Patents by Inventor Jeong-Sik Yang

Jeong-Sik Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240106020
    Abstract: Provided is a method for recovering and reusing an active material from a positive electrode scrap.
    Type: Application
    Filed: August 1, 2022
    Publication date: March 28, 2024
    Inventors: Eun-Kyu SEONG, Min-Seo KIM, Se-Ho PARK, Yong-Sik SEO, Doo-Kyung YANG, Jeong-Bae LEE
  • Patent number: 11912915
    Abstract: The present invention relates to a phosphine precursor for the preparation of a quantum dot, and a quantum dot prepared therefrom. Using the phosphine precursor for the preparation of a quantum dot of the present invention, a quantum dot with improved luminous efficiency and higher luminous color purity can be provided.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: February 27, 2024
    Assignee: SK Chemicals Co., Ltd.
    Inventors: Hee Il Chae, Jeong Ho Park, Kyung Sil Yoon, Ju-Sik Kang, Yu Mi Chang, Nam-Choul Yang, Jae Kyun Park, Song Lee
  • Patent number: 11917907
    Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: February 27, 2024
    Assignee: Rohm and Haas Electronic Materials Korea Ltd.
    Inventors: Kyoung-Jin Park, Tae-Jin Lee, Jae-Hoon Shim, Yoo Jin Doh, Hee-Choon Ahn, Young-Kwang Kim, Doo-Hyeon Moon, Jeong-Eun Yang, Su-Hyun Lee, Chi-Sik Kim, Ji-Song Jun
  • Patent number: 6239624
    Abstract: A low-power sense amplifier for a memory is provided, which includes a differential amplifier for sensing and amplifying a weak voltage signal of a bit line connected to a memory cell, and a latch amplifier for storing data inputted thereto, the latch amplifier being operated by the output signal of the differential amplifier, the sense amplifier including a bias means constructed of transistors which are included in the differential amplifier and turned on or turned off by a control signal, the transistors providing a load resistor component required for driving the differential amplifier when it is turned on, and a cutoff means for turning off the transistors constructing the bias means to stop the operation of the differential amplifier when there is a first logic state signal among the output signals of the latch amplifier. Accordingly, the low-power sense amplifier for a memory can perform high-speed sense amplification of bit line signal and prevent unnecessary power consumption.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: May 29, 2001
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jeong-Sik Yang, Beomsup Kim