Abstract: A package structure is provided. The package structure includes a leadframe, a GaN power device, and an electrostatic discharge protection component. The leadframe includes a gate pad, a source pad, and a drain pad, which are disposed on the leadframe. The GaN power device has a gate end. The GaN power device is disposed on the source pad of the leadframe. The electrostatic discharge protection component includes a first pad. The first pad is disposed on the electrostatic discharge protection component. The electrostatic discharge protection component is disposed on the source pad of the leadframe. The gate end of the GaN power device is electrically connected to the first pad of the electrostatic discharge protection component. The first pad of the electrostatic discharge protection component is electrically connected to the gate pad of the leadframe.

Abstract: A package structure is provided. The package structure includes a leadframe, a device, first protrusions, second protrusions, a conductive unit, and an encapsulation material. The device includes a substrate, an active layer, first electrodes, second electrodes and a third electrode. The first electrodes have different potentials than the second electrodes. The first electrodes and the second electrodes are arranged so that they alternate with each other. The first protrusions are disposed on each of the first electrodes. The second protrusions are disposed on each of the second electrodes. The first protrusions and the second protrusions are connected to the leadframe. The first side of the conductive unit is connected to the substrate of the device. The conductive unit is connected to the leadframe. The encapsulation material covers the device and the leadframe. The second side of the conductive unit is exposed from the encapsulation material.

Abstract: A package structure is provided. The package structure includes a substrate, a plurality of active components, a plurality of separated metal parts and an encapsulation material. The substrate has a first surface and a second surface. Each active component has a first surface and a second surface. Each metal part has a first surface and a second surface. The first surface of each active component is connected to the first surface of the substrate. The first surface of one metal part is connected to the second surface of one active component. Each metal part extends to connect to the first surface of the substrate. The encapsulation material covers the first surface of the substrate and surrounds the active components and the metal parts. The second surface of each metal part and the second surface of the substrate are exposed from the encapsulation material.

Abstract: A light emitting device is provided with a growing base having specific geometry to prevent delamination between the encapsulant and the growing base, and thereby enhance structural reliability of the light emitting device. Furthermore, the light emitting efficiency as well as uniformity of light output of the light emitting device can be improved by forming the side surface of the growing base with at least a curved portion or slanted portion, and uneven structures can be formed on the curved portion or slanted portion to further improve the uniformity of light output. Furthermore, the light emitting diode chips can be fabricated by taking batch processing on the growing substrate, as provided in the wafer-level structure, with the advantages of saving cost, improving yield, etc.

Abstract: A light emitting device is provided with a growing base having specific geometry to prevent delamination between the encapsulant and the growing base, and thereby enhance structural reliability of the light emitting device. Furthermore, the light emitting efficiency as well as uniformity of light output of the light emitting device can be improved by forming the side surface of the growing base with at least a curved portion or slanted portion, and uneven structures can be formed on the curved portion or slanted portion to further improve the uniformity of light output. Furthermore, the light emitting diode chips can be fabricated by taking batch processing on the growing substrate, as provided in the wafer-level structure, with the advantages of saving cost, improving yield, etc.

Abstract: A system and method for allowing a 2D character to perform a 3D motion having x-axis, y-axis and z-axis information is provided. In the present invention, 3D human motion data entered is analyzed to obtain motion information of angles, coordinates and depths of all human body parts in the 3D motion data. By matching a sprite with the 3D motion, an image of each body part of the 2D character is capable switching to a reasonable image for a particular angle according to angle information of the 3D motion data, and adjusting a size or deforming the image of each body part of the 2D character according to the depth and angle information of the 3D motion data. Therefore, the 2D character is allowed to achieve visual performance effects of frontal performance, sideways performance, turning performance or rear performance having depth information as a 3D character.

Abstract: A light-emitting device including a first substrate, a second substrate disposed above the first substrate a barrier structure disposed on the first substrate and surrounding the second substrate, at least one light-emitting semiconductor unit disposed on the second substrate and a glue disposed between the light-emitting semiconductor unit and the barrier structure is provided. The barrier structure is separated from the second substrate by a distance R in a direction parallel to the first substrate. At least one portion of the glue is filled into the distance R between the barrier structure and the second substrate.

Abstract: The invention is an illumination system comprising a semiconductor light source module. The illumination system comprises a reflector comprising a curved reflective surface, a holder coupled to the reflector, and a semiconductor light source module comprising a first light-emitting unit and a second light-emitting unit. The holder comprises a second holding section and a first holding section disposed between the reflector and the second holding section. The semiconductor light-source module is disposed on the second holding section to face the curved reflective surface. An angle between at least a light-emitting unit and at least a part of the first holding section is formed and ranges from 145 to 175 degrees.

Abstract: A system and method for allowing a 2D character to perform a 3D motion having x-axis, y-axis and z-axis information is provided. In the present invention, 3D human motion data entered is analyzed to obtain motion information of angles, coordinates and depths of all human body parts in the 3D motion data. By matching a sprite with the 3D motion, an image of each body part of the 2D character is capable switching to a reasonable image for a particular angle according to angle information of the 3D motion data, and adjusting a size or deforming the image of each body part of the 2D character according to the depth and angle information of the 3D motion data. Therefore, the 2D character is allowed to achieve visual performance effects of frontal performance, sideways performance, turning performance or rear performance having depth information as a 3D character.

Abstract: The present invention is a method for obtaining a better color rendering with a photoluminescence plate, and the better color rendering is obtained by using UV radiating on the photoluminescence plate stacked with a red photoluminescence plate, a green photoluminescence plate and a blue photoluminescence plate. Therefore, the color rendering is above 90% and close to the solar light. The photoluminescence plate can be made from directly coated with photoluminescence layers of three colors or with fully mixed fluorescent materials of three colors. Consequently, a white light relied on the present invention is more uniform than the conventional techniques with a color mixing performance based on tricolor LEDs.

Abstract: A method for enhance lightness of p-type nitride group compound L.E.D. is disclosed. The present invention, firstly, the p-type GaN semiconductor layer is provided, then, the different thickness and coverage for titanium metal are coated on the p-type GaN semiconductor layer. Next, the activation process is carried out in the heating tube under the nitrogen gas and quite high temperature, about certain minutes. Finally, The titanium metal is removed after the activation process, therefore the carrier concentration can be selectively changed, in order to enhance lightness for p-type nitride group compound L.E.D.

Abstract: The present invention is a method for obtaining a better color rendering with a photoluminescence plate, and the better color rendering is obtained by using UV radiating on the photoluminescence plate stacked with a red photoluminescence plate, a green photoluminescence plate and a blue photoluminescence plate. Therefore, the color rendering is above 90% and close to the solar light. The photoluminescence plate can be made from directly coated with photoluminescence layers of three colors or with fully mixed fluorescent materials of three colors. Consequently, a white light relied on the present invention is more uniform than the conventional techniques with a color mixing performance based on tricolor LEDs.

Abstract: An improved plating method in combination with a low-temperature thermal treatment is disclosed. The method for reducing the stress in the nickel-based alloy plating comprises the steps of: (a) adding ceramic particles into a plating bath containing soluble nickel salts; and (b) placing a substrate in the plating bath and thereafter carrying out a pulse-current electroplating in the plating bath. The method of this invention can prevent substrate softening or deformation problems. The use of a post low-temperature thermal treatment can slightly increase the hardness of the coating products. The use of the low-temperature thermal treatment can reduce the stress of the coatings since the hydrogen embrittlement resulting from exist of hydrogen in the coatings is eliminated.