Patents by Inventor Jiamian Hu

Jiamian Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11112355
    Abstract: Acoustically mediated spintronic THz emitters in which sound waves, rather than direct laser pulses, give rise to a spin current in a magnetic material via magnetoelastic coupling are provided. The THz emitters include a metal layer that acts as a light-to-acoustic transducer. Also provided are THz time-domain spectrometers (THz-TDSs) that incorporate the THz emitters.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: September 7, 2021
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Jiamian Hu, Shihao Zhuang
  • Patent number: 11069390
    Abstract: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) cells that undergo perpendicular magnetization switching in the absence of an in-plane magnetic field and methods for their operation are provided. The SOT-MRAM cells use cobalt-iron-boron alloys, cobalt-iron alloys, metallic cobalt, and/or metallic iron as the ferromagnetic free layer in a magnetic tunnel junction. By designing the ferromagnetic layer with appropriate lateral dimensions and operating the SOT-MRAM cells with an appropriate charge current density, deterministic perpendicular magnetization switching is achieved without the need to apply an external in-plane bias collinear with the charge current.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: July 20, 2021
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Jiamian Hu, Minyi Dai
  • Publication number: 20210199571
    Abstract: Acoustically mediated spintronic THz emitters in which sound waves, rather than direct laser pulses, give rise to a spin current in a magnetic material via magnetoelastic coupling are provided. The THz emitters include a metal layer that acts as a light-to-acoustic transducer. Also provided are THz time-domain spectrometers (THz-TDSs) that incorporate the THz emitters.
    Type: Application
    Filed: December 26, 2019
    Publication date: July 1, 2021
    Inventors: Jiamian Hu, Shihao Zhuang
  • Publication number: 20210074344
    Abstract: Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) cells that undergo perpendicular magnetization switching in the absence of an in-plane magnetic field and methods for their operation are provided. The SOT-MRAM cells use cobalt-iron-boron alloys, cobalt-iron alloys, metallic cobalt, and/or metallic iron as the ferromagnetic free layer in a magnetic tunnel junction. By designing the ferromagnetic layer with appropriate lateral dimensions and operating the SOT-MRAM cells with an appropriate charge current density, deterministic perpendicular magnetization switching is achieved without the need to apply an external in-plane bias collinear with the charge current.
    Type: Application
    Filed: September 6, 2019
    Publication date: March 11, 2021
    Inventors: Jiamian Hu, Minyi Dai