Patents by Inventor Jean-Christopher Favreau

Jean-Christopher Favreau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing uniform tungsten layers by CVD
    Patent number: 6066366
    Abstract: Within wafer and wafer-to-wafer uniformity of W layers deposited by CVD, employing N.sub.2 for increased reflectivity, is significantly improved by omitting N.sub.2 during at least a portion of deposition. Embodiments include depositing a W nucleation layer on a TiN layer employing gaseous WF.sub.6 during a nucleation phase, omitting WF.sub.6 during an interposition phase during which substantially no W deposition occurs, depositing a W layer employing gaseous WF.sub.6 during a main deposition phase, flowing N.sub.2 gas at least during the terminal portion of the main deposition phase and omitting N.sub.2 gas during at least a portion of the nucleation phase and/or interposition phase, e.g., omitting N.sub.2 gas during the entire interdeposition phase.
    Type: Grant
    Filed: July 22, 1998
    Date of Patent: May 23, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Daniel Berenbaum, David A. Duke, Herald Hauf, Richard Petri, Jean-Christopher Favreau