Patents by Inventor Jer-Hueih(James) CHEN

Jer-Hueih(James) CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180286967
    Abstract: A method of forming self-aligned STI regions extending over portions of a Si substrate to enable the subsequent formation of epitaxially grown embedded S/D regions without using a lithography mask and the resulting device are provided. Embodiments include forming a STI etch mask with laterally separated openings over a Si substrate; forming shallow trenches into the Si substrate through the openings; forming first through fourth oxide spacers on opposite sidewalls of the shallow trenches and the openings; forming a deep STI trench between the first and second oxide spacers and between the third and fourth oxide spacers down into the Si substrate; forming a STI oxide layer over the first through fourth oxide spacers and a portion of the STI etch mask, the STI oxide layer filling the deep STI trenches; and planarizing the STI oxide layer down to the portion of the STI etch mask.
    Type: Application
    Filed: June 4, 2018
    Publication date: October 4, 2018
    Inventors: Jing WAN, Jer-Hueih(James) CHEN, Cuiqin XU, Padmaja NAGAIAH
  • Patent number: 10020383
    Abstract: A method of forming self-aligned STI regions extending over portions of a Si substrate to enable the subsequent formation of epitaxially grown embedded S/D regions without using a lithography mask and the resulting device are provided. Embodiments include forming a STI etch mask with laterally separated openings over a Si substrate; forming shallow trenches into the Si substrate through the openings; forming first through fourth oxide spacers on opposite sidewalls of the shallow trenches and the openings; forming a deep STI trench between the first and second oxide spacers and between the third and fourth oxide spacers down into the Si substrate; forming a STI oxide layer over the first through fourth oxide spacers and a portion of the STI etch mask, the STI oxide layer filling the deep STI trenches; and planarizing the STI oxide layer down to the portion of the STI etch mask.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: July 10, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Jing Wan, Jer-Hueih(James) Chen, Cuiqin Xu, Padmaja Nagaiah
  • Publication number: 20160343607
    Abstract: A method of forming self-aligned STI regions extending over portions of a Si substrate to enable the subsequent formation of epitaxially grown embedded S/D regions without using a lithography mask and the resulting device are provided. Embodiments include forming a STI etch mask with laterally separated openings over a Si substrate; forming shallow trenches into the Si substrate through the openings; forming first through fourth oxide spacers on opposite sidewalls of the shallow trenches and the openings; forming a deep STI trench between the first and second oxide spacers and between the third and fourth oxide spacers down into the Si substrate; forming a STI oxide layer over the first through fourth oxide spacers and a portion of the STI etch mask, the STI oxide layer filling the deep STI trenches; and planarizing the STI oxide layer down to the portion of the STI etch mask.
    Type: Application
    Filed: May 20, 2015
    Publication date: November 24, 2016
    Inventors: Jing WAN, Jer-Hueih(James) CHEN, Cuiqin XU, Padmaja NAGAIAH