Abstract: The present disclosure relates to adjusting a reading speed of a memory system. A method for adjusting a reading speed of a memory system, including: generating an alternating sequence signal in which high levels and low levels appear alternately, associated with an output delay of the memory system; generating a reference signal having a predetermined frequency and a reference delay; generating a comparison result signal indicating a range of a difference between an output delay and the reference delay based on an alternating sequence signal and a reference signal; and determining whether a value indicated by a comparison result signal is a predetermined value, so as to adjust the reading speed of the memory system based on a determination result.

Abstract: The present disclosure relates to adjusting a reading speed of a memory system. A method for adjusting a reading speed of a memory system, including: generating an alternating sequence signal in which high levels and low levels appear alternately, associated with an output delay of the memory system; generating a reference signal having a predetermined frequency and a reference delay; generating a comparison result signal indicating a range of a difference between an output delay and the reference delay based on an alternating sequence signal and a reference signal; and determining whether a value indicated by a comparison result signal is a predetermined value, so as to adjust the reading speed of the memory system based on a determination result.

Abstract: Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.

Abstract: A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit includes a plurality of bit line structures, a plurality of word line structures intersecting said plurality of bit line structures to form a plurality of cell locations, and a plurality of cells located at said plurality of cell locations, each of said cells being selectively coupled to a corresponding bit line structure under control of a corresponding word line structure, each of said cells comprising a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor, wherein said at least first n-type field effect transistor is formed with a relatively thick buried oxide layer sized to reduce capacitance of said bit line structures, and said at least first p-type field effect transistor is formed with a relatively thin buried oxide layer.

Abstract: A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit includes a plurality of bit line structures, a plurality of word line structures intersecting said plurality of bit line structures to form a plurality of cell locations, and a plurality of cells located at said plurality of cell locations, each of said cells being selectively coupled to a corresponding bit line structure under control of a corresponding word line structure, each of said cells comprising a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor, wherein said at least first n-type field effect transistor is formed with a relatively thick buried oxide layer sized to reduce capacitance of said bit line structures, and said at least first p-type field effect transistor is formed with a relatively thin buried oxide layer.

Abstract: A memory circuit includes a plurality of bit line structures, a plurality of word line structures intersecting the plurality of bit line structures to form a plurality of cell locations; and a plurality of cells located at the plurality of cell locations. Each of the cells is selectively coupled to a corresponding one of the bit line structures under control of a corresponding one of the word line structures, and each of the cells in turn includes a logical storage element having at least a first n-type field effect transistor and at least a first p-type field effect transistor. The at least first n-type field effect transistor is formed with a relatively thick buried oxide layer sized to reduce capacitance of the bit line structures, and the at least first p-type field effect transistor is formed with a relatively thin buried oxide layer.

Abstract: Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.

Abstract: A dynamic logic gate has a device for charging a dynamic node during a pre-charge phase of a clock. A logic tree evaluates the dynamic node with a device during an evaluate phase of the clock. The dynamic node has a keeper circuit comprising an inverter with its input coupled to the dynamic node and its output coupled to the back gate of a dual gate PFET device. The source of the dual gate PFET is coupled to the power supply and its drain is coupled to the dynamic node forming a half latch. The front gate of the dual gate PFET is coupled to a logic circuit with a mode input and a logic input coupled back to a node sensing the state of the dynamic node. The mode input may be a slow mode to preserve dynamic node state or the clock delayed that turns ON the strong keeper after evaluation.

Abstract: A system to evaluate a voltage in a charge pump may include a transistor, and a transistor drain carried by the transistor with the transistor drain receiving a reference current. The system may also include a transistor gate carried by the transistor and connected to the transistor drain. The system may further include an additional transistor and an additional transistor gate carried by the additional transistor and connected to the transistor gate. The system may additionally include an additional transistor drain to receive the reference current mirrored from the additional transistor.

Abstract: A system to evaluate a voltage in a charge pump may include a transistor, and a transistor drain carried by the transistor with the transistor drain receiving a reference current. The system may also include a transistor gate carried by the transistor and connected to the transistor drain. The system may further include an additional transistor and an additional transistor gate carried by the additional transistor and connected to the transistor gate. The system may additionally include an additional transistor drain to receive the reference current mirrored from the additional transistor.

Abstract: Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.

Abstract: Methods and apparatus are provided for varying one or more of a supply voltage and reference voltage in an integrated circuit, using independent control of a diode voltage in an asymmetrical double-gate device. An integrated circuit is provided that is controlled by one or more of a supply voltage and a reference voltage. The integrated circuit comprises an independently controlled asymmetrical double-gate device to adjust one or more of the supply voltage and the reference voltage. The independent control may comprise, for example, a back gate bias. The independently controlled asymmetrical double-gate device may be employed in a number of applications, including voltage islands, static RAM, and to improve the power and performance of a processing unit.

Abstract: A dynamic logic gate has a device for charging a dynamic node during a pre-charge phase of a clock. A logic tree evaluates the dynamic node with a device during an evaluate phase of the clock. The dynamic node has a keeper circuit comprising an inverter with its input coupled to the dynamic node and its output coupled to the back gate of a dual gate PFET device. The source of the dual gate PFET is coupled to the power supply and its drain is coupled to the dynamic node forming a half latch. The front gate of the dual gate PFET is coupled to a logic circuit with a mode input and a logic input coupled back to a node sensing the state of the dynamic node. The mode input may be a slow mode to preserve dynamic node state or the clock delayed that turns ON the strong keeper after evaluation.

Abstract: A method and apparatus implement improved timing performance of a signal bus through wire permutation with repowering buffers. A repowering buffer includes a prebuffer and a postbuffer. A plurality of prebuffers and postbuffers are stored in a design library, each having a set wiring ordered arrangement for selectively providing wire permutation of the signal bus. A wiring order of prebuffer at the beginning of the bus is identical to the wiring order of the postbuffer at the end of bus. The wiring order of the postbuffer driving the beginning of bus wires between adjacent repowering buffers is identical to the wiring order of the prebuffer receiving at the end of the bus wires. A wiring order of the downstream buffer pairs is chosen so that there is at least one pair of wires separated by another wire or wires in the bus.

Abstract: A dynamic logic gate has a device for charging a dynamic node during a pre-charge phase of a clock. A logic tree evaluates the dynamic node with a device during an evaluate phase of the clock. The dynamic node has a keeper circuit comprising an inverter with its input coupled to the dynamic node and its output coupled to the back gate of a dual gate PFET device. The source of the dual gate PFET is coupled to the power supply and its drain is coupled to the dynamic node forming a half latch. The front gate of the dual gate PFET is coupled to a logic circuit with a mode input and a logic input coupled back to a node sensing the state of the dynamic node. The mode input may be a slow mode to preserve dynamic node state or the clock delayed that turns ON the strong keeper after evaluation.

Abstract: A dynamic logic gate has a dynamic node pre-charged in response to a pre-charge phase of a clock signal and a logic tree with a plurality of logic inputs for evaluating the dynamic node during an evaluate phase of the clock signal in response to a Boolean combination of the logic inputs. The logic tree has a stacked configuration with at least one multi-gate FEAT device for coupling an intermediate node of the logic tree to the dynamic node in response to a first logic input of the plurality of logic inputs or in response to the pre-charge phase of the clock signal. The multi-gate FEAT device has one gate coupled to the first logic input and a second gate coupled to a complement of the clock signal used to pre-charge the dynamic node.

Abstract: A single-stage level shifting circuit is used to interface control signals across the boundary between voltage domains with differing positive or ground voltage potentials Asserted states are determined by the difference between the positive voltages potentials and the ground potentials. A lower positive power supply potential is not used to turn OFF PFET coupled to a higher positive power supply potential. Likewise a higher ground power supply potential is not used to turn OF NFETs coupled to a power domain where is significant ground shift. The single stage level shifting circuit has keeper devices that hold asserted states using voltages within the power gated domain.

Abstract: A 4-to-2 carry save adder with a reduction in the delay of outputting the sum and carry bits. The 4-to-2 carry save adder may include a lower order full order coupled to a higher order full adder. The carry save adder may further include a logic unit coupled to the higher order full adder where the logic unit is configured to generate a carry bit to be inputted to the higher order full adder that normally would be generated from the carry save adder located in the previous stage. By generating this carry bit (carry-in bit) in the current stage and not in the previous stage, the delay of the carry-in bit inputted to the higher order full adder is reduced thereby reducing the delay of outputting the sum and carry bits by the higher order full adder.

Abstract: A dynamic logic circuit apparatus and method for reducing leakage power consumption via separate clock and output stage control reduces power consumption of processors and other systems incorporating dynamic circuits. The power control signal may be a delayed version of the logic clock and turns on the output inverter foot device after the dynamic node has had sufficient time to evaluate, providing a fast evaluate time and reducing leakage through the inverter input when the foot device is off. Alternatively, a coarsely timed static power control signal may be used to control the inverter foot devices. The drains of the inverter foot devices can be commonly connected across multiple circuits, reducing the foot device total area.

Abstract: A dynamic logic circuit incorporating reduced leakage state-retaining devices reduces power consumption of processors and other systems incorporating dynamic circuits. A keeper circuit provides a low leakage retention of the state of the output stage of the dynamic circuit so that an output circuit foot device can be disabled except when required for a transition in the output of the dynamic circuit. The keeper circuit includes a transistor having a smaller area than a corresponding transistor in the output circuit, thus reducing leakage through the gate of the output circuit when the keeper circuit is holding the output and the output circuit foot device is disabled. A self-clocked control of the output circuit foot device can be provided via a delayed version of the dynamic logic gate output, or may be provided by an external control circuit that generates a delayed version of the precharge clock or a multi-cycle signal.