Abstract: Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.

Abstract: Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.

Abstract: An apparatus is described to hold a liquid container on a horizontal support surface to reduce the risk of the container being knocked over. The apparatus is generally comprised of a container support that defines a container receiving socket, and a support surface engaging base part that is spaced outwardly of the container receiving socket and at least partially circumscribes the container support. Exemplary forms of the support surface can include a container receiving sleeve that is integrated with a formed base, upstanding container engaging members that are spaced about a flat base, flexible fingers that are integral with the base part, and a set of foldable tabs that can be folded upwardly from a flat base part.

Abstract: Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.

Abstract: Embodied in a reflectance system capable of providing high resolution, repeatable, efficient, and accurate reflectance measurements of a silicon or silicon-oxide wafer at all wavelengths, the present invention, including an inventive and useful software tool with user interface, provides a solution to monitor non-destructively low dose ion implantation without potentially suffering from undesirable annealing effect. The computer-implemented method disclosed herein determines a reflectance change index that correlates to the ion dose. The reflectance change index is determined based on an absolute value of reflectance changes over the entire measured spectra. The reflectance changes are determined based on non-implanted and implanted reflectance measurements of the wafer respectively obtained at each of the wavelengths.

Abstract: Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.

Abstract: Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.

Abstract: A sports goal comprised of a frame formed by a base and an upright portion. The upright portion is pivotally connected to the base and extends upwardly therefrom. The base has parallel legs with a cross member positioned therebetween. The parallel legs of the base are releasably secured to the cross member of the base. The upright portion has parallel legs with a cross member positioned therebetween. The parallel legs of the upright portion are releasably secured to the cross member of the upright portion. The upright portion is pivoted onto the base member and the base legs and upright legs are disengaged from each respective cross member and folded towards the cross members to collapse the sports goal for storage.

Abstract: Embodied in a reflectance system capable of providing high resolution, repeatable, efficient, and accurate reflectance measurements of a silicon or silicon-oxide wafer at all wavelengths, the present invention, including an inventive and useful software tool with user interface, provides a solution to monitor non-destructively low dose ion implantation without potentially suffering from undesirable annealing effect. The computer-implemented method disclosed herein determines a reflectance change index that correlates to the ion dose. The reflectance change index is determined based on an absolute value of reflectance changes over the entire measured spectra. The reflectance changes are determined based on non-implanted and implanted reflectance measurements of the wafer respectively obtained at each of the wavelengths.

Abstract: Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.

Abstract: A system and a method for attaining a selectable image sequence are provided. The system includes a viewer display component configured to transmit a request from a user's interface component for the selectable image sequence. The request obtains a handle which corresponds to the selectable image sequence, a display description in which the handle is embedded and a reply response containing the handle that corresponds to the selectable image. The viewer display component is also configured to receive the reply response and to render the selectable image sequence on a display screen of the user's interface component.

Abstract: Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.

Abstract: The present invention comprises an apparatus, system and method for delivering rich-media advertising for the Internet including viewer tracking, online sales interface and integration with the advertiser/retailer. The rich-media advertising of the invention includes full stereo audio, video and animation capabilities. The viewer tracking of the invention includes demographics of the viewer, geographic location, timing and viewer habits. The online sales interface of the invention includes options to buy online, options to leave the host website, options to print promotional offers, mapping tools and options to view other advertiser's promotional offers with search capability.

Abstract: A mobile enclosure unit for containment of contaminants has a vertical, wheeled frame assembly having an open upper end and a lower wall. The frame assembly is adjustable in height so that the open upper end can be positioned in contact with a ceiling, allowing access for workers to work on or in the ceiling. A pliable cover sleeve surrounds the frame assembly from the upper end to the lower wall to form a chamber within the frame assembly having an open upper end to allow a worker in the chamber to access the ceiling area above the open end of the unit. An exhaust system is mounted in the frame inside the sleeve for drawing in air from the chamber, filtering debris from the air, and exhausting filtered air from the chamber.

Abstract: An in-line skate braking system for braking of an individual on in-line skates by transferring the center of gravity about the rear roller to frictionally engage a brake pad of one in-line skate or both in-line skates against the ground. The brake pad is of a suitable material, such as rubber, so as to frictionally engage with the ground surface. The degree of braking is determined by the degree of pressure axially transferred about the rear roller by the center of gravity to the brake pad. By the skater properly shifting his or her weight about the rear roller, maximum force can be applied between the brake pad to the ground surface, causing a safe stop over a finite distance.

Abstract: A device for aligning rail ends for welding of the abutting rail ends comprises a pair of clamping members which extend across from the rail to be welded to the adjacent continuous portion of rail including a telescopic member which can be expanded to abut plates at the ends thereof with the web of the rail and clamping members which extend over and around the rail to clamp the other side of the web. A jacking screw acts to lock the telescopic member in the required gauge spacing and also to jack the clamping member upwardly to locate the rail end at the required elevation.