Patents by Inventor Jeffery Bielefeld

Jeffery Bielefeld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210098387
    Abstract: Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.
    Type: Application
    Filed: September 27, 2019
    Publication date: April 1, 2021
    Applicant: Intel Corporation
    Inventors: Carl Naylor, Mauro Kobrinsky, Richard Vreeland, Ramanan Chebiam, William Brezinski, Brennen Mueller, Jeffery Bielefeld
  • Publication number: 20210098360
    Abstract: An integrated circuit interconnect structure includes a first interconnect in a first metallization level and a first dielectric adjacent to at least a portion of the first interconnect, where the first dielectric having a first carbon content. The integrated circuit interconnect structure further includes a second interconnect in a second metallization level above the first metallization level. The second interconnect includes a lowermost surface in contact with at least a portion of an uppermost surface of the first interconnect. A second dielectric having a second carbon content is adjacent to at least a portion of the second interconnect and the first dielectric. The first carbon concentration increases with distance away from the lowermost surface of the second interconnect and the second carbon concentration increases with distance away from the uppermost surface of the first interconnect.
    Type: Application
    Filed: September 27, 2019
    Publication date: April 1, 2021
    Applicant: Intel Corporation
    Inventors: Manish Chandhok, Ramanan Chebiam, Brennen Mueller, Colin Carver, Jeffery Bielefeld, Nafees Kabir, Richard Vreeland, William Brezinski
  • Publication number: 20200258778
    Abstract: In some embodiments, a semiconductor device structure is formed by using an angled etch to remove material so as to expose a portion of an adjacent conductor. The space formed upon removing the material can then be filled with a conductive material during formation of a contact or other conductive structure (e.g., and interconnection). In this way, the contact formation also fills the space to form an angled local interconnect portion that connects adjacent structures (e.g., a source/drain contact to an adjacent source/drain contact, a source/drain contact to an adjacent gate contact, a source/drain contact to an adjacent device level conductor also connected to a gate/source/drain contact). In other embodiments, an interconnection structure herein termed a “jogged via” establishes and electrical connection from laterally adjacent peripheral surfaces of conductive structures that are not coaxially or concentrically aligned with one another.
    Type: Application
    Filed: February 13, 2019
    Publication date: August 13, 2020
    Applicant: INTEL CORPORATION
    Inventors: Aaron D. Lilak, Ehren Mannebach, Anh Phan, Richard Schenker, Stephanie A. Bojarski, Willy Rachmady, Patrick Morrow, Jeffery Bielefeld, Gilbert Dewey, Hui Jae Yoo, Nafees Kabir
  • Publication number: 20060105581
    Abstract: A method for forming a carbon doped oxide (CDO) film comprises doping an organosilane precursor material with a glycol material and using the doped organosilane precursor material in a deposition process to form the CDO film. The glycol material may be propylene glycol (PD). The PD-doped CDO films formed using the methods of the invention have been shown to have an increase in strength (e.g., an increase in Young's modulus) with a minimal effect on the dielectric constant of the PD-doped CDO film.
    Type: Application
    Filed: November 18, 2004
    Publication date: May 18, 2006
    Inventors: Jeffery Bielefeld, George Antonelli, Kevin Peterson