Patents by Inventor Jean-Michel Caruge

Jean-Michel Caruge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11158308
    Abstract: Example embodiments provide techniques for configuring a natural language processing (NLU) system for new functionalities using sample user inputs provided by a developer. The system may determine intent labels associated with the sample user inputs using previous user inputs previously processed by the NLU system. The system may configure a new NLU model, using the NLU model associated with the intent label determined by the system, where the new NLU model is configured to enable invocation of the new functionality.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: October 26, 2021
    Assignee: Amazon Technologies, Inc.
    Inventors: Anthony Bissell, Pragati Verma, Skye Loren Huerta, Akhil Chandrashekhar Acharya, Susanna Rose Young, Jean-Michel Caruge, Christopher Wheeler
  • Patent number: 10014438
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: July 3, 2018
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Publication number: 20170125635
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: January 18, 2017
    Publication date: May 4, 2017
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Patent number: 9550614
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: January 24, 2017
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Patent number: 8536776
    Abstract: A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: September 17, 2013
    Assignee: Massachusetts Institute of Technology
    Inventors: Vanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
  • Publication number: 20120292595
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: June 1, 2012
    Publication date: November 22, 2012
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan E. Halpert, Alexi Arango
  • Publication number: 20120238047
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 20, 2012
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
  • Patent number: 8232722
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Grant
    Filed: February 15, 2006
    Date of Patent: July 31, 2012
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi G. Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Alexi Arango, Jonathan E. Halpert
  • Publication number: 20110080090
    Abstract: A light emitting device including semiconductor nanocrystals can have a unipolar construction. The semiconductor nanocrystals emit light during device operation. The size and chemical composition of the semiconductor nanocrystals can be chosen to provide desired emission characteristics. Devices that share a substrate and emit more than one color may be conveniently made.
    Type: Application
    Filed: May 7, 2010
    Publication date: April 7, 2011
    Applicant: Massachusetts Institute of Technology
    Inventors: Vanessa Wood, Matthew J. Panzer, Jean-Michel Caruge, Jonathan E. Halpert, Moungi G. Bawendi, Vladimir Bulovic
  • Publication number: 20070103068
    Abstract: A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
    Type: Application
    Filed: February 15, 2006
    Publication date: May 10, 2007
    Inventors: Moungi Bawendi, Vladimir Bulovic, Seth Coe-Sullivan, Jean-Michel Caruge, Jonathan Steckel, Jonathan Halpert