Abstract: Polarimetric transceiver front-ends and polarimetric phased array transceivers include two receive paths configured to receive signals from an antenna, each including a respective variable phase shifter. A first transmit path is connected to the variable phase shifter of one of the two receive paths and is configured to send signals to the antenna. A transmit/receive switch is configured to select between the first transmit path and the two receive paths for signals. The transmit/receive switch has an element that adds a high impedance to the transmit path when the transmit/receive switch is in a receiving state.

Abstract: Polarimetric transceiver front-ends and polarimetric phased array transceivers include two receive paths configured to receive signals from an antenna, each including a respective variable phase shifter. A first transmit path is connected to the variable phase shifter of one of the two receive paths and is configured to send signals to the antenna. A transmit/receive switch is configured to select between the first transmit path and the two receive paths for signals. The transmit/receive switch has an element that adds a high impedance to the transmit path when the transmit/receive switch is in a receiving state.

Abstract: After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

Abstract: A polarimetric transceiver front-end includes two receive paths configured to receive signals from an antenna, each receive path corresponding to a respective polarization. Each front-end includes a variable amplifier and a variable phase shifter; a first transmit path configured to send signals to the antenna, where the transmit path is connected to the variable phase shifter of one of the two receive paths and includes a variable amplifier; and a transmit/receive switch configured to select between the first transmit path and the two receive paths for signals, where the transmit/receive switch includes a quarter-wavelength transmission line that adds a high impedance to the transmit path when the transmit/receive switch is in a receiving state.

Abstract: After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

Abstract: After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

Abstract: An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects.

Abstract: After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

Abstract: An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects.

Abstract: After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

Abstract: After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.

Abstract: An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities.

Abstract: A polarimetric transceiver front-end includes two receive paths configured to receive signals from an antenna, each receive path corresponding to a respective polarization. Each front-end includes a variable amplifier and a variable phase shifter; a first transmit path configured to send signals to the antenna, where the transmit path is connected to the variable phase shifter of one of the two receive paths and includes a variable amplifier; and a transmit/receive switch configured to select between the first transmit path and the two receive paths for signals, where the transmit/receive switch includes a quarter-wavelength transmission line that adds a high impedance to the transmit path when the transmit/receive switch is in a receiving state.

Abstract: A polarimetric transceiver front-end includes two receive paths configured to receive signals from an antenna, each receive path corresponding to a respective polarization. Each front-end includes a variable amplifier and a variable phase shifter; a first transmit path configured to send signals to the antenna, where the transmit path is connected to the variable phase shifter of one of the two receive paths and includes a variable amplifier; and a transmit/receive switch configured to select between the first transmit path and the two receive paths for signals, where the transmit/receive switch includes a quarter-wavelength transmission line that adds a high impedance to the transmit path when the transmit/receive switch is in a receiving state.

Abstract: A system, method, service and mobile device are disclosed for providing a location of the mobile device. The invention utilizes a mobile phone with a global positioning system (GPS) module which is located in a wireless network. A third party device is able to submit a location query to a mobile telephone service operator (MTSO). This location query includes the mobile phone's telephone number. Using the telephone number, the MTSO determines the base station with which the mobile phone is associated. The location query is then forwarded to the mobile phone via the base station. The mobile phone collects the GPS data from the GPS module and forwards the GPS data to the base station. The base station converts the GPS data to location information and forwards the location information to the third party device via the MTSO.

Abstract: There is provided a tank based oscillator. The oscillator includes one or more active devices, one or more passive devices, and a tank circuit decoupled from the active devices using at least one of the one or more passive devices. A coupling ratio between the tank circuit and the one or more active devices is set such that a maximum value of an oscillation amplitude of the tank circuit is limited based upon a breakdown of only the one or more passive devices.

Abstract: A polarimetric transceiver front-end includes two receive paths configured to receive signals from an antenna, each receive path corresponding to a respective polarization. Each front-end includes a variable amplifier and a variable phase shifter; a first transmit path configured to send signals to the antenna, where the transmit path is connected to the variable phase shifter of one of the two receive paths and includes a variable amplifier; and a transmit/receive switch configured to select between the first transmit path and the two receive paths for signals, where the transmit/receive switch includes a quarter-wavelength transmission line that adds a high impedance to the transmit path when the transmit/receive switch is in a receiving state.

Abstract: The present disclosure relates to a secure device having a physical unclonable function and methods of manufacturing such a secure device. The device includes a substrate and at least one high-k/metal gate device formed on the substrate. The at least one high-k/metal gate device represents the physical unclonable function. In some cases, the at least one high-k/metal gate device may be subjected a variability enhancement. In some cases, the secure device may include a measurement circuit for measuring a property of the at least one high-k/metal gate device.

Abstract: The present disclosure relates to a secure device having a physical unclonable function and methods of manufacturing such a secure device. The device includes a substrate and at least one high-k/metal gate device formed on the substrate. The at least one high-k/metal gate device represents the physical unclonable function. In some cases, the at least one high-k/metal gate device may be subjected a variability enhancement. In some cases, the secure device may include a measurement circuit for measuring a property of the at least one high-k/metal gate device.

Abstract: There is provided a tank based oscillator. The oscillator includes one or more active devices, one or more passive devices, and a tank circuit decoupled from the active devices using at least one of the one or more passive devices. A coupling ratio between the tank circuit and the one or more active devices is set such that a maximum value of an oscillation amplitude of the tank circuit is limited based upon a breakdown of only the one or more passive devices.