Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the-hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: A composition of matter in the form of an amorphous matrix having cesium dispersed therein is disclosed. The composition is capable of cold cathode emission, thus emitting electrons at wide range of temperatures, including room temperature. The matrix can be formed from amorphous diamond, diamond-like carbon, and other materials as well. Methods of making an amorphous matrix using single and multi-ion beam techniques are also disclosed.

Abstract: A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air.

Abstract: A method of gas plasma treating a workpiece in a process chamber having RF coil outside the chamber, a flat dielectric window, and a electrically conducting shield, adapted to be located between the RF coil and the dielectric window. The shield comprises a planar body section having a periphery, central opening, and outer gaps forming a substantially continuous opening about the periphery. A uniform magnetic field, inductively coupled with the plasma, is formed by routing the flux lines of the magnetic field through the central opening and outer gaps of the shield. Contamination from sputtering is substantially eliminated by reducing the capacitive electric fields generated by the coil that interfere with the inductive coupling between the coil and the gas plasma.

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: A strain sensitive columnar transducer for a data entry keyboard contains a column upstanding from the keyboard. Strain sensitive orthogonally oriented patterns are formed on a single flexible planar sheet which is sliced to place each of the patterns on a separate tab. The planar sheet is forced over the column so that the patterns lie up against the sides of the column to measure force exerted on the column.

Abstract: A method of machining a complex pattern into the air bearing surface of a magnetic head slider includes the steps of forming a die with a diamond surface which has a pattern which is a reverse image of the desired pattern for the surface of the slider; placing the die with the pattern of the die facing the surface of the slider; placing an abrasive slurry between the die and the surface of the slider; applying a pressure between the die and the surface of the slider; and ultrasonically vibrating the die and the slider reciprocally with respect to one another to cause the abrasive slurry to grind the desired pattern into the surface of the slider.

Abstract: Apparatus and process for polishing a diamond or carbon nitride film by reaction of the film with oxygen anions at the interface between the film and a superionic conductor (e.g., yttria stabilized zirconia) placed in contact with the film. Oxygen anions produced by the formation of vacancies in the superionic conductor are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Application of an electric field and/or heat can be used to increase the oxygen partial pressure on the side of the interface opposite the film. An oxygen plasma can be supplied to the superionic conductor such that oxygen ions from the plasma transpire through the superionic conductor to the interface and react with the diamond or carbon nitride.

Abstract: A shield for shunting capacitive electric fields generated by an RF coil away from a gas plasma process chamber's dielectric window and toward ground. The shield comprise an electrically conducting, substantially planar body section having a periphery and adapted to be located between the RF coil and the dielectric window during plasma treating of a workpiece. A central opening in the body section and gaps about the periphery permit RF magnetic fields to inductively couple with the plasma and return around the coil, respectively. The shield substantially reduces interference by capacitive electric fields generated by the coil with inductive coupling between the coil and the gas plasma, thus substantially eliminating contamination from sputtering of the dielectric window by the capacitive electric fields.

Abstract: A device includes a substrate, at least one dielectric layer positioned on said substrate, and metalization positioned in an opening in the at least one dielectric layer and extending a predetermined distance towards the substrate from a surface which is substantially coplanar with a surface of the at least one dielectric layer. The metalization includes a low resistivity metal or alloy encapsulated by a refractory metal or alloy having a resistivity greater than that of the low resistivity metal or alloy and having a columnar structure. The metalization has a plurality of sides in cross-section, at least three sides of the plurality of sides being substantially formed of a refractory metal or alloy having a common composition, at least two sides of the plurality of sides extending substantially the predetermined distance, and all of the plurality of sides being formed within the opening in the at least one dielectric layer.

Abstract: A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air.

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.

Abstract: A contact structure for a semiconductor device having a first refractory metal layer formed only at the bottom of a contact hole. The first refractory metal is selected from a group comprising titanium (Ti), titanium alloys or compounds such as Ti/TiN, tungsten (W), titanium/tungsten (Ti/W) alloys, or chromium (Cr) or tantalum (Ta) and their alloys or some other suitable material. A low resistivity layer comprising a single, binary or ternary metalization is deposited over the first refractory metal layer in the contact hole by a method such as PVD using evaporation or collimated sputtering. The low resistivity layer has side walls which taper inwardly toward one another with increasing height of the layer and the low resistivity layer does not contact the side walls of the contact hole. The low resistivity layer may be Al.sub.x Cu.sub.y (x+y=1; x.gtoreq.0, y.gtoreq.0), ternary alloys such as Al-Pd-Cu or multicomponent alloys such as Al-Pd-Nb-Au.

Abstract: A process chamber having voltage driven electrodes, e.g. plasma chamber, can be made self cleaning of particle contamination by appropriate design of the workpiece or electrode surface to provide protuberances, grooves or tapers thereon which result in a predetermined pattern in the electrostatic potential within the process chamber which can trap particulate contamination in preselected regions within the plasma chamber. These particles can then be channeled out of the process chamber through a pump port.

Abstract: A plasma processing apparatus comprising: a chamber for supporting a workpiece; an inlet for introducing a gas into the chamber; a coil of conductive material having a generally flattened configuration whereby to provide a at least one generally planar surface defined by parallel conductors disposed on the chamber; and apparatus for applying radio frequency energy to the coil.

Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.

Abstract: Optical elements, and methods for fabricating them, are described wherein each element includes a free standing (self supporting) polycrystalline continuous thin film of diamond combined with a non-hydrogenated amorphous diamond like carbon (DLC) film having a high percentage of sp.sup.3 bonding. These elements may be designed to have optically smooth surfaces, have wide optical transmission ranges (for example, be transparent across the infrared portion of the spectrum), and exhibit exceptional durability characteristics. Optical instruments that include such elements are also described, along with the derivative benefits, such as improved operating performance and lower maintenance requirements, realized using the novel optical elements. In particular, a polarization Michaelson interferometer (PMI) is taught which is operative over the entire range from far infrared into the visible portion of the spectrum without requiring the exchange of beam splitters or beam polarizers.

Abstract: A process for the preparation of oriented, ceramic oxides from a bilayer structure of a polycrystalline superconducting ceramic oxide and a second ceramic oxide material having a lower melting point than the superconducting ceramic oxide. The process comprises the steps of preparing a substrate, depositing the superconducting ceramic oxide and second ceramic oxide in alternate layers, and heat treating the resulting composite structure to obtain an oriented structure whereby the c-axes of the unit cells of the crystallites are predominantly normal to the surface of the substrate.