Patents by Inventor Jeung-hyun Jeong

Jeung-hyun Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7940637
    Abstract: A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: May 10, 2011
    Assignee: Korea Institute of Science and Technology
    Inventors: Wook Yeon Hwang, Jooho Kim, Jung-Hyeon Kim, Taek Sung Lee, Byung Ki Cheong, Hyun Seok Lee, Suyoun Lee, Won Mok Kim, Jeung-hyun Jeong
  • Patent number: 7906195
    Abstract: A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: March 15, 2011
    Assignee: Korea Institute of Science and Technology
    Inventors: Byung-Ki Cheong, Taek Sung Lee, Hyun Seok Lee, Jeung-Hyun Jeong, Suyoun Lee, Won Mok Kim
  • Patent number: 7851778
    Abstract: The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: December 14, 2010
    Assignees: Korea Institute of Science and Technology, Seoul National University Industry Foundation
    Inventors: Dae-Hwan Kang, In-Ho Kim, Byung Ki Cheong, Jeung-Hyun Jeong, Taek Sung Lee, Won Mok Kim, Ki-Bum Kim
  • Patent number: 7851828
    Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: December 14, 2010
    Assignees: Korea Institute of Science and Technology, Seoul National University Industry Foundation
    Inventors: Byung-ki Cheong, Jeung-hyun Jeong, Dae-Hwan Kang, Taek Sung Lee, In Ho Kim, Kyeong Seok Lee, Won Mok Kim, Dong-Ho Ahn, Ki-Bum Kim
  • Publication number: 20100065892
    Abstract: A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.
    Type: Application
    Filed: October 23, 2008
    Publication date: March 18, 2010
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Gyuweon Hwang, Wook Seong Lee, Jeung-hyun Jeong, Jong-Keuk Park, Young Joon Baik
  • Patent number: 7679954
    Abstract: A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.
    Type: Grant
    Filed: December 29, 2008
    Date of Patent: March 16, 2010
    Assignee: Korea Institute of Science and Technology
    Inventors: Suyoun Lee, Byung-ki Cheong, Jeung-hyun Jeong, Taek Sung Lee, Won Mok Kim
  • Publication number: 20090324824
    Abstract: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.
    Type: Application
    Filed: April 2, 2009
    Publication date: December 31, 2009
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Young Joon BAIK, Won Mok KIM, Kyeong Seok LEE, Jong-Keuk PARK, Jeung-hyun JEONG, Suyoun LEE, Taek Sung LEE
  • Patent number: 7632456
    Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: December 15, 2009
    Assignee: Korea Institute of Science and Technology
    Inventors: Byung-ki Cheong, Jeung-hyun Jeong, Dae-Hwan Kang, Han Ju Jung, Taek Sung Lee, In Ho Kim, Won Mok Kim, Kyeong Seok Lee
  • Publication number: 20090245079
    Abstract: A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.
    Type: Application
    Filed: October 29, 2008
    Publication date: October 1, 2009
    Applicants: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wook Yeon Hwang, Jooho Kim, Jung-Hyeon Kim, Taek Sung Lee, Byung Ki Cheong, Hyun Seok Lee, Suyoun Lee, Won Mok Kim, Jeung-hyun Jeong
  • Publication number: 20090168504
    Abstract: A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.
    Type: Application
    Filed: December 29, 2008
    Publication date: July 2, 2009
    Applicant: Korea Institute of Science And Technology
    Inventors: Suyoun Lee, Byung-ki Cheong, Jeung-hyun Jeong, Taek Sung Lee, Won Mok Kim
  • Publication number: 20090127102
    Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.
    Type: Application
    Filed: December 10, 2007
    Publication date: May 21, 2009
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong LEE, Young Joon BaiK, Jong-Keuk Park, Gyu Weon Hwang, Jeung-hyun Jeong
  • Patent number: 7507987
    Abstract: A method for making packets of nanostructures is presented. The method includes etching trenches in a silicon substrate. Nanostructures are grown in the trenches. The trenches are then filled with a filler material. Any filler and/or nanostructures material extending beyond the trench is removed. The silicon substrate is etched away, resulting in a nanopellet surrounding the nanostructures and wherein each nanostructures has a generally uniform length and direction. Nanostructures can comprise nanotubes, nanowires and nanofibers. The method eases the manipulation of nanostructures while providing geometrical uniformity.
    Type: Grant
    Filed: October 9, 2003
    Date of Patent: March 24, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Sang-Gook Kim, Tarek A. El Aguizy, Jeung-hyun Jeong, Yongbae Jeon
  • Publication number: 20080280135
    Abstract: Disclosed are DC plasma assisted chemical vapor deposition (DC PA-CVD) apparatus operable in the absence of a positive column, a method for depositing a material by DC PA-CVD in the absence of a positive column, and a diamond thin film fabricated thereby. In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.
    Type: Application
    Filed: August 3, 2007
    Publication date: November 13, 2008
    Inventors: Wook-Seong Lee, Young-Joon Baik, Jeung-Hyun Jeong, Ki-Woong Chae
  • Publication number: 20080131688
    Abstract: A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).
    Type: Application
    Filed: December 4, 2007
    Publication date: June 5, 2008
    Applicant: Korea Institute of Science and Technology
    Inventors: Byung-Ki Cheong, Taek Sung Lee, Hyun Seok Lee, Jeung-Hyun Jeong, Suyoun Lee, Won Mok Kim
  • Publication number: 20070272987
    Abstract: The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with t
    Type: Application
    Filed: May 24, 2007
    Publication date: November 29, 2007
    Applicants: Korea Institute of Science & Tech., Seoul National University Industry Foundation
    Inventors: Dae-Hwan Kang, In-Ho Kim, Byung Ki Cheong, Jeung-Hyun Jeong, Taek Sung Lee, Won Mok Kim, Ki-Bum Kim
  • Patent number: 7233054
    Abstract: The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: June 19, 2007
    Assignees: Korea Institute of Science and Technology, Seoul National University Industry Foundation
    Inventors: Dong Ho Anh, Tae-Yon Lee, Ki Bum Kim, Byung-ki Cheong, Dae-Hwan Kang, Jeung-hyun Jeong, In Ho Kim, Taek Sung Lee, Won Mok Kim
  • Publication number: 20070120104
    Abstract: The present invention provides a phase change memory cell comprising (GeASbBTeC)1?x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
    Type: Application
    Filed: November 29, 2005
    Publication date: May 31, 2007
    Inventors: Dong Ho Ahn, Tae-Yon Lee, Ki Bum Kim, Byung-ki Cheong, Dae-Hwan Kang, Jeung-hyun Jeong, In Ho Kim, Taek Sung Lee, Won Mok Kim
  • Publication number: 20070001160
    Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
    Type: Application
    Filed: April 25, 2006
    Publication date: January 4, 2007
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Byung-ki Cheong, Jeung-hyun Jeong, Dae-Hwan Kang, Han Ju Jung, Taek Sung Lee, In Ho Kim, Won Mok Kim, Kyeong Seok Lee
  • Publication number: 20060113573
    Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
    Type: Application
    Filed: November 29, 2005
    Publication date: June 1, 2006
    Inventors: Byung-ki Cheong, Jeung-hyun Jeong, Dao-Hwan Kang, Taek Sung Lee, In Ho Kim, Kyeong Seok Lee, Won Mok Kim, Dong-Ho Ahn, Ki-Burn Kim
  • Publication number: 20040137730
    Abstract: A method for making packets of nanostructures is presented. The method includes etching trenches in a silicon substrate. Nanostructures are grown in the trenches. The trenches are then filled with a filler material. Any filler and/or nanostructures material extending beyond the trench is removed. The silicon substrate is etched away, resulting in a nanopellet surrounding the nanostructures and wherein each nanostructures has a generally uniform length and direction. Nanostructures can comprise nanotubes, nanowires and nanofibers. The method eases the manipulation of nanostructures while providing geometrical uniformity.
    Type: Application
    Filed: October 9, 2003
    Publication date: July 15, 2004
    Inventors: Sang-Gook Kim, Tarek A. El Aguizy, Jeung-Hyun Jeong, Yongbae Jeon