Patents by Inventor Jennifer C. Xu

Jennifer C. Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10877634
    Abstract: A computing machine receives an input comprising: a representation of one or more tasks and a representation of one or more assets. The computing machine initiates generation of a mission plan data structure comprising an assignment of an available asset to each task. Upon successfully generating the mission plan data structure, the computing machine provides an output comprising the mission plan data structure.
    Type: Grant
    Filed: October 3, 2019
    Date of Patent: December 29, 2020
    Assignee: Raytheon Company
    Inventors: Michael P. Sica, Jennifer N. Coston, Michael C. Xu, Kyle V. Dumouchelle
  • Patent number: 10444180
    Abstract: A polymer electrolyte-based sensor is disclosed. The sensor includes a conductive polymer electrolyte film including water-retaining components. The water-retaining components facilitate operational conductivity of the conductive polymer electrolyte film in lower humidity environments than would be possible without the water-retaining components.
    Type: Grant
    Filed: July 19, 2012
    Date of Patent: October 15, 2019
    Assignee: United States of America as Represented by the Administrator of National Aeronautics and Space Administration
    Inventors: Gary W Hunter, Jennifer C Xu, Chung-Chiun Liu
  • Patent number: 8877636
    Abstract: Systems and methods that incorporate nanostructures into microdevices are discussed herein. These systems and methods can allow for standard microfabrication techniques to be extended to the field of nanotechnology. Sensors incorporating nanostructures can be fabricated as described herein, and can be used to reliably detect a range of gases with high response.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: November 4, 2014
    Assignee: The United States of America as Represented by the Adminstrator of National Aeronautics and Space Administration
    Inventors: Gary W Hunter, Jennifer C Xu, Laura J Evans, Michael H Kulis, Gordon M Berger, Randall L Vander Wal
  • Patent number: 8702962
    Abstract: A gas sensor comprises a substrate layer; a pair of interdigitated metal electrodes, said electrodes include upper surfaces, the electrodes selected from the group consisting of Pt, Pd, Au, Ir, Ag, Ru, Rh, In, Os, and their alloys. A first layer of solid electrolyte staying in between electrode fingers and partially on said upper surfaces of said electrodes, said first layer selected from NASICON, LISICON, KSICON and ??-Alumina. A second layer of metal carbonate(s) as an auxiliary electrolyte engaging said upper surfaces of the electrodes and the first solid electrolyte. The metal carbonates selected from the group consisting of the following ions Na+, K+, Li+, Ag+, H+, Pb2+, Sr2+, Ba2+, and any combination thereof.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: April 22, 2014
    Assignee: The United States of America as Represented by the Administrator of National Aeronautics and Space Administration
    Inventors: Gary W. Hunter, Jennifer C. Xu
  • Publication number: 20120263870
    Abstract: A gas sensor includes a substrate and a pair of interdigitated metal electrodes selected from the group consisting of Pt, Pd, Au, Ir, Ag, Ru, Rh, In, and Os. The electrodes each include an upper surface. A first solid electrolyte resides between the interdigitated electrodes and partially engages the upper surfaces of the electrodes. The first solid electrolyte is selected from the group consisting of NASICON, LISICON, KSICON, and ??-Alumina (beta prime-prime alumina in which when prepared as an electrolyte is complexed with a mobile ion selected from the group consisting of Na+, K+, Li+, Ag+, H+, Pb2+, Sr2+ or Ba2+). A second electrolyte partially engages the upper surfaces of the electrodes and engages the first solid electrolyte in at least one point. The second electrolyte is selected from the group of compounds consisting of Na+, K+, Li+, Ag+, H+, Pb2+, Sr2+ or Ba2+ ions or combinations thereof.
    Type: Application
    Filed: October 7, 2011
    Publication date: October 18, 2012
    Inventors: Gary W. Hunter, Jennifer C. Xu, Chung Chiun Liu, Benjamin C. Ward
  • Patent number: 8052854
    Abstract: A gas sensor includes a substrate and a pair of interdigitated metal electrodes selected from the group consisting of Pt, Pd, Au, Ir, Ag, Ru, Rh, In, and Os. The electrodes each include an upper surface. A first solid electrolyte resides between the interdigitated electrodes and partially engages the upper surfaces of the electrodes. The first solid electrolyte is selected from the group consisting of NASICON, LISICON, KSICON, and ??-Alumina (beta prime-prime alumina in which when prepared as an electrolyte is complexed with a mobile ion selected from the group consisting of Na+, K+, Li+, Ag+, H+, Pb2+, Sr2+ or Ba2+). A second electrolyte partially engages the upper surfaces of the electrodes and engages the first solid electrolyte in at least one point. The second electrolyte is selected from the group of compounds consisting of Na+, K+, Li+, Ag+, H+, Pb2+, Sr2+ or Ba2+ ions or combinations thereof.
    Type: Grant
    Filed: May 25, 2007
    Date of Patent: November 8, 2011
    Assignee: The United States of America as represented by the Administrator of National Aeronautics and Space Administration
    Inventors: Gary W. Hunter, Jennifer C. Xu, Chung Chiun Liu, Benjamin J. Ward
  • Patent number: 8001828
    Abstract: A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx ). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.
    Type: Grant
    Filed: June 20, 2008
    Date of Patent: August 23, 2011
    Assignee: The United States of America as represented by the Administrator of National Aeronautics and Space Administration
    Inventors: Gary W. Hunter, Jennifer C. Xu, Dorothy Lukco
  • Publication number: 20090113992
    Abstract: A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.
    Type: Application
    Filed: June 20, 2008
    Publication date: May 7, 2009
    Inventors: Gary W. Hunter, Jennifer C. Xu, Dorothy Lukco
  • Patent number: 7389675
    Abstract: A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: June 24, 2008
    Assignee: The United States of America as represented by the National Aeronautics and Space Administration
    Inventors: Gary W. Hunter, Jennifer C. Xu, Dorothy Lukco