Abstract: The present disclosure relates to abrasive articles including an abrasive member having opposing major surfaces, a working surface and an exterior attachment surface, wherein the abrasive member comprises an inorganic material having a Mohs hardness greater than about 7.0; and a magnetic member, having opposing first and second major surfaces and a corresponding magnetic force, wherein the first major surface of the magnetic member faces the exterior attachment surface. The abrasive articles of the present disclosure may include a third member. The third member is attached to the magnetic member by a magnetic force. The abrasive member with attached magnetic member is designed to be easily removed from the third member. Methods of separating an abrasive member from an abrasive article and replacing the abrasive member of an abrasive article are also provided.

Abstract: Structured fixed abrasive articles including a multiplicity of three-dimensional abrasive composites fixed to the abrasive article, the abrasive composites further including a multiplicity of ceria abrasive particles having a volume mean diameter from 100 to 500 nanometers (nm) in a matrix material, the matrix material further including a polymeric binder and a multiplicity of surface treated ceria filler particles having a volume mean diameter less than 100 nm. Also provided are methods of making and using structured fixed abrasive articles according to the disclosure.

Abstract: Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

Abstract: Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

Abstract: Structured fixed abrasive articles including a multiplicity of three-dimensional abrasive composites fixed to the abrasive article, the abrasive composites further including a multiplicity of ceria abrasive particles having a volume mean diameter from 100 to 500 nanometers (nm) in a matrix material, the matrix material further including a polymeric binder and a multiplicity of surface treated ceria filler particles having a volume mean diameter less than 100 nm. Also provided are methods of making and using structured fixed abrasive articles according to the disclosure.

Abstract: The disclosure relates to fixed abrasive articles having a plurality of three-dimensional abrasive composites including abrasive particles dispersed in a matrix material including a polymeric binder and a plurality of nanoparticulate inorganic filler particles having a volume mean diameter no greater than 1000 nanometers (nm). In some embodiments, the volume mean diameter of the abrasive particles is less than 500 nm, and the volume mean diameter of the inorganic filler particles is no greater than 200 nm. In other embodiments using non-ceria abrasive particles, the ratio of the amount of matrix material to the amount of non-ceria abrasive particles on a volumetric basis is at least 2. In alternate embodiments using non-ceria abrasive particles, the ratio of the amount of non-ceria abrasive particles to the amount of inorganic filler particles on a volumetric basis is no greater than 3. Also provided are methods of making and using fixed abrasive articles according to the disclosure.

Abstract: Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

Abstract: Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

Abstract: Provided are several polishing compositions useful for modifying a surface, such as a semiconductor wafer suitable for fabrication of a semiconductor device, especially when used in fixed abrasive planarization techniques. The polishing compositions include a synergistic mixture of water, an oxidizing agent, a complexing agent, and metal ions. Also provided are various methods of surface planarization.

Abstract: The disclosure relates to fixed abrasive articles having a plurality of three-dimensional abrasive composites including abrasive particles dispersed in a matrix material including a polymeric binder and a plurality of nanoparticulate inorganic filler particles having a volume mean diameter no greater than 1000 nanometers (nm). In some embodiments, the volume mean diameter of the abrasive particles is less than 500 nm, and the volume mean diameter of the inorganic filler particles is no greater than 200 nm. In other embodiments using non-ceria abrasive particles, the ratio of the amount of matrix material to the amount of non-ceria abrasive particles on a volumetric basis is at least 2. In alternate embodiments using non-ceria abrasive particles, the ratio of the amount of non-ceria abrasive particles to the amount of inorganic filler particles on a volumetric basis is no greater than 3. Also provided are methods of making and using fixed abrasive articles according to the disclosure.

Abstract: The present invention is directed to an abrasive article comprising a fixed abrasive layer and a subpad. The fixed abrasive element is co-extensive with the subpad. The subpad comprises a resilient element. The resilient element has a Shore A hardness of no greater than 60 as measured using ASTM-2240.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: [[V1−Vs]/Aas]/Auc>5 where V1 is the volume defined by the area of the unit cell and the height of the structure of the unit cell, Vs is the volume of the structure of the unit cell, Aas is the apparent contact area of the structure of the unit cell, and Auc is the area of the unit cell, and b) moving at least one of the wafer and the article relative to each other in the presence of a polishing composition that is chemically reactive with a surface of the wafer and capable of either enhancing or inhibiting the rate of removal of at least a portion of the surface of the wafer.

Abstract: The present invention is directed to an abrasive article comprising a fixed abrasive layer and a subpad. The fixed abrasive element is co-extensive with the subpad. The subpad comprises a resilient element. The resilient element has a Shore A hardness of no greater than 60 as measured using ASTM-2240.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows:

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: [[V1−Vs]/Aas]/{square root over (A)}uc>5 where V1 is the volume defined by the area of the unit cell and the height of the structure of the unit cell, Vs is the volume of the structure of the unit cell, Aas is the apparent contact area of the structure of the unit cell, and Auc is the area of the unit cell, and b) moving at least one of the wafer and the article relative to each other in the presence of a polishing composition that is chemically reactive with a surface of the wafer and capable of either enhancing or inhibiting the rate of removal of at least a portion of the surface of the wafer.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: