Patents by Inventor Jeffrey J. Carapella

Jeffrey J. Carapella has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9484480
    Abstract: High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: November 1, 2016
    Assignee: Alliance For Sustainable Energy, LLC
    Inventors: Mark W Wanlass, Jeffrey J Carapella, Myles A Steiner
  • Patent number: 9293615
    Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: March 22, 2016
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Mark W. Wanlass, Jeffrey J. Carapella
  • Publication number: 20160056317
    Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
    Type: Application
    Filed: September 16, 2015
    Publication date: February 25, 2016
    Inventors: Mark W. WANLASS, Jeffrey J. CARAPELLA
  • Patent number: 9231135
    Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
    Type: Grant
    Filed: May 22, 2014
    Date of Patent: January 5, 2016
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Mark W. Wanlass, Jeffrey J. Carapella
  • Publication number: 20150020875
    Abstract: High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
    Type: Application
    Filed: June 24, 2014
    Publication date: January 22, 2015
    Inventors: Mark A. WANLASS, Jeffrey J. CARAPELLA, Myles A. STEINER
  • Publication number: 20140332848
    Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
    Type: Application
    Filed: May 22, 2014
    Publication date: November 13, 2014
    Applicant: Alliance for Sustainable Energy, LLC
    Inventors: Mark W. WANLASS, Jeffrey J. CARAPELLA
  • Patent number: 8772623
    Abstract: Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
    Type: Grant
    Filed: October 30, 2012
    Date of Patent: July 8, 2014
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Mark W. Wanlass, Jeffrey J. Carapella
  • Patent number: 8772628
    Abstract: High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
    Type: Grant
    Filed: January 29, 2009
    Date of Patent: July 8, 2014
    Assignee: Alliance for sustainable Energy, LLC
    Inventors: Mark W. Wanlass, Jeffrey J. Carapella, Myles A. Steiner
  • Publication number: 20110277828
    Abstract: A method for improving the overall quantum efficiency and output voltage in solar cells using spontaneous ordered semiconductor alloy absorbers to form a DOH below the front or above the back surface of the cell.
    Type: Application
    Filed: January 29, 2010
    Publication date: November 17, 2011
    Applicant: Alliance for Sustainable Energy, LLC
    Inventors: Mark W. Wanlass, Angelo Mascarenhas, Jeffrey J. Carapella
  • Publication number: 20110186115
    Abstract: High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
    Type: Application
    Filed: January 29, 2009
    Publication date: August 4, 2011
    Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
    Inventors: Mark W. Wanlass, Jeffrey J Carapella, Myles A. Steiner
  • Patent number: 5441897
    Abstract: A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.
    Type: Grant
    Filed: February 16, 1994
    Date of Patent: August 15, 1995
    Assignee: Midwest Research Institute
    Inventors: Rommel Noufi, Andrew M. Gabor, John R. Tuttle, Andrew L. Tennant, Miguel A. Contreras, David S. Albin, Jeffrey J. Carapella
  • Patent number: 5436204
    Abstract: A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z.
    Type: Grant
    Filed: August 22, 1994
    Date of Patent: July 25, 1995
    Assignee: Midwest Research Institute
    Inventors: David S. Albin, Jeffrey J. Carapella, John R. Tuttle, Miguel A. Contreras, Andrew M. Gabor, Rommel Noufi, Andrew L. Tennant