Abstract: The disclosure provides a method of forming a package structure, and the method includes the following steps. A plurality of semiconductor components is bonded to a substrate. A grinding process is performed to thin the plurality of semiconductor components. The plurality of semiconductor components have a first total thickness variation (TTV) after performing the grinding process. A dielectric layer is formed on the substrate. A first chemical mechanical polishing (CMP) is performed to remove a first portion of the dielectric layer on top surfaces of the plurality of semiconductor components; and performing a second CMP process to remove a second portion of the dielectric layer between the plurality of semiconductor components and a portion of the plurality of semiconductor components. After performing the second CMP process, the plurality of semiconductor components has a second TTV less than the first TTV.

Abstract: The disclosure provides a method of forming a package structure, and the method includes: bonding a die to a wafer; performing a thinning process on the die, wherein the die has a first total thickness variation (TTV) after performing the thinning process; forming a dielectric layer on the wafer to cover sidewalls and a top surface the die; performing a first removal process to remove a first portion of the dielectric layer and expose the top surface of the die; and performing a second removal process to remove a second portion of the dielectric layer and a portion of the die, wherein after performing the second removal process, the die has a second TTV less than the first TTV.

Abstract: The disclosure provides a method of forming a package structure, and the method includes: bonding a die to a wafer; performing a thinning process on the die, wherein the die has a first total thickness variation (TTV) after performing the thinning process; forming a dielectric layer on the wafer to cover sidewalls and a top surface the die; performing a first removal process to remove a first portion of the dielectric layer and expose the top surface of the die; and performing a second removal process to remove a second portion of the dielectric layer and a portion of the die, wherein after performing the second removal process, the die has a second TTV less than the first TTV.

Abstract: Provided is a 3DIC structure includes a wafer, a die and a dielectric layer. The die is over and bonded to the wafer. The dielectric layer is over the wafer and aside the die, covering sidewalls of the die. A total thickness variation (TTV) of the die is less than 0.8 ?m.

Abstract: Provided is a 3DIC structure includes a wafer, a die and a dielectric layer. The die is over and bonded to the wafer. The dielectric layer is over the wafer and aside the die, covering sidewalls of the die. A total thickness variation (TTV) of the die is less than 0.8 ?m.