Patents by Inventor Jerome J. Cuomo

Jerome J. Cuomo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170080405
    Abstract: In a method for capturing carbon, sulfur, and/or nitrogen from a target source, a matrix including activated metal dispersed in a metal activating agent is provided. The target source may be or include a carbon, sulfur, and/or nitrogen target compound. The target source is contacted with the matrix, wherein the activated metal reacts with the target source to produce elemental carbon, elemental sulfur, elemental nitrogen, and/or one or more compounds transformed from the target compound(s). The matrix may be produced by contacting a metal with the metal activating agent, and maintaining contact between the metal and the metal activating agent for a period of time sufficient for metal atoms from the solid metal to disperse in the metal activating agent. The reaction may also produce a metal compound. The activated metal may also be utilized in alkylation and other synthesis processes.
    Type: Application
    Filed: May 7, 2015
    Publication date: March 23, 2017
    Applicant: North Carolina State University
    Inventor: Jerome J. Cuomo
  • Patent number: 8491936
    Abstract: The present invention provides a biocompatible coating comprising calcium phosphate that is functionally graded across the thickness of the coating. The coating, which preferably includes hydroxyapatite, is particularly useful for coating implants, such as dental or orthopedic implants. The functionally graded coating is generally crystalline near the interface with the surface of the implant, with crystallinity and crystal diameter decreasing toward the outer layer of the coating. The invention further provides methods for preparing a coated implant comprising a functionally graded calcium phosphate coating thereon.
    Type: Grant
    Filed: March 16, 2005
    Date of Patent: July 23, 2013
    Assignee: North Carolina State University
    Inventors: Afsaneh Rabiei, Jerome J. Cuomo, Brent C. Thomas
  • Patent number: 8133324
    Abstract: The invention provides a method for the at least partial removal of one or more polymeric coating layers from a coated substrate having at least one coated surface. The method includes generating at least one reactive species in an ionized gas stream discharged at atmospheric pressure; and placing the coated surface in the ionized gas stream. The at least one reactive species reacts with the one or more polymeric coating layers such that one or more coating layers is at least partially removed from the coated surface of the substrate at atmospheric pressure.
    Type: Grant
    Filed: June 16, 2005
    Date of Patent: March 13, 2012
    Assignee: PPG Industries Ohio, Inc
    Inventors: James A. Claar, Jerome J. Cuomo, David A. Diehl, Christopher J. Oldham, Roger C. Sanwald, Truman F. Wilt, Peter J. Yancey
  • Publication number: 20090103074
    Abstract: The present application is directed to methods for performing quality control analysis of a process to treat a surface of a workpiece. A sensor is placed in proximity to the surface, and a controller analyzes data obtained by analyzing a signal from the sensor. The controller may determine whether the process started properly, the presence of a lubricant on the surface, and the amount of the lubricant.
    Type: Application
    Filed: October 17, 2007
    Publication date: April 23, 2009
    Applicant: TRIBOFILM RESEARCH, INC.
    Inventors: Jerome J. Cuomo, Vinay G. Sakhrani
  • Patent number: 6787010
    Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: September 7, 2004
    Assignee: North Carolina State University
    Inventors: Jerome J. Cuomo, N. Mark Williams
  • Patent number: 6784085
    Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: August 31, 2004
    Assignee: North Carolina State University
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
  • Patent number: 6692568
    Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.
    Type: Grant
    Filed: November 30, 2001
    Date of Patent: February 17, 2004
    Assignee: Kyma Technologies, Inc.
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
  • Patent number: 6627034
    Abstract: A method of forming a laminate structure comprises providing a first substrate and a second substrate each having first and second substrate surfaces respectively, and wherein the surfaces are present in an opposed spaced apart relationship; contacting at least one of the first or second substrate surfaces with a release material such that a portion of the first or second substrate surface is covered with the release material while the remainder of the first or second substrate surface is not covered with the release material; bringing the first and second substrate surfaces of the first and second substrates into contact with each other; and subjecting the substrates to conditions such that the portions of the first and second substrate surfaces not covered with release material become bonded to one another and a laminate structure is formed.
    Type: Grant
    Filed: July 26, 2000
    Date of Patent: September 30, 2003
    Assignee: North Carolina State University
    Inventors: Stefan Ufer, Jerome J. Cuomo
  • Publication number: 20030148030
    Abstract: An article of manufacture includes an elastomeric substrate and a plasma deposited polymeric coating on a portion of the elastomeric substrate.
    Type: Application
    Filed: June 11, 2002
    Publication date: August 7, 2003
    Inventors: Paul M. Vernon, Vinay Sakhrani, Jerome J. Cuomo
  • Patent number: 6582823
    Abstract: A substantially optically transparent article such as a lens having a wear-resistant surface comprises a substantially optically transparent polymeric substrate (e.g., a polycarbonate or polymethyl methacrylate substrate), and having a surface portion. A hard antiabrasive interconnecting layer is formed on the surface portion (typically by vacuum deposition and preferably by plasma-enhanced chemical vapor deposition), and a lubricious hydrophobic coating layer is bonded to the interconnecting layer. The lubricious hydrophobic coating layer, together with the hard antiabrasive interconnecting layer, form a wear-resistant surface on the substrate. The lubricious coating layer is formed from a hydrophobic organic lubricant such as a perfluoropolyether, a fatty acid, or a fatty acid esters. Methods of making such articles are also disclosed.
    Type: Grant
    Filed: April 30, 1999
    Date of Patent: June 24, 2003
    Assignee: North Carolina State University
    Inventors: Vinay Sakhrani, Jerome J. Cuomo, Paul M. Vernon, Jr., Charles K. Chiklis, Charles Tomasino
  • Publication number: 20020172938
    Abstract: A substrate having a chemically modified surface comprises a base layer having a coating positioned thereon. The coating includes a chemically crosslinked material comprising elements selected from the group consisting of (1) M, O, C, H, and N; wherein M is a metal selected from the group consisting of silicon, titanium, tantalum, germanium, boron, zirconium, aluminum, hafnium and yttrium, (2) M, O, H, and N wherein M is defined above, (3) C, (4) O, C, H, and N, and (5) M or C and one of O, H, or N, wherein the chemically crosslinked material is terminated with at least one electrophilic or nucleophilic functional group.
    Type: Application
    Filed: April 4, 2001
    Publication date: November 21, 2002
    Inventors: Jerome J. Cuomo, Vinay Sakrani, Stefan Ufer
  • Publication number: 20020108847
    Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.
    Type: Application
    Filed: November 29, 2001
    Publication date: August 15, 2002
    Inventors: Jerome J. Cuomo, N. Mark Williams
  • Publication number: 20020086534
    Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group IIl nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.
    Type: Application
    Filed: November 30, 2001
    Publication date: July 4, 2002
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
  • Publication number: 20020078881
    Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.
    Type: Application
    Filed: November 30, 2001
    Publication date: June 27, 2002
    Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
  • Patent number: 6323554
    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH4 to WF6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.
    Type: Grant
    Filed: July 10, 1998
    Date of Patent: November 27, 2001
    Assignee: International Business Machines Corporation
    Inventors: Rajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal, Louis L. Hsu
  • Patent number: 6147402
    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.
    Type: Grant
    Filed: July 10, 1998
    Date of Patent: November 14, 2000
    Assignee: International Business Machines Corporation
    Inventors: Rajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal, Louis L. Hsu
  • Patent number: 5976975
    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the-hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.
    Type: Grant
    Filed: July 10, 1998
    Date of Patent: November 2, 1999
    Assignee: International Business Machines Corporation
    Inventors: Rajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal, Louis L. Hsu
  • Patent number: 5889328
    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.
    Type: Grant
    Filed: December 3, 1996
    Date of Patent: March 30, 1999
    Assignee: International Business Machines Corporation
    Inventors: Rajiv V. Joshi, Jerome J. Cuomo, Hormazdyar M. Dalal, Louis L. Hsu
  • Patent number: 5852303
    Abstract: A composition of matter in the form of an amorphous matrix having cesium dispersed therein is disclosed. The composition is capable of cold cathode emission, thus emitting electrons at wide range of temperatures, including room temperature. The matrix can be formed from amorphous diamond, diamond-like carbon, and other materials as well. Methods of making an amorphous matrix using single and multi-ion beam techniques are also disclosed.
    Type: Grant
    Filed: October 11, 1996
    Date of Patent: December 22, 1998
    Inventors: Jerome J. Cuomo, Seong I. Kim
  • Patent number: 5795653
    Abstract: A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 18, 1998
    Assignee: International Business Machines Corporation
    Inventors: Jerome J. Cuomo, Joseph E. Yehoda