Abstract: A receiver having an integral stock connector component that extends along the receiver; two extension rod/rail apertures formed through the integral stock connector component, wherein each extension rod/rail aperture is formed so as to slidably receive an extension rod/rail extending from a buttstock, such that each extension rod/rail is slidably movable within one of the extension rod/rail apertures; wherein each extension rod/rail comprises a rod channel and two or more rod dimples/detents formed along the rod channel; and a latch that is movable between an engaged position and a disengaged position, wherein when the latch is in the engaged position, a protrusion portion urges latch elements into the rod/rail apertures a distance that seats the latch elements into the rod dimples/detents, and wherein when the latch is in the disengaged position, the protrusion portion allows the latch elements to retract from the rod dimples/detents and into the rod channels.

Abstract: A receiver having a stock connector component having a stock connector aperture formed therethrough; two rod apertures formed through the stock connector component, wherein each extension rod aperture is formed so as to slidably receive an extension rod extending from a stock, such that each extension rod is slidably movable within one of the rod apertures; wherein each extension rod comprises a rod channel and two or more rod dimples/detents formed along the rod channel; and a latch that is movable between an engaged position and a disengaged position, wherein when the latch is in the engaged position, a protrusion portion urges latch elements into the rod apertures a distance that seats the latch elements into the rod dimples/detents, and wherein when the latch is in the disengaged position, the protrusion portion allows the latch elements to retract from the rod dimples/detents and into the rod channels.

Abstract: A buttstock having a buttplate that comprises a partial hollow cylinder extending from a surface of the buttplate; a static arm extending from a first portion of the partial hollow cylinder; a dynamic arm extending from a second portion of the partial hollow cylinder, wherein the static arm is separated from the dynamic arm by a compression gap, wherein the dynamic arm can be urged toward the static arm; and an at least partially threaded static arm aperture formed through said static arm and aligned with a dynamic arm aperture formed through said dynamic arm.

Abstract: A receiver having an integral stock connector component that extends along the receiver; two extension rod/rail apertures formed through the integral stock connector component, wherein each extension rod/rail aperture is formed so as to slidably receive an extension rod/rail extending from a buttstock, such that each extension rod/rail is slidably movable within one of the extension rod/rail apertures; wherein each extension rod/rail comprises a rod channel and two or more rod dimples/detents formed along the rod channel; and a latch that is movable between an engaged position and a disengaged position, wherein when the latch is in the engaged position, a protrusion portion urges latch elements into the rod/rail apertures a distance that seats the latch elements into the rod dimples/detents, and wherein when the latch is in the disengaged position, the protrusion portion allows the latch elements to retract from the rod dimples/detents and into the rod channels.

Abstract: A receiver having an integral stock connector component that extends along the receiver; two extension rod/rail apertures formed through the integral stock connector component, wherein each extension rod/rail aperture is formed so as to slidably receive an extension rod/rail extending from a buttstock, such that each extension rod/rail is slidably movable within one of the extension rod/rail apertures; wherein each extension rod/rail comprises a rod channel and two or more rod dimples/detents formed along the rod channel; and a latch that is movable between an engaged position and a disengaged position, wherein when the latch is in the engaged position, a protrusion portion urges latch elements into the rod/rail apertures a distance that seats the latch elements into the rod dimples/detents, and wherein when the latch is in the disengaged position, the protrusion portion allows the latch elements to retract from the rod dimples/detents and into the rod channels.

Abstract: A receiver having a stock connector component having a stock connector aperture formed therethrough; two rod apertures formed through the stock connector component, wherein each extension rod aperture is formed so as to slidably receive an extension rod extending from a stock, such that each extension rod is slidably movable within one of the rod apertures; wherein each extension rod comprises a rod channel and two or more rod dimples/detents formed along the rod channel; and a latch that is movable between an engaged position and a disengaged position, wherein when the latch is in the engaged position, a protrusion portion urges latch elements into the rod apertures a distance that seats the latch elements into the rod dimples/detents, and wherein when the latch is in the disengaged position, the protrusion portion allows the latch elements to retract from the rod dim ples/detents and into the rod channels.

Abstract: A receiver having an integral stock connector component that extends along the receiver; two extension rod/rail apertures formed through the integral stock connector component, wherein each extension rod/rail aperture is formed so as to slidably receive an extension rod/rail extending from a buttstock, such that each extension rod/rail is slidably movable within one of the extension rod/rail apertures; wherein each extension rod/rail comprises a rod channel and two or more rod dimples/detents formed along the rod channel; and a latch that is movable between an engaged position and a disengaged position, wherein when the latch is in the engaged position, a protrusion portion urges latch elements into the rod/rail apertures a distance that seats the latch elements into the rod dimples/detents, and wherein when the latch is in the disengaged position, the protrusion portion allows the latch elements to retract from the rod dimples/detents and into the rod channels.

Abstract: After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling N2 gas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H2+97 vol % N2 to the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual H2O and residual O2 in the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual H2O and residual O2 in an exhaust gas are measured by sensors.

Abstract: A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes compromises SRO that contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrOx. A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.

Abstract: A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes comprises SRO that contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrOx. A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.

Abstract: A method for the fabrication of a cap layer on a top electrode layer of a ferroelectric capacitor includes the steps of depositing an amorphous layer, usually made of Sr(x)Ru(y)O3, on the top electrode and then annealing the amorphous layer in two stages in order convert the amorphous layer into the cap layer. The first anneal is performed at 500° C. to 700° C. in a non-oxidizing atmosphere, such as nitrogen, and converts the amorphous layer into a crystallized layer of Sr(x)Ru(y)O3. The second anneal is performed at 300° C. to 500° C. in an oxidizing atmosphere, such as oxygen, and converts the crystallized layer into the cap layer. The method is applied to the formation of a ferroelectric capacitor element of an integrated semiconductor device.

Abstract: After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling N2 gas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol %H2+97 vol %N2 to the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual H2O and residual O2 in the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual H2O and residual O2 in an exhaust gas are measured by sensors.

Abstract: A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes comprises SRO that laminating a first and a second oxide upper electrodes onto said oxide contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrOx. A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.

Abstract: A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes comprises SRO that contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrOx. A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.

Abstract: A method for the fabrication of a cap layer on a top electrode layer of a ferroelectric capacitor includes the steps of depositing an amorphous layer, usually made of Sr(x)Ru(y)O3, on the top electrode and then annealing the amorphous layer in two stages in order convert the amorphous layer into the cap layer. The first anneal is performed at 500° C. to 700° C. in a non-oxidizing atmosphere, such as nitrogen, and converts the amorphous layer into a crystallized layer of Sr(x)Ru(y)O3. The second anneal is performed at 300° C. to 500° C. in an oxidizing atmosphere, such as oxygen, and converts the crystallized layer into the cap layer. The method is applied to the formation of a ferroelectric capacitor element of an integrated semiconductor device.

Abstract: A method of manufacturing an electronic device including an oxide film of perovskite-type, said method comprising the steps of forming on a base substrate a first conductive oxide film of perovskite type in an atmosphere of reduced pressure at a first temperature, and performing heat treatment on the first conductive oxide film in an oxidizing atmosphere containing oxygen at a second temperature which is higher than the first temperature.