Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.

Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.

Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.

Abstract: Apparatuses for annealing semiconductor substrates, such as a batch processing chamber, are provided herein. The batch processing chamber includes a chamber body enclosing an internal volume, a cassette moveably disposed within the internal volume and a plug coupled to a bottom wall of the cassette. The chamber body has a hole through a bottom wall of the chamber body and is interfaced with one or more heaters operable to maintain the chamber body at a temperature of greater than 290° C. The cassette is configured to be raised to load a plurality of substrates thereon and lowered to seal the internal volume. The plug is configured to move up and down within the internal volume. The plug includes a downward-facing seal configured to engage with a top surface of the bottom wall of the chamber body and close the hole through the bottom wall of the chamber body.

Abstract: Embodiments of the present disclosure generally relate to lift pin holders, lift pin holder assemblies, and substrate supports containing the lift pin holder and/or the lift pin holder assembly. In one or more embodiments, a lift pin holder contains a cap having a first outside diameter, a base coupled to the cap where the base has a second outside diameter, a first bore formed axially through the cap and the base where the first bore has a sidewall, and a plurality of second bores extending from the sidewall of the first bore to an outer surface of the base where a spring-loaded member is disposed within each of the second bores.

Abstract: Embodiments described herein generally relate to process chambers with coaxial lift devices. In some embodiments, the device comprises both a bottom bowl lift and a pedestal lift. The bottom bowl lift supports a bottom bowl and is configured to move the bottom bowl into a position that reduces the process volume. The bottom bowl lift is co-axial with the pedestal lift and the bottom bowl lift and the pedestal lift are attached for vacuum operation. The pedestal lift includes multiple actuators to create a dynamic lift mechanism. Both systems complete a nested system such that the bottom bowl lift is adjustable and can close the bottom bowl creating a symmetric and small process volume. The pedestal lift can move independently to its process position and tilt in a desired direction without interference with the bottom bowl lift, increasing film uniformity on a processed substrate.

Abstract: Apparatuses for annealing semiconductor substrates, such as a batch processing chamber, are provided herein. The batch processing chamber includes a chamber body enclosing an internal volume, a cassette moveably disposed within the internal volume and a plug coupled to a bottom wall of the cassette. The chamber body has a hole through a bottom wall of the chamber body and is interfaced with one or more heaters operable to maintain the chamber body at a temperature of greater than 290° C. The cassette is configured to be raised to load a plurality of substrates thereon and lowered to seal the internal volume. The plug is configured to move up and down within the internal volume. The plug includes a downward-facing seal configured to engage with a top surface of the bottom wall of the chamber body and close the hole through the bottom wall of the chamber body.

Abstract: An ion implantation apparatus including an enclosure defining a process chamber, a carriage slidably mounted on a shaft within the process chamber and coupled to a drive mechanism adapted to selectively move the carriage along the shaft. A platen assembly can be coupled to the carriage, and a linkage conduit can extend between a side wall of the enclosure and the carriage. The linkage conduit can include a plurality of pivotably interconnected linkage members that define a contiguous internal volume that is sealed from the process chamber. The contiguous volume can be held at a desired vacuum pressure separate from the vacuum environment of the process chamber.

Abstract: An ion implantation apparatus including an enclosure defining a process chamber, a carriage slidably mounted on a shaft within the process chamber and coupled to a drive mechanism adapted to selectively move the carriage along the shaft. A platen assembly can be coupled to the carriage, and a linkage conduit can extend between a side wall of the enclosure and the carriage. The linkage conduit can include a plurality of pivotably interconnected linkage members that define a contiguous internal volume that is sealed from the process chamber. The contiguous volume can be held at a desired vacuum pressure separate from the vacuum environment of the process chamber.

Abstract: An apparatus for dynamically adjusting the pitch between substrates in a substrate stack comprises first and second lift portions. The first lift portion supports a first group of the plurality of substrates, and the second lift portion supports a second group of the plurality of substrates. The first and second lift portions are operable to move the first and second groups of substrates in a first direction independently from each other. This independent movement enables the pitch, or spacing, between adjacent substrates to be dynamically adjusted so that an end effector of a robot can be positioned between such adjacent substrates to pick one of the substrates without inadvertently engaging another substrate that is not being picked. Other embodiments are disclosed.

Abstract: An apparatus for dynamically adjusting the pitch between substrates in a substrate stack comprises first and second lift portions. The first lift portion supports a first group of the plurality of substrates, and the second lift portion supports a second group of the plurality of substrates. The first and second lift portions are operable to move the first and second groups of substrates in a first direction independently from each other. This independent movement enables the pitch, or spacing, between adjacent substrates to be dynamically adjusted so that an end effector of a robot can be positioned between such adjacent substrates to pick one of the substrates without inadvertently engaging another substrate that is not being picked. Other embodiments are disclosed.

Abstract: An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.