Patents by Inventor Jeffrey Donald Gelorme

Jeffrey Donald Gelorme has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190189469
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Applicant: International Business Machines Corporation
    Inventors: Paul S. ANDRY, Bing DANG, Jeffrey Donald GELORME, Li-Wen HUNG, John U. KNICKERBOCKER, Cornelia Tsang YANG
  • Patent number: 10325785
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: June 18, 2019
    Assignee: International Business Machines Corporation
    Inventors: Paul S. Andry, Bing Dang, Jeffrey Donald Gelorme, Li-Wen Hung, John U. Knickerbocker, Cornelia Tsang Yang
  • Patent number: 10224219
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: March 5, 2019
    Assignee: International Business Machines Corporation
    Inventors: Paul S. Andry, Bing Dang, Jeffrey Donald Gelorme, Li-Wen Hung, John U. Knickerbocker, Cornelia Tsang Yang
  • Publication number: 20180218934
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Application
    Filed: March 26, 2018
    Publication date: August 2, 2018
    Inventors: Paul S. ANDRY, Bing DANG, Jeffrey Donald GELORME, Li-Wen HUNG, John U. KNICKERBOCKER, Cornelia Tsang YANG
  • Publication number: 20180138073
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Application
    Filed: December 27, 2017
    Publication date: May 17, 2018
    Inventors: Paul S. ANDRY, Bing DANG, Jeffrey Donald GELORME, Li-Wen HUNG, John U. KNICKERBOCKER, Cornelia Tsang YANG
  • Publication number: 20180138072
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Application
    Filed: December 27, 2017
    Publication date: May 17, 2018
    Inventors: Paul S. ANDRY, Bing DANG, Jeffrey Donald GELORME, Li-Wen HUNG, John U. KNICKERBOCKER, Cornelia Tsang YANG
  • Patent number: 9947570
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: April 17, 2018
    Assignee: International Business Machines Corporation
    Inventors: Paul S. Andry, Bing Dang, Jeffrey Donald Gelorme, Li-Wen Hung, John U. Knickerbocker, Cornelia Tsang Yang
  • Publication number: 20180076113
    Abstract: Devices that have integrated cooling structures for two-phase cooling and methods of assembly thereof are provided. In one example, a chip manifold can be affixed to a chip. An interface can be located at a first position between the chip manifold and the manifold cap. Furthermore, the interface can create a seal.
    Type: Application
    Filed: September 15, 2016
    Publication date: March 15, 2018
    Inventors: Thomas J. Brunschwiler, Timothy Joseph Chainer, Evan George Colgan, Michael Anthony Gaynes, Jeffrey Donald Gelorme, Gerard McVicker, Ozgur Ozsun, Pritish Ranjan Parida, Mark Delorman Schultz, Bucknell C. Webb
  • Publication number: 20170194185
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Application
    Filed: December 30, 2015
    Publication date: July 6, 2017
    Inventors: Paul S. ANDRY, Bing DANG, Jeffrey Donald GELORME, Li-Wen HUNG, John U. KNICKERBOCKER, Cornelia Tsang YANG
  • Publication number: 20170194186
    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
    Type: Application
    Filed: March 29, 2016
    Publication date: July 6, 2017
    Inventors: Paul S. ANDRY, Bing DANG, Jeffrey Donald GELORME, Li-Wen HUNG, John U. KNICKERBOCKER, Cornelia Tsang YANG
  • Publication number: 20100212944
    Abstract: The present invention is directed to silane coupling agents for printed circuit boards, such as high-temperature printed circuit boards (PCBs), a process for synthesizing the silane coupling agent, and PCBs with such coupling agents. The silane coupling agent is defined by the following formula: wherein at least one R? is an allyl and the other one is hydrogen, an alkyl, a cycloalkyl, an aryl, a heteroaryl, a non-aromatic heterocyclic ring, or an allyl; and R1 is an alkyl, a cycloalkyl, an aryl, a heteroaryl, a non-aromatic heterocyclic ring, or an allyl.
    Type: Application
    Filed: January 26, 2010
    Publication date: August 26, 2010
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeffrey Donald Gelorme, Joseph Kuczynski
  • Patent number: 7467742
    Abstract: Electrically conducting adhesives having a broader selectable range of properties are provided by having random sizes of micrometer diameter range particles coated with a low melting temperature metal. The coated particles are suspended in a vehicle of a mixture of thermosetting resins together with a flux resin selected for viscosity and low shrinkage, for screen printability, for electrical and for mechanical properties over a broad range of specification conditions. The vehicle or resin system includes thermosetting cyclo-aliphatic epoxy, thermosetting phenoxy polymer and thermosetting mono-functional limonene oxide. The low temperature melting coating system for the particles includes In, Sn, and alloys such as In—Sn, Sn—Pb, Bi—Sn—In and InAg. The micrometer diameter range particles includes Cu, Ni, Co, Ag, Pd, Pt, polymer and ceramic.
    Type: Grant
    Filed: February 24, 2000
    Date of Patent: December 23, 2008
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey Donald Gelorme, Sung Kwon Kang, Konstantinos Papathomas, Sampath Purushothaman
  • Patent number: 7166241
    Abstract: Disclosed is a novel composition of matter comprising a polyacid and a polymer containing repeating units which contain one or more basic atoms. The complex is water-soluble and electrically conductive. The complex is useful in providing organic discharge layers for use in electronic applications and fabrications.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: January 23, 2007
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Jeffrey Donald Gelorme, Thomas Harold Newman, Niranjan Mohanlal Patel, David Earle Seeger
  • Patent number: 7037638
    Abstract: A high sensitivity, organic solvent developable, high resolution photoresist composition for use in E-beam lithography is disclosed. The composition of the present invention comprises a high sensitivity, soluble, film forming photoresist composition of dendrimeric calix [4]arene derivatives and processes for forming lithographic patterns with a crosslinker selected from glycoluril derivatives capable of reacting with these dendrimer under acid catalysis, a photoacid generator and an organic solvent. The composition of the present invention is particularly useful for production of negative tone images of high resolution (less than 100 nanometers).
    Type: Grant
    Filed: October 10, 2000
    Date of Patent: May 2, 2006
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Tricia Lynn Breen, Jeffrey Donald Gelorme, David Brian Mitzi, Michael Joseph Rooks
  • Patent number: 7026643
    Abstract: The invention provides a device comprising an improved n-channel semiconducting film. This film consists of a perylene tetracaboxylic acid diimide compound and was deposited onto substrates by vacuum sublimation. Thin film transistor devices comprising such films as the semiconducting channel exhibit a field effect electron mobility greater than 0.01 cm2/Vs and an on/off ratio of 10000 and higher.
    Type: Grant
    Filed: December 11, 2001
    Date of Patent: April 11, 2006
    Assignee: International Business Machines Corporation
    Inventors: Christos Dimitrios Dimitrakopoulos, Jeffrey Donald Gelorme, Teresita Ordonez Graham, Laura Louise Kosbar, Patrick Roland Lucien Malenfant
  • Patent number: 6830708
    Abstract: Disclosed is a novel composition of matter comprising a polyacid and a polymer containing repeating units which contain one or more basic atoms. The complex is water-soluble and electrically conductive. The complex is useful in providing organic discharge layers for use in electronic applications and fabrications.
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: December 14, 2004
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Jeffrey Donald Gelorme, Thomas Harold Newman, Niranjan Mohanlal Patel, David Earle Seeger
  • Patent number: 6746770
    Abstract: Electrically conductive and abrasion resistant polymeric compositions, methods of fabrication thereof and uses thereof are described. Admixtures of abrasion resistant materials and electrically conductive polymeric materials are formed. Many of these admixtures arc light transmitting and can be used as an abrasion resistant light transmitting electrostatic discharge layers. The light transmitting discharge layer is useful as a surface coating for visual displays such as CRT screens to avoid electrostatic accumulation of dust and scratching.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: June 8, 2004
    Assignee: Internatonal Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Marie Angelopoulos, Jack Alvin Dickerson, Thomas Baird Pillsbury, Karl Joseph Puttlitz, Jane Margaret Shaw, Jeffrey Donald Gelorme
  • Publication number: 20020164835
    Abstract: The invention provides a device comprising an improved n-channel semiconducting film. This film consists of a perylene tetracaboxylic acid diimide compound and was deposited onto substrates by vacuum sublimation. Thin film transistor devices comprising such films as the semiconducting channel exhibit a field effect electron mobility greater than 0.01 cm2/Vs and an on/off ratio of 10000 and higher.
    Type: Application
    Filed: December 11, 2001
    Publication date: November 7, 2002
    Inventors: Christos Dimitrios Dimitrakopoulos, Jeffrey Donald Gelorme, Teresita Ordonez Graham, Laura Louise Kosbar, Partick Roland Lucien Malenfant
  • Publication number: 20020014617
    Abstract: Disclosed is a novel composition of matter comprising a polyacid and a polymer containing repeating units which contain one or more basic atoms. The complex is water-soluble and electrically conductive. The complex is useful in providing organic discharge layers for use in electronic applications and fabrications.
    Type: Application
    Filed: August 2, 2001
    Publication date: February 7, 2002
    Inventors: Marie Angelopoulos, Jeffrey Donald Gelorme, Thomas Harold Newman, Niranjan Mohanlal Patel, David Earle Seeger
  • Patent number: 6339116
    Abstract: Biobased cross-linked compositions, methods of fabrication and structures, in particular biobased printed wiring boards using the compositions and methods of making the structures are described. Biobased materials such as lignin, crop oils, wood resins, tannins, and polysaccharides and combinations thereof are cross-linked, preferably using heat, a cross-linking agent, and an initiator. The materials fabricated have suitable properties for printed wiring boards which are made by impregnating a fiberglass or biobased cloth with an admixture of the biobased material, cross-linking agent and initiator which is processed by conventional methods to produce a printed wiring board.
    Type: Grant
    Filed: December 19, 1996
    Date of Patent: January 15, 2002
    Assignee: International Business Machines Corporation
    Inventors: Ali Afzali-Ardakani, Jeffrey Donald Gelorme, Laura Louise Kosbar