Abstract: Provided herein are systems, methods and compositions for rendering cells or the expression of an effector protein sensitive to a predetermined condition. In one aspect, cells can be rendered dependent upon the presence of an environmental agent, e.g., an exogenous agent, without which the cell will default to expression of a death protein and be killed. In another aspect, cells can be rendered sensitive to the presence of a set of predetermined conditions such that cells will only grow when two or more necessary exogenous agents are supplied, and without either of which, the cells are killed. In this aspect, hybrid transcription factors provide a vast array of possible predetermined conditions.

Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

Abstract: Disclosed is a method for changing a role over control authorization performed in a communication apparatus. The method may comprise receiving, from a second controller, a role-request message requesting a role change of the second controller to a master controller; transmitting a role status request message for confirmation of the role change of the second controller to a first controller which is a previous master controller; and determining whether to accept the role change of the second controller according to a role status response message received from the first controller. Therefore, reliability may be guaranteed when a role of master controller is changed.

Abstract: Disclosed are a packet output controlling method and a network device using the same. A packet output controlling method according to the present invention, as a method for processing flow in a plurality (N, where N is a natural number of 2 or greater) of flow tables connected by a pipeline, may comprise the steps of: passing a packet input into a flow from a first table to an N?1st table from among a plurality of tables; processing an output-dedicated Nth table (egress table) guided by the N?1st table with respect to the packet after the packet passes the N?1st table; and outputting the packet after processing the Nth table. Accordingly, the flexible control of a final output is made possible through various operations using output port information.

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.

Abstract: A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: A method and device for processing an address resolution protocol (ARP) in a software-defined networking (SDN) environment is disclosed. The method includes receiving, by a first network device, an ARP request packet from a first terminal so that the first terminal communicates with a second terminal and transmitting, by the first network device, an ARP response message including MAC address information of the second terminal to the first terminal as a response to the ARP request packet. Accordingly, a load of the controller can be reduced by sharing and processing an ARP proxy function with the network device in the SDN environment.

Abstract: Disclosed are methods for managing transactions in a software defined network (SDN). A method performed in a controller may comprise generating a group message for modifying flow entries of a plurality of flow tables related to each other in a switch; and transmitting the group message to the switch. Thus, a plurality of flow tables having relevance to each other can be simultaneously modified so that modifications on a plurality of switches can be synchronized, and consistency of them can be guaranteed.

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Abstract: Disclosed are methods for managing transactions in a software defined network (SDN). A method performed in a controller may comprise generating a group message for modifying flow entries of a plurality of flow tables related to each other in a switch; and transmitting the group message to the switch. Thus, a plurality of flow tables having relevance to each other can be simultaneously modified so that modifications on a plurality of switches can be synchronized, and consistency of them can be guaranteed.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers grown at a first temperature and a plurality of quantum barrier layers grown at a second temperature higher than the first temperature, and forming a second conductivity-type semiconductor layer.

Abstract: A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed.

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Abstract: Disclosed are a packet output controlling method and a network device using the same. A packet output controlling method according to the present invention, as a method for processing flow in a plurality (N, where N is a natural number of 2 or greater) of flow tables connected by a pipeline, may comprise the steps of: passing a packet input into a flow from a first table to an N?1st table from among a plurality of tables; processing an output-dedicated Nth table (egress table) guided by the N?1st table with respect to the packet after the packet passes the N?1st table; and outputting the packet after processing the Nth table. Accordingly, the flexible control of a final output is made possible through various operations using output port information.

Abstract: In a refrigerator door in which a decoration member is mounted to a door frame using a foam material, the foam material fills a space formed between the decoration member mounted to a front side of the door frame and a rear panel mounted to a rear side of the door frame. Accordingly, the decoration member can be fixed to the door frame through direct contact with the foam material.

Abstract: A method and device for processing an address resolution protocol (ARP) in a software-defined networking (SDN) environment is disclosed. The method includes receiving, by a first network device, an ARP request packet from a first terminal so that the first terminal communicates with a second terminal and transmitting, by the first network device, an ARP response message including MAC address information of the second terminal to the first terminal as a response to the ARP request packet. Accordingly, a load of the controller can be reduced by sharing and processing an ARP proxy function with the network device in the SDN environment.

Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.