Patents by Inventor Jen-Wei Liu
Jen-Wei Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240126327Abstract: The present disclosure provides an electronic wearable device. The electronic wearable device includes a first module having a first contact and a second module having a second contact. The first contact is configured to keep electrical connection with the second contact in moving with respect to each other during a wearing period.Type: ApplicationFiled: October 14, 2022Publication date: April 18, 2024Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Chao Wei LIU, Wei-Hao CHANG, Yung-I YEH, Jen-Chieh KAO, Tun-Ching PI, Ming-Hung CHEN, Hui-Ping JIAN, Shang-Lin WU
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Publication number: 20240091764Abstract: A combinable nucleic acid pre-processing apparatus includes a sample transfer chamber transferring a sample from a sampling tube to a nucleic acid extraction kit, a nucleic acid extraction chamber performing a nucleic acid extraction of the sample in the nucleic acid extraction kit for obtaining a nucleic acid extract, an assay setup chamber preparing reagents and transferring reagents and the nucleic acid extract to an assay plate, and at least two bridging modules respectively disposed between the sample transfer chamber and the nucleic acid extraction chamber and between the nucleic acid extraction chamber and the assay setup chamber. The sample transfer chamber, the nucleic acid extraction chamber and the assay setup chamber are separated and operated independently. Three chambers are connected through the bridging modules, so the nucleic acid extraction kit can be sequentially moved in the sample transfer chamber, the nucleic acid extraction chamber and the assay setup chamber.Type: ApplicationFiled: September 19, 2023Publication date: March 21, 2024Inventors: Chien-Ting Liu, Shih-Fang Peng, Song-Bin Huang, Guo-Wei Huang, Jen-Chih Tsai
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Publication number: 20230092846Abstract: A combination, comprising a first component and a second component; the first component is selected from a group composed of the following: the compound of formula (I), a pharmaceutically acceptable salt thereof, and a combination thereof, wherein A is a C1-C8 aliphatic hydrocarbon group optionally containing a carbonyl group as needed; X is H or OH; Y is O; and R1 is H or is not present, the condition being that when R1 is not present, Y and A bond to form a five-membered ring; and the second component is selected from a group composed of the following: a topoisomerase inhibitor, a microtubule assembly inhibitor, a platinum-based agent, an antimetabolite, and a combination thereof.Type: ApplicationFiled: January 14, 2021Publication date: March 23, 2023Applicant: EVERFRONT BIOTECH INC.Inventors: Tzyy-Wen CHIOU, Horng-Jyh HARN, Shinn-Zong LIN, Jui-Hao Lee, Jen-Wei Liu, Szu-Yin Lin
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Publication number: 20220367262Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.Type: ApplicationFiled: July 25, 2022Publication date: November 17, 2022Inventors: Cheng-Lun TSAI, Huei-Wen HSIEH, Chun-Sheng CHEN, Kai-Shiang KUO, Jen-Wei LIU, Cheng-Hui WENG, Chun-Chien LIN, Hung-Wen SU
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Patent number: 11430692Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.Type: GrantFiled: July 29, 2020Date of Patent: August 30, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Cheng-Lun Tsai, Huei-Wen Hsieh, Chun-Sheng Chen, Kai-Shiang Kuo, Jen-Wei Liu, Cheng-Hui Weng, Chun-Chieh Lin, Hung-Wen Su
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Publication number: 20220037203Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.Type: ApplicationFiled: July 29, 2020Publication date: February 3, 2022Inventors: Cheng-Lun TSAI, Huei-Wen HSIEH, Chun-Sheng CHEN, Kai-Shiang KUO, Jen-Wei LIU, Cheng-Hui WENG, Chun-Chieh LIN, Hung-Wen SU
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Publication number: 20200339557Abstract: The present invention relates to benzoxazole derivatives having the following Formula (I): The compounds of the present invention are found to possess the ability to decrease PD-L1 level, suggesting that the compounds of the invention can be used in cancer immunotherapy and treatment or prevention of sepsis or septic shock.Type: ApplicationFiled: July 9, 2020Publication date: October 29, 2020Applicant: MACKAY MEDICAL FOUNDATION THE PRESBYTERIAN CHURCH IN TAIWAN MACKAY MEMORIAL HOSPITALInventors: Yen-Ta LU, Tzenge-Lien SHIH, Chia-Ming CHANG, Tsai-Yin WEI, Jen-Wei LIU
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Publication number: 20170283408Abstract: The present invention relates to benzoxazole derivatives having the following Formula (I): The compounds of the present invention are found to possess the ability to decrease PD-L1 level, suggesting that the compounds of the invention can be used in cancer immunotherapy and treatment or prevention of sepsis or septic shock.Type: ApplicationFiled: September 17, 2015Publication date: October 5, 2017Inventors: YEN-TA LU, TZENGE-LIEN SHIH, CHIA-MING CHANG, TSAI-YIN WEI, JEN-WEI LIU
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Patent number: 8421506Abstract: An output buffer with process and temperature compensation comprises an enable terminal, a clock generator, a PMOS threshold voltage detector, an NMOS threshold voltage detector, a first comparator, a second comparator, a first compensation code generator, a second compensation code generator and an output buffer stage, wherein the output buffer stage has an output stage, the output buffer stage means for controlling a drive current generated by the output stage, wherein the output stage has a first voltage output terminal, and the modulated drive current is capable of compensating slew rate of the first voltage output terminal.Type: GrantFiled: July 28, 2010Date of Patent: April 16, 2013Assignee: National Sun Yat-Sen UniversityInventors: Chua-Chin Wang, Ron-Chi Kuo, Jen-Wei Liu, Ming-Dou Ker
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Patent number: 8193837Abstract: A corner detector comprises a PMOS threshold voltage detector and an NMOS threshold voltage detector, the PMOS threshold voltage detector is composed of a first clock terminal, a first CMOS inverter, a first capacitor, a PMOS threshold voltage function generator and a first voltage output terminal, wherein the PMOS threshold voltage function generator is electrically connected to the first capacitor and applied to generate a first formula of voltage signal as a function of threshold voltage, the NMOS threshold voltage detector is composed of a second clock terminal, a second CMOS inverter, a second capacitor, an NMOS threshold voltage function generator and a second voltage output terminal, wherein the NMOS threshold voltage function generator is electrically connected to the second capacitor and applied to generate a second formula of voltage signal as a function of threshold voltage.Type: GrantFiled: July 28, 2010Date of Patent: June 5, 2012Assignee: National Sun Yat-Sen UniversityInventors: Chua-Chin Wang, Ron-Chi Kuo, Jen-Wei Liu, Ming-Dou Ker
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Publication number: 20110298498Abstract: A corner detector comprises a PMOS threshold voltage detector and an NMOS threshold voltage detector, the PMOS threshold voltage detector is composed of a first clock terminal, a first CMOS inverter, a first capacitor, a PMOS threshold voltage function generator and a first voltage output terminal, wherein the PMOS threshold voltage function generator is electrically connected to the first capacitor and applied to generate a first formula of voltage signal as a function of threshold voltage, the NMOS threshold voltage detector is composed of a second clock terminal, a second CMOS inverter, a second capacitor, an NMOS threshold voltage function generator and a second voltage output terminal, wherein the NMOS threshold voltage function generator is electrically connected to the second capacitor and applied to generate a second formula of voltage signal as a function of threshold voltage.Type: ApplicationFiled: July 28, 2010Publication date: December 8, 2011Inventors: Chua-Chin WANG, Ron-Chi KUO, Jen-Wei LIU, Ming-Dou KER
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Publication number: 20110291742Abstract: An output buffer with process and temperature compensation comprises an enable terminal, a clock generator, a PMOS threshold voltage detector, an NMOS threshold voltage detector, a first comparator, a second comparator, a first compensation code generator, a second compensation code generator and an output buffer stage, wherein the output buffer stage has an output stage, the output buffer stage means for controlling a drive current generated by the output stage, wherein the output stage has a first voltage output terminal, and the modulated drive current is capable of compensating slew rate of the first voltage output terminal.Type: ApplicationFiled: July 28, 2010Publication date: December 1, 2011Inventors: Chua-Chin WANG, Ron-Chi Kuo, Jen-Wei Liu, Ming-Dou Ker