Patents by Inventor Ji Ae Park

Ji Ae Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10870629
    Abstract: The present invention relates to an 18F-labelled compound, and a use thereof. The compound selectively binds to a prostate-specific membrane antigen (PSMA), and enables the acquisition of clear prostate cancer images in a short time when used in positron emission tomography (PET).
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: December 22, 2020
    Assignee: FUTURECHEM CO., LTD.
    Inventors: Dae Yoon Chi, Byoung Se Lee, So Young Chu, Woon Jung Jung, Hyeon Jin Jeong, Min Hwan Kim, Mi Hyun Kim, Kyo Chul Lee, Yong Jin Lee, Ji Ae Park, Ran Ji Yoo, Sang Moo Lim
  • Publication number: 20200207724
    Abstract: The present invention relates to an 18F-labelled compound, and a use thereof. The compound selectively binds to a prostate-specific membrane antigen (PSMA), and enables the acquisition of clear prostate cancer images in a short time when used in positron emission tomography (PET).
    Type: Application
    Filed: June 18, 2018
    Publication date: July 2, 2020
    Inventors: Dae Yoon CHI, Byoung Se LEE, So Young CHU, Woon Jung JUNG, Hyeon Jin JEONG, Min Hwan KIM, Mi Hyun KIM, Kyo Chul LEE, Yong Jin LEE, Ji Ae PARK, Ran Ji YOO, Sang Moo LIM
  • Patent number: 10245292
    Abstract: The present disclosure relates to a use of a dandelion extract and a Rooibos extract. The present disclosure also relates to a food composition and a pharmaceutical composition for preventing and improving climacteric, including a dandelion extract, or a dandelion and Rooibos composite extract as an active ingredient.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: April 2, 2019
    Assignee: FAMENITY CO., LTD
    Inventors: Do Hee Kim, Yoon Hwa Jeong, Ji Won Lee, Yoo Hun Noh, Ji Ae Park, Seng Ah Lee
  • Publication number: 20170121368
    Abstract: Provided are a novel compound, in which a bombesin derivative known as having selectivity with respect to prostate cancer bonds with a ligand via aminomethyl galacturonic acid, a complex compound that covalently bonds with a radioactive isotope via the ligand of the novel compound, methods of preparing the compounds, and a nuclear-based molecular imaging agent including the complex compound.
    Type: Application
    Filed: October 29, 2015
    Publication date: May 4, 2017
    Applicant: KOREA INSTITUTE OF RADIOLOGICAL & MEDICAL SCIENCES
    Inventors: Yong Jin Lee, Joo Hyun Kang, Kwang Il Kim, Min Hwan Kim, Byung Il Kim, Ji Ae Park, Sang Keun Woo, Kyo Chul Lee, Tae Sup Lee
  • Patent number: 9395455
    Abstract: Provided is a polyhedral-shaped radiation counter which measures a radiation level of a radioactive material, in which sensor modules configured to measure the radiation level are disposed at vertexes of a polyhedral shape, respectively, and the sensor modules are connected to each other by rod-shaped frame members disposed in edge positions of the polyhedral shape and face parts of the polyhedral shape form an open space.
    Type: Grant
    Filed: June 2, 2015
    Date of Patent: July 19, 2016
    Inventors: Jong Guk Kim, Sang June Jeon, Kyo Chul Lee, Eun Ju Kim, Ji Ae Park, Jung Young Kim, Kyeong Min Kim, Sang Moo Lim
  • Publication number: 20160003952
    Abstract: Provided is a polyhedral-shaped radiation counter which measures a radiation level of a radioactive material, in which sensor modules configured to measure the radiation level are disposed at vertexes of a polyhedral shape, respectively, and the sensor modules are connected to each other by rod-shaped frame members disposed in edge positions of the polyhedral shape and face parts of the polyhedral shape form an open space.
    Type: Application
    Filed: June 2, 2015
    Publication date: January 7, 2016
    Applicant: KOREA INSTITUTE OF RADIOLOGICAL & MEDICAL SCIENCES
    Inventors: Jong Guk Kim, Sang June Jeon, Kyo Chul Lee, Eun Ju Kim, Ji Ae Park, Jung Young Kim, Kyeong Min Kim, Sang Moo Lim
  • Publication number: 20150335694
    Abstract: The present disclosure relates to a use of a dandelion extract and a Rooibos extract. The present disclosure also relates to a food composition and a pharmaceutical composition for preventing and improving climacteric, including a dandelion extract, or a dandelion and Rooibos composite extract as an active ingredient.
    Type: Application
    Filed: August 6, 2015
    Publication date: November 26, 2015
    Inventors: Do Hee KIM, Yoon Hwa JEONG, Ji Won LEE, Yoo Hun NOH, Ji Ae PARK, Seng Ah LEE
  • Publication number: 20140349004
    Abstract: The present invention relates to DTPA derivatives capable of forming complexes by combining with metals and the like, metal complexes formed by combining with the DTPA derivatives, MR and CT contrast agents including gold (Au) nano-particles of which surfaces are coated with the metal complexes, and a method for manufacturing the same. The MR and CT contrast agents according to the present invention have a high magnetic relaxation rate, thereby providing an excellent contrast enforcement effect and a long image acquisition time. Furthermore, the MR and CT contrast agents are not toxic to the human body, and are image contrast agents of dual molecules capable of being applied to both MR and CT.
    Type: Application
    Filed: June 11, 2014
    Publication date: November 27, 2014
    Inventors: Tae Jung KIM, Yong Min JANG, Ji Ae PARK
  • Patent number: 8563095
    Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: October 22, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Xinhai Han, Ryan Yamase, Ji Ae Park, Shamik Patel, Thomas Nowak, Zhengjiang “David” Cui, Mehul Naik, Heung Lak Park, Ran Ding, Bok Hoen Kim
  • Publication number: 20130195937
    Abstract: A method for preventing or treating a brain nervous disease includes administering to a subject in need thereof a therapeutically effective amount of a carbon nanotube, wherein the nervous disease is a brain disease or a traumatic central nervous system injury. The composition of the present invention enables patients to recover from physical damage to the brain, exhibits superior efficacy for inhibiting the onset of Parkinson's disease and strokes in animal models for Parkinson's disease and strokes, and the cytotoxic effects of beta amyloid in beta amyloid toxicity tests. Therefore, the composition of the present invention can be effectively used in the preparation of medicine for protecting cranial nerves, therapeutic agents for preventing or treating brain disease, or therapeutic agents for treating traumatic injuries to the central nervous system.
    Type: Application
    Filed: July 14, 2011
    Publication date: August 1, 2013
    Applicant: BRAINGUARD CO., LTD.
    Inventors: Yoonhwa Jeong, Hyun Jung Lee, Do Yeon Lee, Yoo Hun Noh, Do Hee Kim, Ok Hyeon Kim, Ji Ae Park, Jiwon Lee
  • Patent number: 8329575
    Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: December 11, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Ji Ae Park, Ryan Yamase, Shamik Patel, Thomas Nowak, Li-Qun Xia, Bok Hoen Kim, Ran Ding, Jim Baldino, Mehul Naik, Sesh Ramaswami
  • Patent number: 8298887
    Abstract: Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: October 30, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Xinhai Han, Nagarajan Rajagopalan, Ji Ae Park, Bencherki Mebarki, Heung Lak Park, Bok Hoen Kim
  • Patent number: 8283237
    Abstract: A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: October 9, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Ji Ae Park, Ryan Yamase, Shamik Patel, Thomas Nowak, Li-Qun Xia, Bok Hoen Kim, Ran Ding, Jim Baldino, Mehul Naik, Sesh Ramaswami
  • Publication number: 20120164827
    Abstract: A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Nagarajan RAJAGOPALAN, Ji Ae PARK, Ryan YAMASE, Shamik PATEL, Thomas NOWAK, Li-Qun XIA, Bok Hoen KIM, Ran DING, Jim BALDINO, Mehul NAIK, Sesh RAMASWAMI
  • Publication number: 20120164829
    Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 28, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Nagarajan Rajagopalan, Ji Ae Park, Ryan Yamase, Shamik Patel, Thomas Nowak, Li-Qun Xia, Bok Hoen Kim, Ran Ding, Jim Baldino, Mehul Naik, Sesh Ramaswami
  • Publication number: 20120128583
    Abstract: The present invention relates to DTPA derivatives capable of forming complexes by combining with metals and the like, metal complexes formed by combining with the DTPA derivatives, MR and CT contrast agents including gold (Au) nano-particles of which surfaces are coated with the metal complexes, and a method for manufacturing the same. The MR and CT contrast agents according to the present invention have a high magnetic relaxation rate, thereby providing an excellent contrast enforcement effect and a long image acquisition time. Furthermore, the MR and CT contrast agents are not toxic to the human body, and are image contrast agents of dual molecules capable of being applied to both MR and CT.
    Type: Application
    Filed: December 13, 2009
    Publication date: May 24, 2012
    Applicant: Kyungpook National University Industry Academic Cooperation Foundation
    Inventors: Tae Jung Kim, Yong Min Jang, Ji Ae Park
  • Patent number: 8076250
    Abstract: A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.
    Type: Grant
    Filed: October 6, 2010
    Date of Patent: December 13, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Xinhai Han, Ji Ae Park, Tsutomu Kiyohara, Sohyun Park, Bok Hoen Kim
  • Publication number: 20110223765
    Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
    Type: Application
    Filed: March 15, 2010
    Publication date: September 15, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Ryan YAMASE, Ji Ae PARK, Shamik PATEL, Thomas NOWAK, Zhengjiang "David" CUI, Mehul NAIK, Heung Lak PARK, Ran DING, Bok Hoen KIM
  • Publication number: 20110136327
    Abstract: Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
    Type: Application
    Filed: June 25, 2010
    Publication date: June 9, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Xinhai Han, Nagarajan Rajagopalan, Ji Ae Park, Bencherki Mebarki, Heung Lak Park, Bok Hoen Kim