Patents by Inventor Jennifer Sigman

Jennifer Sigman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8659869
    Abstract: A method for forming a stacking structure, including forming a ruthenium oxide layer over a substrate; forming a praseodymium oxide layer over the ruthenium oxide layer; and forming a titanium oxide layer over the praseodymium oxide layer; wherein the titanium oxide layer has a rutile phase with the existence of the praseodymium oxide layer underneath. The oxide layers are deposited by a plurality of atomic layer deposition cycles using ruthenium precursor, praseodymium precursor, titanium precursor, and ozone.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: February 25, 2014
    Assignee: Nanya Technology Corporation
    Inventors: Chun I Hsieh, Vishwanath Bhat, Jennifer Sigman, Vassil Antonov, Wei Hui Hsu
  • Publication number: 20130182367
    Abstract: A method for forming a stacking structure, including forming a ruthenium oxide layer over a substrate; forming a praseodymium oxide layer over the ruthenium oxide layer; and forming a titanium oxide layer over the praseodymium oxide layer; wherein the titanium oxide layer has a rutile phase with the existence of the praseodymium oxide layer underneath. The oxide layers are deposited by a plurality of atomic layer deposition cycles using ruthenium precursor, praseodymium precursor, titanium precursor, and ozone.
    Type: Application
    Filed: January 12, 2012
    Publication date: July 18, 2013
    Applicant: Nan Ya Technology Corporation
    Inventors: Chun I HSIEH, Vishwanath Bhat, Jennifer Sigman, Vassil Antonov, Wei Hui Hsu