Patents by Inventor Ji Ho Joo

Ji Ho Joo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10331325
    Abstract: A mobile device having a parallax scrolling function and a method for controlling the mobile device are provided. The method includes displaying a plurality of objects on a touch screen of the mobile device, detecting a touch for scrolling the plurality of objects on the touch screen, and sequentially scrolling the plurality of objects at different time intervals according to attributes of the plurality of objects.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: June 25, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Joon Won, Masato Watanabe, Jong-Sung Joo, Joong-Hun Kwon, Ji-Eun Yang, Chang-Mo Yang, Hui-Chul Yang, Jae-Myoung Lee, Chul-Ho Jang, Yun Jegal, In-Won Jong, Hyung-Joo Jin
  • Patent number: 8188512
    Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
    Type: Grant
    Filed: August 5, 2009
    Date of Patent: May 29, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sang Hoon Kim, Gyung Ock Kim, Dong Woo Suh, Ji Ho Joo
  • Publication number: 20100144124
    Abstract: Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.
    Type: Application
    Filed: August 5, 2009
    Publication date: June 10, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang Hoon KIM, Dong Woo Suh, Ji Ho Joo, Gyung Ock Kim, Hyun Tak Kim
  • Publication number: 20100133585
    Abstract: A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
    Type: Application
    Filed: August 5, 2009
    Publication date: June 3, 2010
    Applicant: ELECTRONICS AND TELECOMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang Hoon Kim, Gyung Ock Kim, Dong Woo Suh, Ji Ho Joo