Patents by Inventor Jerome J. Cuomo
Jerome J. Cuomo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11472713Abstract: Disclosed herein are aluminum oxide aerogels and methods of making and use thereof. The methods of making the aluminum oxide aerogel include contacting a solid comprising aluminum with a Ga-based liquid alloy to dissolve at least a portion of the aluminum from the solid, thereby forming an aluminum-alloy mixture; and contacting the aluminum-alloy mixture with a fluid comprising water, thereby forming the aluminum oxide aerogel. In some examples, the methods can further comprise capturing and converting carbon dioxide to a syngas comprising carbon monoxide and hydrogen.Type: GrantFiled: October 3, 2018Date of Patent: October 18, 2022Assignee: North Carolina State UniversityInventors: Paul Maggard, Jerome J. Cuomo, Keith Markham, William Kiether
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Publication number: 20220234029Abstract: Activated metal low temperature reaction processes and products are disclosed. A method for capturing a target element from a target source includes providing a matrix comprising an activated metal dispersed in a metal activating agent. The method also includes contacting the target source with the matrix. The target element is selected from the group consisting of carbon, sulfur, nitrogen, and a combination of two or more of the foregoing. The target source comprises a compound selected from the group consisting of a target carbon compound, a target sulfur compound, a target nitrogen compound, and a combination of two or more of the foregoing.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Inventor: Jerome J. Cuomo
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Patent number: 11298682Abstract: In a method for capturing carbon, sulfur, and/or nitrogen from a target source, a matrix including activated metal dispersed in a metal activating agent is provided. The target source may be or include a carbon, sulfur, and/or nitrogen target compound. The target source is contacted with the matrix, wherein the activated metal reacts with the target source to produce elemental carbon, elemental sulfur, elemental nitrogen, and/or one or more compounds transformed from the target compound(s). The matrix may be produced by contacting a metal with the metal activating agent, and maintaining contact between the metal and the metal activating agent for a period of time sufficient for metal atoms from the solid metal to disperse in the metal activating agent. The reaction may also produce a metal compound. The activated metal may also be utilized in alkylation and other synthesis processes.Type: GrantFiled: May 7, 2015Date of Patent: April 12, 2022Assignee: North Carolina State UniversityInventor: Jerome J. Cuomo
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Publication number: 20200239326Abstract: Disclosed herein are aluminum oxide aerogels and methods of making and use thereof. The methods of making the aluminum oxide aerogel include contacting a solid comprising aluminum with a Ga-based liquid alloy to dissolve at least a portion of the aluminum from the solid, thereby forming an aluminum-alloy mixture; and contacting the aluminum-alloy mixture with a fluid comprising water, thereby forming the aluminum oxide aerogel. In some examples, the methods can further comprise capturing and converting carbon dioxide to a syngas comprising carbon monoxide and hydrogen.Type: ApplicationFiled: October 3, 2018Publication date: July 30, 2020Inventors: Paul Maggard, Jerome J. Cuomo, Keith Markham, William Kiether
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Publication number: 20170080405Abstract: In a method for capturing carbon, sulfur, and/or nitrogen from a target source, a matrix including activated metal dispersed in a metal activating agent is provided. The target source may be or include a carbon, sulfur, and/or nitrogen target compound. The target source is contacted with the matrix, wherein the activated metal reacts with the target source to produce elemental carbon, elemental sulfur, elemental nitrogen, and/or one or more compounds transformed from the target compound(s). The matrix may be produced by contacting a metal with the metal activating agent, and maintaining contact between the metal and the metal activating agent for a period of time sufficient for metal atoms from the solid metal to disperse in the metal activating agent. The reaction may also produce a metal compound. The activated metal may also be utilized in alkylation and other synthesis processes.Type: ApplicationFiled: May 7, 2015Publication date: March 23, 2017Applicant: North Carolina State UniversityInventor: Jerome J. Cuomo
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Patent number: 8491936Abstract: The present invention provides a biocompatible coating comprising calcium phosphate that is functionally graded across the thickness of the coating. The coating, which preferably includes hydroxyapatite, is particularly useful for coating implants, such as dental or orthopedic implants. The functionally graded coating is generally crystalline near the interface with the surface of the implant, with crystallinity and crystal diameter decreasing toward the outer layer of the coating. The invention further provides methods for preparing a coated implant comprising a functionally graded calcium phosphate coating thereon.Type: GrantFiled: March 16, 2005Date of Patent: July 23, 2013Assignee: North Carolina State UniversityInventors: Afsaneh Rabiei, Jerome J. Cuomo, Brent C. Thomas
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Patent number: 8133324Abstract: The invention provides a method for the at least partial removal of one or more polymeric coating layers from a coated substrate having at least one coated surface. The method includes generating at least one reactive species in an ionized gas stream discharged at atmospheric pressure; and placing the coated surface in the ionized gas stream. The at least one reactive species reacts with the one or more polymeric coating layers such that one or more coating layers is at least partially removed from the coated surface of the substrate at atmospheric pressure.Type: GrantFiled: June 16, 2005Date of Patent: March 13, 2012Assignee: PPG Industries Ohio, IncInventors: James A. Claar, Jerome J. Cuomo, David A. Diehl, Christopher J. Oldham, Roger C. Sanwald, Truman F. Wilt, Peter J. Yancey
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Publication number: 20090103074Abstract: The present application is directed to methods for performing quality control analysis of a process to treat a surface of a workpiece. A sensor is placed in proximity to the surface, and a controller analyzes data obtained by analyzing a signal from the sensor. The controller may determine whether the process started properly, the presence of a lubricant on the surface, and the amount of the lubricant.Type: ApplicationFiled: October 17, 2007Publication date: April 23, 2009Applicant: TRIBOFILM RESEARCH, INC.Inventors: Jerome J. Cuomo, Vinay G. Sakhrani
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Patent number: 6787010Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.Type: GrantFiled: November 29, 2001Date of Patent: September 7, 2004Assignee: North Carolina State UniversityInventors: Jerome J. Cuomo, N. Mark Williams
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Patent number: 6784085Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.Type: GrantFiled: November 30, 2001Date of Patent: August 31, 2004Assignee: North Carolina State UniversityInventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
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Patent number: 6692568Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.Type: GrantFiled: November 30, 2001Date of Patent: February 17, 2004Assignee: Kyma Technologies, Inc.Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
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Patent number: 6627034Abstract: A method of forming a laminate structure comprises providing a first substrate and a second substrate each having first and second substrate surfaces respectively, and wherein the surfaces are present in an opposed spaced apart relationship; contacting at least one of the first or second substrate surfaces with a release material such that a portion of the first or second substrate surface is covered with the release material while the remainder of the first or second substrate surface is not covered with the release material; bringing the first and second substrate surfaces of the first and second substrates into contact with each other; and subjecting the substrates to conditions such that the portions of the first and second substrate surfaces not covered with release material become bonded to one another and a laminate structure is formed.Type: GrantFiled: July 26, 2000Date of Patent: September 30, 2003Assignee: North Carolina State UniversityInventors: Stefan Ufer, Jerome J. Cuomo
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Publication number: 20030148030Abstract: An article of manufacture includes an elastomeric substrate and a plasma deposited polymeric coating on a portion of the elastomeric substrate.Type: ApplicationFiled: June 11, 2002Publication date: August 7, 2003Inventors: Paul M. Vernon, Vinay Sakhrani, Jerome J. Cuomo
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Patent number: 6582823Abstract: A substantially optically transparent article such as a lens having a wear-resistant surface comprises a substantially optically transparent polymeric substrate (e.g., a polycarbonate or polymethyl methacrylate substrate), and having a surface portion. A hard antiabrasive interconnecting layer is formed on the surface portion (typically by vacuum deposition and preferably by plasma-enhanced chemical vapor deposition), and a lubricious hydrophobic coating layer is bonded to the interconnecting layer. The lubricious hydrophobic coating layer, together with the hard antiabrasive interconnecting layer, form a wear-resistant surface on the substrate. The lubricious coating layer is formed from a hydrophobic organic lubricant such as a perfluoropolyether, a fatty acid, or a fatty acid esters. Methods of making such articles are also disclosed.Type: GrantFiled: April 30, 1999Date of Patent: June 24, 2003Assignee: North Carolina State UniversityInventors: Vinay Sakhrani, Jerome J. Cuomo, Paul M. Vernon, Jr., Charles K. Chiklis, Charles Tomasino
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Publication number: 20020172938Abstract: A substrate having a chemically modified surface comprises a base layer having a coating positioned thereon. The coating includes a chemically crosslinked material comprising elements selected from the group consisting of (1) M, O, C, H, and N; wherein M is a metal selected from the group consisting of silicon, titanium, tantalum, germanium, boron, zirconium, aluminum, hafnium and yttrium, (2) M, O, H, and N wherein M is defined above, (3) C, (4) O, C, H, and N, and (5) M or C and one of O, H, or N, wherein the chemically crosslinked material is terminated with at least one electrophilic or nucleophilic functional group.Type: ApplicationFiled: April 4, 2001Publication date: November 21, 2002Inventors: Jerome J. Cuomo, Vinay Sakrani, Stefan Ufer
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Publication number: 20020108847Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.Type: ApplicationFiled: November 29, 2001Publication date: August 15, 2002Inventors: Jerome J. Cuomo, N. Mark Williams
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Publication number: 20020086534Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group IIl nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.Type: ApplicationFiled: November 30, 2001Publication date: July 4, 2002Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
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Publication number: 20020078881Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.Type: ApplicationFiled: November 30, 2001Publication date: June 27, 2002Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
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Patent number: 6323554Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH4 to WF6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.Type: GrantFiled: July 10, 1998Date of Patent: November 27, 2001Assignee: International Business Machines CorporationInventors: Rajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal, Louis L. Hsu
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Patent number: 6147402Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.Type: GrantFiled: July 10, 1998Date of Patent: November 14, 2000Assignee: International Business Machines CorporationInventors: Rajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal, Louis L. Hsu