines can be formed over a selected subset of offset portions of the backside contact via structures.

Abstract: Techniques are presented for the determination defects in non-volatile arrays, particularly those having a 3D or BiCS type of arrangement where NAND strings run in a vertical direction relative to the substrate. In such an arrangement, the NAND strings are formed along memory holes and connected to global bit lines, and are separated into blocks or sub-blocks by vertical local interconnects, such as for source lines, and connected to a corresponding global line. To determine defective blocks, a reference current is determined based on the amount of current drawn by the local interconnects when a high voltage is applied and all of the blocks are de-selected. The amount of leakage current is determined when a selected block is biased to ground and the high voltage is applied to the interconnects. By comparing the reference current to the leakage current, a determination can be made on whether the selected block has defects related to the local interconnect structure.

Abstract: Disclosed herein is a 3D memory with a select transistor, and method for fabricating the same. The select transistor may have a conductive floating gate, a conductive control gate, a first dielectric between the conductive floating gate and the conductive control gate, and a second dielectric between a body and the conductive floating gate. In one aspect, a uniform gate dielectric is formed using lateral epitaxial growth in a recess adjacent a crystalline semiconductor select transistor body, followed by forming the gate dielectric from the epitaxial growth. Techniques help to prevent, or at least reduce, a leakage current between the select transistor control gate and the select transistor body and/or the semiconductor substrate below the select transistor. Therefore, select transistors having a substantially uniform threshold voltage, on current, and S-factor are achieved. Also, select transistors have a high on-current and a steep sub-threshold slope.

Abstract: Memory openings and support openings can be formed through an alternating stack of insulating layers and sacrificial material layers. A set of dielectric layers and at least one semiconductor material layer can be sequentially deposited in each of the memory openings and the support openings. The at least one semiconductor material layer is removed from inside the support openings, while the at least one semiconductor material layer is not removed from inside the memory openings. Memory stack structures and support pillar structures are formed in the memory openings and the support openings, respectively. The sacrificial material layers are replaced with electrically conductive layers. Removal of the at least one semiconductor material layer from the support pillar structures reduces or eliminates leakage current through the support pillar structures.

Abstract: Systems and methods for improving performance of a non-volatile memory by utilizing one or more tier select gate transistors between different portions of a NAND string are described. A first memory string tier may comprise a first set of memory cell transistors that may be programmed to store a first set of data and a second memory string tier may comprise a second set of memory cell transistors that are arranged above the first set of transistors and that may be programmed to store a second set of data. Between the first set of memory cell transistors and the second set of memory cell transistors may comprise a tier select gate transistor in series with the first set of memory cell transistors and the second set of memory cell transistors. The tier select gate transistor may comprise a programmable transistor or a non-programmable transistor.

Abstract: Memory openings and support openings can be formed through an alternating stack of insulating layers and sacrificial material layers. A set of dielectric layers and at least one semiconductor material layer can be sequentially deposited in each of the memory openings and the support openings. The at least one semiconductor material layer is removed from inside the support openings, while the at least one semiconductor material layer is not removed from inside the memory openings. Memory stack structures and support pillar structures are formed in the memory openings and the support openings, respectively. The sacrificial material layers are replaced with electrically conductive layers. Removal of the at least one semiconductor material layer from the support pillar structures reduces or eliminates leakage current through the support pillar structures.

Abstract: Disclosed herein is a 3D memory with a select transistor, and method for fabricating the same. The select transistor may have a conductive floating gate, a conductive control gate, a first dielectric between the conductive floating gate and the conductive control gate, and a second dielectric between a body and the conductive floating gate. In one aspect, a uniform gate dielectric is formed using lateral epitaxial growth in a recess adjacent a crystalline semiconductor select transistor body, followed by forming the gate dielectric from the epitaxial growth. Techniques help to prevent, or at least reduce, a leakage current between the select transistor control gate and the select transistor body and/or the semiconductor substrate below the select transistor. Therefore, select transistors having a substantially uniform threshold voltage, on current, and S-factor are achieved. Also, select transistors have a high on-current and a steep sub-threshold slope.

Abstract: A cylindrical confinement electron gas confined within a two-dimensional cylindrical region can be formed in a vertical semiconductor channel extending through a plurality of electrically conductive layers comprising control gate electrodes. A memory film in a memory opening is interposed between the vertical semiconductor channel and the electrically conductive layers. The vertical semiconductor channel includes a wider band gap semiconductor material and a narrow band gap semiconductor material. The cylindrical confinement electron gas is formed at an interface between the wider band gap semiconductor material and the narrow band gap semiconductor material. As a two-dimensional electron gas, the cylindrical confinement electron gas can provide high charge carrier mobility for the vertical semiconductor channel, which can be advantageously employed to provide higher performance for a three-dimensional memory device.