Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Abstract: A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

Abstract: Semiconductor contact structures, a semiconductor device including the semiconductor contact structures, and a method for forming the same are disclosed. In an embodiment, a semiconductor device includes a channel layer on a substrate; an interface layer on the channel layer, the interface layer including titanium (Ti), the interface layer contacting the channel layer; and a contact metal layer over the interface layer, the contact metal layer including aluminum silicon copper alloy (AlSiCu).

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

Abstract: A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.

Abstract: Semiconductor contact structures, a semiconductor device including the semiconductor contact structures, and a method for forming the same are disclosed. In an embodiment, a semiconductor device includes a channel layer on a substrate; an interface layer on the channel layer, the interface layer including titanium (Ti), the interface layer contacting the channel layer; and a contact metal layer over the interface layer, the contact metal layer including aluminum silicon copper alloy (AlSiCu).

Abstract: A biosensor includes a transistor and a reactive electrode. The transistor has a source, a drain and a gate surface disposed therebetween. The reactive electrode is spaced apart from the gate surface of the transistor, has a receptor immobilized thereon for specific binding with an analyte in a liquid sample, and is configured to contact the liquid sample together with the gate surface of the transistor.

Abstract: In one aspect of the present disclosure, a semiconductor device includes a channel layer, an AlxIn1-xN layer on the channel layer with a thickness of t1, and a reverse polarization layer on the AlxIn1-xN layer with a thickness of t2. The thickness is 0.5×t1?t2?3×t1. In another aspect of the present disclosure, a method of manufacturing a semiconductor device is provided. The method including: forming a channel layer on a substrate; forming an AlxIn1-xN layer on the channel layer with a thickness of t1; and forming a reverse polarization layer on the AlxIn1-xN layer with a thickness of t2. The thickness is 0.5×t1?t2?3×t1.

Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

Abstract: A method for analyzing concentration of a cardiovascular disease (CVD) biomarker in a liquid sample includes: applying the liquid sample to a biosensor, the biosensor including a transistor having a drain, a source, and a gate terminal disposed between the gate and the source, and a reactive electrode spaced apart from the gate terminal of the transistor and having a receptor immobilized thereon for specific binding with the CVD biomarker, the liquid sample being in contact with the gate terminal and the reactive electrode; applying a voltage pulse between the reactive electrode and the source, the voltage pulse having a pulse width; monitoring a response current in response to the voltage pulse; and analyzing the response current.

Abstract: A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

Abstract: A viscosity measurement system, which is for measuring the viscosity of a fluid, comprises a transistor-type viscosity sensor, an electrical measurement unit, and a processing unit. The transistor-type viscosity sensor includes a semiconductor structure, a source terminal, and a drain terminal. The semiconductor structure includes a GaN layer and an AlGaN layer disposed on the GaN layer. The portion of the semiconductor structure that is between the source terminal and the drain terminal has a gate region, which has an exposed surface for being in contact with the fluid. The electrical measurement unit is in electrical connection with the source terminal and the drain terminal and for measuring an electronic signal of the semiconductor structure. The processing unit is coupled to the electrical measurement unit and for determining the viscosity of the fluid according to the electronic signal measured.

Abstract: A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N compound layer. A first anode region is located on the III-N compound layer and extends into the III-N compound layer. The bottom of the first anode region is under the channel region. A second anode region is located on the III-N compound layer between the cathode region and the first anode region, and extends into the III-N compound material layer. The second anode region includes a high-energy barrier region. The high-energy barrier region adjoins a sidewall of the first anode region. A method for manufacturing a diode device is also provided.

Abstract: A method for analyzing concentration of a cardiovascular disease (CVD) biomarker in a liquid sample includes: applying the liquid sample to a biosensor, the biosensor including a transistor having a drain, a source, and a gate terminal disposed between the gate and the source, and a reactive electrode spaced apart from the gate terminal of the transistor and having a receptor immobilized thereon for specific binding with the CVD biomarker, the liquid sample being in contact with the gate terminal and the reactive electrode; applying a voltage pulse between the reactive electrode and the source, the voltage pulse having a pulse width; monitoring a response current in response to the voltage pulse; and analyzing the response current.

Abstract: In one aspect of the present disclosure, a semiconductor device includes a channel layer, an AlxIn1-xN layer on the channel layer with a thickness of t1, and a reverse polarization layer on the AlxIn1-xN layer with a thickness of t2. The thickness is 0.5×t1?t2?3×t1. In another aspect of the present disclosure, a method of manufacturing a semiconductor device is provided. The method including: forming a channel layer on a substrate; forming an AlxIn1-xN layer on the channel layer with a thickness of t1; and forming a reverse polarization layer on the AlxIn1-xN layer with a thickness of t2. The thickness is 0.5×t1?t2?3×t1.

Abstract: A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N compound layer. A first anode region is located on the III-N compound layer and extends into the III-N compound layer. The bottom of the first anode region is under the channel region. A second anode region is located on the III-N compound layer between the cathode region and the first anode region, and extends into the III-N compound material layer. The second anode region includes a high-energy barrier region. The high-energy barrier region adjoins a sidewall of the first anode region. A method for manufacturing a diode device is also provided.

Abstract: A biosensor includes a transistor and a reactive electrode. The transistor has a source, a drain and a gate surface disposed therebetween. The reactive electrode is spaced apart from the gate surface of the transistor, has a receptor immobilized thereon for specific binding with an analyte in a liquid sample, and is configured to contact the liquid sample together with the gate surface of the transistor.

Abstract: Disclosed is a wafer comprising a first layer of GaSb grown on a GaSb substrate by molecular beam epitaxy (MBE), an oxide layer deposited on the surface of the first layer, and a cap layer deposited on the surface of the oxide layer. The wafer was capped with an arsenic (As) layer after the growth of the first layer. The As layer was removed from the wafer before the oxide layer was deposited on the surface of the first layer. Also disclosed is a method of forming a wafer. The method comprises growing a first layer of GaSb on a GaSb substrate by MBE, capping the wafer with an As layer after the growth of the first layer, removing the As layer from the wafer, depositing an oxide layer on the surface of the first layer, and depositing a cap layer on the surface of the oxide layer.