Patents by Inventor Jennifer K. Hite

Jennifer K. Hite has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200400578
    Abstract: A method for mapping and analyzing a GaN substrate to identify areas of the substrate suitable for fabrication of electronic devices thereon. Raman spectroscopy is performed over the surface of a GaN substrate to produce maps of the E2 and A1 peaks at a plurality of areas on the substrate surface, the E2 and A1 peaks being associated with known concentrations of defects and charge carriers, so that areas of the GaN substrate having relatively high resistivity or conductivity which make those areas suitable or unsuitable for fabrication of electronic devices can be identified. The devices can then be fabricated only on suitable areas of the substrate, or the size of the devices can be tailored to maximize the yield of devices fabricated thereon. Substrates not meeting a threshold level of defect and/or charge carrier concentration can be discarded without fabrication of poor-quality devices thereon.
    Type: Application
    Filed: June 19, 2020
    Publication date: December 24, 2020
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Travis J. Anderson, Jennifer K. Hite, James C. Gallagher, Karl D. Hobart
  • Patent number: 9679766
    Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: June 13, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr., Nelson Garces
  • Publication number: 20160336171
    Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.
    Type: Application
    Filed: May 20, 2016
    Publication date: November 17, 2016
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, JR., Nelson Garces
  • Patent number: 9396941
    Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: July 19, 2016
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr., Nelson Garces
  • Patent number: 9111786
    Abstract: A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: August 18, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite
  • Patent number: 9105499
    Abstract: A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.
    Type: Grant
    Filed: March 24, 2015
    Date of Patent: August 11, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite
  • Publication number: 20150221647
    Abstract: A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.
    Type: Application
    Filed: December 19, 2014
    Publication date: August 6, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, JR., Jennifer K. Hite
  • Publication number: 20150221649
    Abstract: A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.
    Type: Application
    Filed: March 24, 2015
    Publication date: August 6, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, JR., Jennifer K. Hite
  • Patent number: 9018056
    Abstract: A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: April 28, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, Jr., Jennifer K. Hite
  • Patent number: 8999060
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: April 7, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
  • Publication number: 20140264380
    Abstract: A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.
    Type: Application
    Filed: January 31, 2014
    Publication date: September 18, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Charles R. Eddy, JR., Jennifer K. Hite
  • Patent number: 8679248
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: March 25, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
  • Publication number: 20130186326
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Application
    Filed: March 12, 2013
    Publication date: July 25, 2013
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, JR.
  • Publication number: 20120068189
    Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.
    Type: Application
    Filed: September 19, 2011
    Publication date: March 22, 2012
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, JR., Nelson Garces
  • Publication number: 20110123425
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Application
    Filed: November 23, 2010
    Publication date: May 26, 2011
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, JR.