Abstract: A flash E.sup.2 PROM cell having source and drain regions disposed in a substrate, a channel region intermediate to the source and drain regions, a tunnel dielectric layer overlying the channel region, a floating gate overlying the tunnel dielectric layer, an inter-poly dielectric layer overlying the floating gate, and a control gate overlying the inter-poly dielectric layer. The flash E.sup.2 PROM cell further having a highly doped p.sup.+ pocket implant covering a portion of the cell width and adjacent to at least one of the drain and source regions. The flash E.sup.2 PROM cell is comprised of two sections butted together. The portion (width-wise) that is covered by the highly doped p.sup.+ pocket implant is referred to as a program section. The remaining portion (width-wise) not covered by the highly doped p.sup.+ pocket implant resembles a conventional flash E.sup.2 PROM cell and is referred to as a sense section. The highly doped p.sup.+ pocket implant and the n.sup.