Abstract: Provided are a thin-film solar cell module structure and a method of manufacturing the same.

Abstract: An exemplary embodiment relates to a nano-color coating layer and a method of forming the same, and more particularly, to a color structure representing a back side-reflection color with metallic luster and high chroma when observed in a substrate incident mode by greatly enhancing light absorbance at a specific wavelength using a resonance structure in which a light absorbing material is inserted between a transparent substrate and an upper mirror layer. In addition, the exemplary embodiment provides a color structure which controls metallic luster and texture of a high-chroma color from gloss-semi-gloss-matte texture in various ways by introducing a haze surface structure in which light scattering occurs on at least one surface of the transparent substrate.

Abstract: Disclosed is a conjugated polymer for an organic solar cell. The proportion of units containing no alkyl thiophene moieties in the conjugated polymer can vary to make the conjugated polymer suitable for use as an electron-donating organic semiconductor material in a small-area or large-area organic solar cell. Therefore, the use of the conjugated polymer ensures high energy conversion efficiency of the organic solar cell.

Abstract: Provided is a chalcogenide thin film solar cell having a transparent back electrode, including a transparent substrate, a photoactive layer including an S, Se-based chalcogenide material, and a back electrode disposed between the transparent substrate and the photoactive layer and including a transparent conductive oxide containing titanium (Ti).

Abstract: According to an aspect of the present invention, there is provided a method of manufacturing a compound thin film, which includes configuring an electrodeposition circuit by connecting an electrolytic solution, which is manufactured by mixing a predetermined precursor with a solvent, and an electrochemical cell, which includes a working electrode in a form of an electrode at which a specific pattern is patterned on a predetermined substrate, to a voltage application device or a current application device, and applying a reduction voltage or current to the working electrode using the voltage application device or the current application device, and selectively electrodepositing a thin film in some region of the electrode along a shape of the electrode at which the specific pattern is patterned.

Abstract: Disclosed is a conjugated polymer for an organic solar cell. The proportion of units containing no alkyl thiophene moieties in the conjugated polymer can vary to make the conjugated polymer suitable for use as an electron-donating organic semiconductor material in a small-area or large-area organic solar cell. Therefore, the use of the conjugated polymer ensures high energy conversion efficiency of the organic solar cell.

Abstract: Provided are a thin-film solar cell module structure and a method of manufacturing the same.

Abstract: A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.

Abstract: A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.

Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’).

Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve crystallinity and electric characteristics of an upper transparent electrode layer (6) by controlling a structure of a lower transparent electrode layer (5?) in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell according to the present disclosure, the front transparent electrode layer comprises a lower transparent electrode layer (5?) and an upper transparent electrode layer (6), and the lower transparent electrode layer (5?) comprises an amorphous oxide-based thin film.

Abstract: Provided is a Se- or S-based thin film solar cell, including a substrate, a rear electrode formed on the substrate, a light absorbing layer formed on the rear electrode and containing at least one of selenium (Se) and sulfur (S), and an rear electrode top layer. The rear electrode top layer is formed between the rear electrode and the light absorbing layer, and contains a large amount of oxygen (O) to control diffusion of sodium (Na) through the rear electrode to the light absorbing layer. In this manner, it is possible to improve the electrical conductivity and interfacial adhesion of the rear electrode while stimulating diffusion of sodium (Na) to improve the efficiency of a thin film solar cell.

Abstract: In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.

Abstract: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.

Abstract: A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.

Abstract: A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.

Abstract: A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).

Abstract: The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the

Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.