Abstract: An apparatus for generating a magnetic field including permanent magnets arranged in a plane, each magnet being spatially separated along the plane from the adjacent magnet by a predetermined spacing, each magnet having a magnetic polarity opposed to the polarity of the adjacent magnet such that a magnetic field of adjacent magnets is oriented substantially perpendicular to the plane and in opposite directions, each magnet being spatially separated in the plane from the adjacent magnet by a nonmagnetic material. A method for programming a magnetic device or sensor device using the apparatus is also described.

Abstract: An apparatus for generating a magnetic field including permanent magnets arranged in a plane, each magnet being spatially separated along the plane from the adjacent magnet by a predetermined spacing, each magnet having a magnetic polarity opposed to the polarity of the adjacent magnet such that a magnetic field of adjacent magnets is oriented substantially perpendicular to the plane and in opposite directions, each magnet being spatially separated in the plane from the adjacent magnet by a nonmagnetic material. A method for programming a magnetic device or sensor device using the apparatus is also described.

Abstract: Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.

Abstract: Method for writing to a MRAM cell including a magnetic tunnel junction including a first and second ferromagnetic layer, and a tunnel barrier layer; and a bipolar transistor in electrical connection with one end of the magnetic tunnel junction, the bipolar transistor being arranged for controlling the passing and polarity of a heating current in the magnetic tunnel junction. The method includes a sequence of writing steps, each writing step including passing the heating current in the magnetic tunnel junction such as to heat it to a high temperature threshold; and once the magnetic tunnel junction has reached the high temperature threshold, adjusting a second magnetization of the second ferromagnetic layer for writing a write data; wherein during one of the writing steps, the polarity of the heating current is reversed from one during the subsequent writing step. The method allows for an increased lifespan of the MRAM cell.

Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.